Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 3/99A
GaAs IC SPST Switch
Reflective DC–18 GHz
Features
■Broadband DC–18 GHz
■Low Loss, High Isolation, Reflective, Shor t
■100% On-Wafer RF and DC Testing
■100% Visual Inspection to MIL-STD-883
MT 2010
AS018R1-00
Description
The AS018R1-00 GaAs SPST MMIC FET s witch chip is
ideal for applications requiring low loss, high isolation
and/or broadband operation.The GaAs MMIC employs
one series and three shunt FETs for low loss, high
isolation switching. Each chip is measured on a 100%
basis at 2, 10 and 18 GHz f or insertion loss, isolation, input
and output return losses and gate leakage. Power
consumption is very low, typically 75 µA at -5 V. While
recommended for operation up to 18 GHz, the switch
performs well through 26 GHz.
2 GHz 10 GHz 18 GHz 2, 10 and 18 GHz
Parameter1Typ. Typ. Typ. Min. Max. Unit
Inser tion Loss20.6 1.7 1.5 2.0 dB
Isolation 59 57 47 40 dB
Input Return Loss 17 7 9.5 6 dB
Output Return Loss 18 9 13 6 dB
Electrical Specifications at 25°C
Chip Outline
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
1.All measurements made in a 50 Ωsystem, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 3 ns
On, Off (50% CTL to 90/10% RF) 6 ns
Video Feedthru320 mV
Input Power for 1 dB Compression 0/-5 V 0.5–18 GHz 24 dBm
0.001 GHz 16 dBm
Intermodulation Intercept Point (IP3) For Two-tone Input Power 13 dBm 0.5–18 GHz 46 dBm
0.001 GHz 35 dBm
Control Voltages VLow = 0 to -0.2 V @ 20 µA Max.
VHigh = -3 V to -6 V @ 250 µA Max.
Operating Characteristics at 25°C