SPF5122Z SPF5122Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. 25.0 GaAs MESFET 22.0 3.50 19.0 3.00 16.0 2.50 13.0 2.00 10.0 1.50 7.0 1.00 SiGe BiCMOS Gain (dB) Si BiCMOS SiGe HBT GaAs pHEMT 4.00 GaN HEMT 4.0 InP HBT 1.0 Gain Si CMOS Si BJT GaAs HBT InGaP HBT Gain and NF versus Frequency Broadband Application Circuit (5V, 90mA) NF (dB) Optimum Technology Matching(R) Applied 0.50 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) LDMOS Parameter Small Signal Power Gain Min. Specification Typ. Max. Gain=18.9dB at 900MHz High Linearity: OIP3=40.5dBm at 1900MHz Channel Power=13.4dBm (65dBc IS95 ACPR, 880MHz) P1dB =23.4dBm at 1900MHz Single-Supply Operation: 5V at IDQ =90mA Flexible Biasing Options: 3-5V, Adjustable Current Broadband Internal Matching Applications NF RF MEMS Ultra-Low Noise Figure=0.60dB at 900MHz Cellular, PCS, W-CDMA, ISM, WiMAX Receivers PA Driver Amplifier Low Noise, High Linearity Gain Block Applications Unit Condition 17.2 11.2 20.8 21.4 35.1 37.2 18.9 20.2 dB 0.9GHz 12.2 14.4 dB 1.96GHz Output Power at 1dB Compression 22.8 dBm 0.9GHz 23.4 dBm 1.9GHz Output Third Order Intercept Point 38.1 dBm 0.9GHz 40.5 dBm 1.9GHz Noise Figure 0.59 0.85 dB 0.9GHz 0.65 0.9 dB 1.9GHz Input Return Loss 10 14.3 dB 0.9 GHz 21 dB 1.9GHz Output Return Loss 14 17 dB 0.9GHz 13 dB 1.9GHz Reverse Isolation 24.1 dB 0.9GHz 18.4 dB 1.9GHz Device Operating Voltage 5.00 5.25 V Device Operating Current 75 90 105 mA Quiescent Thermal Resistance 65 C/W Junction to lead Test Conditions: VD =5V, IDQ =90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS =ZL =50, 25C, Broadband Application Circuit RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS110408 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 SPF5122Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD) 120 Max Device Voltage (VD) 5.5 V Max RF Input Power 27 dBm 660 mW Max Dissipated Power Max Junction Temperature (TJ) mA 150 C Operating Temperature Range (TL) -40 to + 85 C Max Storage Temperature -65 to +150 C ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity Level (MSL) MSL 1 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Typical RF Performance - Broadband Application Circuit with VD =5V, ID =90mA Parameter Unit 0.1 GHz* 0.4 GHz 0.9 GHz 1.5 GHz 1.9 GHz 2.2 GHz 2.5 GHz 3.5 GHz Small Signal Gain dB 27.0 24.0 19.0 15.0 13.0 12.0 11.0 6.0 Noise Figure dB 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35 Output IP3 dBm 33.0 36.0 38.0 39.5 40.5 41.0 41.5 40.5 Output P1dB dBm 22.3 22.7 23.0 23.2 23.4 23.7 23.9 22.2 Input Return Loss dB -9.5 -10.0 -14.5 -20.0 -21.0 -22.0 -22.5 -15.0 Output Return Loss dB -29.0 -19.5 -17.0 -14.0 -13.0 -12.5 -12.5 -7.5 Reverse Isolation dB -32.0 -29.0 -24.0 -20.0 -18.5 -17.5 -16.5 -15.5 Test Conditions: VD =5V, IDQ =90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL =25C, ZS =ZL =50 *Bias Tee Data @ 100MHz 3.8 GHz 7.0 1.27 41.5 22.9 -11.5 -15.5 -13.5 1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input. Typical RF Performance - Broadband Application Circuit with VD =3V, ID =58mA Parameter Unit 0.1 GHz* 0.4 GHz 0.9 GHz 1.5 GHz 1.9 GHz 2.2 GHz 2.5 GHz 3.5 GHz Small Signal Gain dB 26.0 23.0 18.5 14.5 12.5 11.5 10.5 6.0 Noise Figure dB 0.35 0.44 0.58 0.65 0.61 0.69 0.79 1.25 Output IP3 dBm 31.5 33.0 34.5 36.0 36.5 37.0 