1
Subject to change without notice.
www.cree.com/power
Datasheet: C3D10170H Rev. -
C3D10170H–Silicon Carbide Schottky Diode
Z-Rec RectifieR
Features
1700-Volt Schottky Rectier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Halogen-Free; RoHS Compliant
Benets
Replace Bipolar with Unipolar Rectiers
Essentially No Switching Losses
Higher Efciency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Package
TO-247-2
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 1700 V
VRSM Surge Peak Reverse Voltage 1700 V
VDC DC Blocking Voltage 1700 V
IFContinuous Forward Current 14.4 A TC<135˚C
IFRM Repetitive Peak Forward Surge Current 45
26 ATC=25˚C, tP=10 ms, Half Sine Wave, D=1
TC=110˚C, tP=10 ms, Half Sine Wave, D=1
IFSM
Non-Repetitive Peak Forward Surge
Current
55
41 ATC=25˚C, tP=10ms, Half Sine Wave, D=1
TC=110˚C, tP=10 ms, Half Sine Wave, D=1
Ptot Power Dissipation 231
100 WTC=25˚C
TC=110˚C
TcMaximum Case Temperature 135 ˚C
TJOperating Junction Range -55 to
+175 ˚C
Tstg Storage Temperature Range -55 to
+135 ˚C
TO-247 Mounting Torque 1
8.8 Nm
lbf-in M3 Screw
6-32 Screw
Part Number Package Marking
C3D10170H TO-247-2 C3D10170
VRRM = 1700 V
IF; TC<135˚C = 14.4 A
Qc = 96 nC
PIN 1
PIN 2 CASE
2C3D10170H Rev. -
0
2
4
6
8
10
12
14
16
18
20
0 1 2 3 4 5 6 7
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.7
3
2
3.5 VIF = 10 A TJ=25°C
IF = 10 A TJ=175°C
IRReverse Current 20
100
60
300 μA VR = 1700 V TJ=25°C
VR = 1700 V TJ=175°C
QCTotal Capacitive Charge 96 nC
VR = 1700 V, IF = 10 A
di/dt = 200 A/μs
TJ = 25°C
C Total Capacitance
827
78
41
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC Thermal Resistance from Junction to Case 0.65 °C/W
Typical Performance
Figure 1. Forward Characteristics
0
1
2
3
4
5
0 250 500 750 1000 1250 1500 1750 2000 2250
Figure 2. Reverse Characteristics
IF (A)
VF (V)
IR (μA)
VR (V)
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
3C3D10170H Rev. -
Typical Performance
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
Figure 3. Current Derating
0
100
200
300
400
500
600
700
800
900
0.1 1 10 100 1000 10000
Figure 4. Power Derating
Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Qrr (nC)
VR (V)
C (pF)
VR (V)
0
50
100
150
200
250
25 50 75 100 125 150 175
10% Duty
30% Duty
50% Duty
70% Duty
DC
4C3D10170H Rev. -
Typical Performance
Figure 7. Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Thermal Resistance (˚C/W)
T (sec)
55 C3D10170H Rev. -
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the
maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006.
Diode Model
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celcius
VfT = VT+If*RT
VT = 0.975+(TJ* -1.4*10-3)
RT = 0.053+(TJ* 1.1*10-3)
POS Inches Millimeters
Min Max Min Max
A 0.185 0.209 4.70 5.31
A1 0.087 0.102 2.21 2.59
b 0.040 0.055 1.02 1.40
b1 0.065 0.088 1.65 2.23
C 0.016 0.031 0.41 0.79
D 0.819 0.845 20.80 21.46
E 0.61 0.640 15.49 16.26
e 0.215 0.215 5.46 5.46
L 0.78 0.80 19.81 20.32
L1 0.164 0.176 4.17 4.47
øP0.140 0.144 3.56 3.66
Q 0.212 0.244 5.38 6.20
øR0.135 0.157 3.43 3.99
øS0.278 0.288 7.06 7.32
V 0.652 0.662 16.56 16.81
W 0.000 0.006 0.00 0.15
PIN 1
PIN 2 CASE
e
Package Dimensions
Package TO-247-2
Mouser Electronics
Authorized Distributor
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C3D10170H