MSA-0436 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet Description Features The MSA-0436 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. * Cascadable 50 Gain Block The MSA-series is fabricated using Avago's 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 36 micro-X Package * 3 dB Bandwidth: DC to 3.8 GHz * 12.5 dBm Typical P1 dB at 1.0 GHz * 8.5 dB Typical Gain at 1.0 GHz * Unconditionally Stable (k>1) * Cost Effective Ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 5.25 V 2 MSA-0436 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] 100 mA 650 mW +13 dBm 150C -65 to 150C Thermal Resistance[2,5]: jc = 140C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.1 mW/C for TC > 109C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. Electrical Specifications[1], TA = 25C Symbol Parameters and Test Conditions: Id = 50 mA, ZO = 50 GP Power Gain (|S 21| 2) f = 0.1 GHz GP Gain Flatness f = 0.1 to 2.5 GHz f3 dB 3 dB Bandwidth VSWR Units Min. Typ. Max. dB 7.5 8.5 9.5 dB 0.6 1.0 GHz 3.8 Input VSWR f = 0.1 to 2.5 GHz 1.4:1 Output VSWR f = 0.1 to 2.5 GHz 1.9:1 NF 50 Noise Figure f = 1.0 GHz dB 6.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 25.5 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/C 4.75 5.25 5.75 -8.0 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. Ordering Information Part Numbers No. of Devices Comments MSA-0436-BLKG 100 Bulk MSA-0436-TR1G 1000 7" Reel 3 MSA-0436 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 50 mA) S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .08 .08 .07 .07 .05 .05 .04 .09 .14 .22 .28 .34 .37 .42 S21 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang 175 172 171 166 169 175 -142 -145 -154 -175 170 156 140 120 8.5 8.5 8.5 8.5 8.4 8.3 8.1 7.8 7.3 6.6 5.8 4.8 3.9 3.0 2.67 2.68 2.67 2.66 2.64 2.61 2.55 2.46 2.33 2.14 1.94 1.74 1.57 1.41 175 170 161 151 142 136 109 87 71 50 32 15 -1 -16 -16.4 -16.3 -16.4 -16.2 -16.1 -16.0 -15.0 -14.2 -13.1 -12.5 -11.7 -11.3 -10.7 -10.4 .151 .153 .151 .155 .156 .159 .178 .196 .221 .238 .260 .271 .291 .302 1 2 3 6 8 10 13 15 18 14 9 4 -2 -8 .20 .20 .20 .21 .22 .24 .26 .28 .31 .33 .35 .34 .33 .32 -10 -16 -33 -45 -57 -68 -96 -123 -140 -160 -173 -179 -171 -160 Typical Performance, TA = 25C (unless otherwise noted) 80 12 9 TC = +125C TC = +25C 10 TC = -55C 60 8 6 G p (dB) Gain Flat to DC I d (mA) G p (dB) 8 40 7 6 4 20 0.1 0.3 0.5 1.0 3.0 4 0 6.0 1 2 3 FREQUENCY (GHz) 20 7 12 P1 dB 9 8 7 NF +25 60 70 7.5 6 +85 7.0 15 12 I d = 50 mA 6.5 9 NF (dB) GP 7 -25 50 Figure 3. Power Gain vs. Current. I d = 70 mA 10 6 40 18 11 8 30 I d (mA) 21 P1 dB (dBm) P1 dB (dBm) 6 Figure 2. Device Current vs. Voltage. 13 G p (dB) 5 Vd (V) Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 50 mA. 5 -55 4 NF (dB) 0 0.1 GHz 1.0 GHz 2.0 GHz 5 2 5 +125 6 3 0.1 6.0 I d = 30 mA I d = 30 mA I d = 50 mA I d = 70 mA 5.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 TEMPERATURE, (C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 50 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 GATE 1 SOURCE 1.45 0.25 (0.057 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 0.05 (0.006 0.002) 4.57 0.25 0.180 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2740EN AV02-0303EN - April 12, 2007