37.5 37.0 Output P1dB dBm 18.8 18.9 19.1 19.4 19.9 20.2 20.1 18.9 Input Return Loss dB -8.0 -9.0 -13.0 -16.5 -18.5 -19.0 -19.0 -13.5 Output Return Loss dB -26.0 -28.5 -23.5 -18.0 -16.5 -16.0 -15.5 -9.0 Reverse Isolation dB -31.0 -28.0 -23.0 -19.0 -17.5 -16.0 -15.0 -14.5 Test Conditions: VD =3V, IDQ =58mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL =25C, ZS =ZL =50, *Bias Tee Data @ 100MHz 3.8 GHz 6.5 1.19 37.5 19.2 -10.0 -14.0 -12.5 1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input. 2 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110408 SPF5122Z Typical RF Performance - Broadband Application Circuit with VD =5V, ID =90mA NF versus Frequency 3.0 OIP3 versus Frequency (0 dBm/tone, 1 MHz spacing) 46.0 2.5 42.0 OIP3 (dBm) NF (dB) 2.0 1.5 38.0 34.0 1.0 25C -40C 85C 30.0 25C 0.5 85C 0.0 26.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 Frequency (GHz) 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Device Current versus Voltage P1dB versus Frequency 27.0 140.0 120.0 25.0 23.0 ID (mA) P1dB (dBm) 100.0 21.0 80.0 60.0 40.0 19.0 25C -40C 85C 25C -40C 85C 20.0 17.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) DS110408 3.0 3.5 4.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VD (V) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 12 SPF5122Z Typical RF Performance - Broadband Application Circuit with VD =5V, ID =90mA S11 versus Frequency S21 versus Frequency 0.0 32.0 25C -40C 85C -5.0 25C -40C 85C 28.0 24.0 S21 (dB) S11 (dB) -10.0 -15.0 -20.0 20.0 16.0 12.0 8.0 -25.0 4.0 -30.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 Frequency (GHz) 2.0 2.5 3.0 3.5 4.0 S22 versus Frequency 0.0 0.0 -5.0 -5.0 -10.0 -10.0 S22 (dB) S12 (dB) S12 versus Frequency -15.0 -20.0 -15.0 -20.0 25C -40C 85C -25.0 -30.0 25C -40C 85C -25.0 -30.0 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) 4 of 12 1.5 Frequency (GHz) 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110408 SPF5122Z Typical RF Performance - Broadband Application Circuit with VD =5V, ID =90mA OIP3 versus Power (900 MHz, 1 MHz spacing) 46.0 42.0 42.0 38.0 38.0 OIP3 (dBm) OIP3 (dBm) 46.0 OIP3 versus Power (1900 MHz, 1 MHz spacing) 34.0 30.0 34.0 25C -40C 85C 30.0 -40C 25C 85C 26.0 26.0 0.0 3.0 6.0 9.0 12.0 15.0 0.0 3.0 Output Power per Tone (dBm) ACP versus Channel Power @ 880MHz -30.0 -40.0 9.0 12.0 15.0 ACP versus Channel Power @ 2140MHz -30.0 25C -40C 85C 880MHz IS95 Source IS-95 with 9 DPCH 6.0 Output Power per Tone (dBm) WCDMA with 64 DPCH -40.0 -40C 25C 85C System ACP (dBc) ACP (dBc) -50.0 -60.0 -50.0 -60.0 -70.0 -70.0 -80.0 Source Source -90.0 -80.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Channel Power (dBm) DS110408 14.0 16.0 18.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 Channel Power (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 12 SPF5122Z Typical RF Performance - Broadband Application Circuit with VD =3V, ID =58mA NF versus Frequency OIP3 versus Frequency (0 dBm/tone, 1 MHz spacing) 42.0 3.0 2.5 38.0 OIP3 (dBm) NF (dB) 2.0 1.5 34.0 30.0 1.0 26.0 0.5 25C -40C 85C 25C 85C 22.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Frequency (GHz) P1dB versus Frequency 22.0 P1dB (dBm) 20.0 18.0 16.0 14.0 25C -40C 85C 12.