Rev.2.00 Aug 07, 2006 page 1 of 6
FS10AS-3
High-Speed Switching Use
Nch Power MOS FET REJ03G1407-0200
(Previous: MEJ02G0111-0101)
Rev.2.00
Aug 07, 2006
Features
• Drive voltage : 10 V
• VDSS : 150 V
• rDS(ON) (max) : 170 mΩ
• ID : 10 A
• Integrated Fast Reco very Di o de (TY P. ) : 100 ns
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name:
MP-3A)
1. Gate
2. Drain
3. Source
4. Drain
1
1
3
3
2, 4
2
4
Applications
Motor control, Lamp contro l, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter Symbol Ratings Unit Conditions
Drain-source voltage VDSS 150 V VGS = 0 V
Gate-source voltage VGSS ±20 V VDS = 0 V
Drain current ID 10 A
Drain current (Pulsed) IDM 40 A
Avalanche drain current (Pulsed) IDA 10 A L = 100 µH
Source current IS 10 A
Source current (Pulsed) ISM 40 A
Maximum power dissipation PD 35 W
Channel temperature T c h – 55 to +150 °C
Storage temperature Tstg – 55 to +150 °C
Mass — 0.32 g Typical value
FS10AS-3
Rev.2.00 Aug 07, 2006 page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter Symbol Min Typ Max Unit Test Conditions
Drain-source breakdown voltage V(BR)DSS 150 — — V ID = 1 mA, VGS = 0 V
Gate-source leakage current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 V
Drain-source leakage current IDSS — — 0.1 mA VDS = 150 V, VGS = 0 V
Gate-source threshold voltage VGS(th) 2.0 3.0 4.0 V ID = 1 mA, VDS = 10 V
Drain-source on-state resistance rDS(ON) — 122 170 mΩ I
D = 5 A, VGS = 10 V
Drain-source on-state voltage VDS(ON) — 0.61 0.85 V ID = 5 A, VGS = 10 V
Forward transfer admittance | yfs | — 12 — S ID = 5 A, VDS = 10 V
Input capacitance Ciss — 1250 — pF
Output capacitance Coss — 175 — pF
Reverse transfer capacitance Crss — 75 — pF
VDS = 10 V, VGS = 0 V,
f = 1MHz
Turn-on delay time td(on) — 25 — ns
Rise time tr — 30 — ns
Turn-off delay time td(off) — 60 — ns
Fall time tf — 34 — ns
VDD = 80 V, ID = 5 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
Source-drain voltage VSD — 1.0 1.5 V IS = 5 A, VGS = 0 V
Thermal resistance Rth(ch-c) — — 3.57 °C/W Channel to case
Reverse recovery time trr — 100 — ns IS = 10 A, dis/dt = –100 A/µs
FS10AS-3
Rev.2.00 Aug 07, 2006 page 3 of 6
Performance Curves
Power Dissipation Derating Curve
Case Temperature Tc (°C)
Power Dissipation PD (W)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Output Characteristics (Typical)
Drain Current ID (A)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain Current ID (A)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage VGS (V)
Drain-Source On-State Voltage VDS(ON) (V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
Drain-Source On-State Resistance rDS(ON) (mΩ)
0
10
20
30
40
50
0 20050 100 150
0
2
4
6
8
10
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 20V 10V 6V7V
5V
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1.0
V
GS
= 20V 10V 6V
5V
7V
10
0
10
1
2
3
5
7
10
2
2
3
5
7
2
3
3
210
1
357 2 10
2
357 2 2
10
3
357
5
7
tw = 10µs
100
µs
DC
0
40
80
120
160
200
10
0
357 2 10
1
357 2 10
2
357 23
V
GS
= 10V
20V
0
0.4
0.8
1.2
1.6
2.0
0 4 8 12 16 20
5A
I
D
= 15A
10A
Tc = 25°C
Single Pulse
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
FS10AS-3
Rev.2.00 Aug 07, 2006 page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Forward Transfer Admittance | yfs | (S)
Switching Characteristics (Typical)
Drain-Source Voltage V
DS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current I
D
(A)
Capacitance C (pF)
Switching Time (ns)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Gate-Source Voltage V
GS
(V)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage V
SD
(V)
Source Current I
S
(A)
0
4
8
12
16
20
048121620
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357 32
Ciss
Coss
Crss
10
0
10
1
23457 10
2
23457
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
t
d(off)
t
d(on)
t
f
t
r
10
0
10
1
23457 10
2
23457
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
Tc = 25°C
75°C
125°C
0
4
8
12
16
20
0 1020304050
V
DS
= 50V
80V
100V
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6 2.0
Tc = 125°C
75°C
25°C
VDS = 10V
Pulse Test
Tch = 25°C
VDD = 80V
VGS = 10V
RGEN = RGS = 50Ω
Tc = 25°C
VDS = 10V
Pulse Test
Tch = 25°C
f = 1MHz
VGS = 0V
Tch = 25°C
ID = 10A
VGS = 0V
Pulse Test
FS10AS-3
Rev.2.00 Aug 07, 2006 page 5 of 6
Channel Temperature Tch (°C)
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage V
GS(th)
(V)
On-State Resistance vs.
Channel Temperature (Typical)
Drain-Source On-State Resistance r
DS(ON)
(25°C)
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Pulse Width tw (s)
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Switching Time Measurement Circuit Switching Waveform
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
R
L
VDD
Vout
Monitor
RGEN
RGS
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150 0
1.0
2.0
3.0
4.0
5.0
–50 0 50 100 150
VGS = 10V
ID = 5A
Pulse Test
VGS = 0V
ID = 1mA
VDS = 10V
ID = 1mA
FS10AS-3
Rev.2.00 Aug 07, 2006 page 6 of 6
Package Dimensions
SC-63 0.32g
MASS[Typ.]
PRSS0004ZA-A
RENESAS CodeJEITA Package Code Previous Code Unit: mm
10.4Max
1Max
0.5 ± 0.2
0.1 ± 0.1
0.5 ± 0.2
0.760.76 ± 0.2
2.3 ± 0.2
5.3 ± 0.2
6.6
1.4 ± 0.2
6.1 ± 0.2 1 ± 0.2
2.3
2.5Min
2.3
1
Package Name
MP-3A
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) + 3 FS10AS-3-T13
Surface-mounted type Plastic Magazine
(Tube) 75 Type name FS10AS-3
Note: Please confirm the specification about the shipping in detail.
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