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 6 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110408 SPF5122Z Typical RF Performance - Broadband Application Circuit with VD =3V, ID =58mA S11 versus Frequency S21 versus Frequency 0.0 32.0 25C -40C 85C 28.0 -5.0 24.0 S21 (dB) S11 (dB) -10.0 -15.0 -20.0 20.0 16.0 12.0 8.0 -25.0 25C -40C 85C -30.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 4.0 0.0 0.5 1.0 Frequency (GHz) 2.0 2.5 3.0 3.5 4.0 S22 versus Frequency 0.0 0.0 -5.0 -5.0 -10.0 -10.0 S22 (dB) S12 (dB) S12 versus Frequency -15.0 -20.0 -15.0 -20.0 25C -40C 85C -25.0 25C -40C 85C -25.0 -30.0 -30.0 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) 7 of 12 1.5 Frequency (GHz) 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110408 SPF5122Z De-embedded Device S-parameters (Bias Tee Data) GMAX versus Frequency (5V, 90mA) 30.0 Gmax GMAX, Gain (dB) 25.0 Gain 20.0 15.0 10.0 5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) S11 versus Frequency (5V 90mA) S22 versus Frequency (5V 90mA) 1.0 1.0 2.0 0.5 0.2 2.0 0.5 0.2 5.0 5.0 8 GHz 6 GHz 0.0 0.2 4 GHz 3 GHz 1.0 2.0 8 GHz 5.0 0.0 0.2 0.5 GHz 0.5 2 GHz 50 MHzz 6 GHz 5.0 2 GHz 1 GHz 3 GHz 0.5 GHz 4 GHz 50 MHzz 0.2 5.0 0.5 2.0 1.0 8 of 12 2.0 1 GHz 0.2 5.0 0.5 2.0 1.0 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110408 SPF5122Z De-embedded Device S-Parameters (Bias Tee Data) GMAX versus Frequency (3V, 58mA) 30.0 Gmax 25.0 Gain GMAX, Gain (dB) 20.0 15.0 10.0 5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) S11 versus Frequency (3V 58mA) S22 versus Frequency (3V 58mA) 1.0 1.0 2.0 0.5 0.2 2.0 0.5 0.2 5.0 5.0 8 GHz 6 GHz 4 GHz 0.0 0.2 3 GHz 8 GHz 1.0 2.0 5.0 0.0 0.2 0.5 0.5 GHz 2.0 5.0 1 GHz 2 GHz 6 GHz 2 GHz 4 GHz 1 GHz 50 MHz 0.5 GHz 0.2 5.0 0.5 2.0 1.0 DS110408 0.2 5.0 0.5 2.0 1.0 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 12 SPF5122Z Evaluation Board Assembly Drawing Evaluation Board Bill of Materials (BOM) (400MHz to 3000MHz) C1 AJB104KLRH, Rohm, 0.1uF C2 MCH185A101JK, Rohm, 100pF C3 MCH185A101JK, Rohm, 100pF C4 MCH185A101JK, Rohm, 100pF L1 LL1608-FSR15J, Toko, 150nH Application Schematic (400MHz to 3000MHz) Vs 0.1uF 100pF 150nH RF in RF out SPF5122Z 100pF 100pF Epad 10 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110408 SPF5122Z Pin Names and Description Pin 1 2 3 4 5 6 7 8 EPAD Function N/A RF IN N/A N/A N/A N/A RF OUT/BIAS N/A GND Description Ground or No-Connect. No Connection Internal RF Input, DC Coupled and Matched to 50. An External DC Block is Required. Ground or No-Connect. No Connection Internal Ground or No-Connect. No Connection Internal Ground or No-Connect. No Connection Internal Ground or No-Connect. No Connection Internal RF Output, Bias Applied Through This Pin. Matched to 50. Ground or No-Connect. No Connection Internal EPAD Must be Conductively Attached to RF and DC Ground. Part Identification Suggested Pad Layout (Dimensions in inches) Pin 1 Designation (top view) 8 1 2 3 SPF 51Z 7 0.0295 0.0057 0.0088 6 0.0337 4 5 O0.0120 012 O0.0200 Package Drawing Dimensions in millimeters Refer to drawing posted at www.rfmd.com for tolerances. DS110408 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 11 of 12 SPF5122Z Ordering Information Part Number SPF5122Z SPF5122ZSQ SPF5122ZSR SPF5122ZPCK1 12 of 12 Description 7" Reel with 3000 pieces Sample Bag with 25 pieces 7" Reel with 100 pieces 400MHz to 3000MHz PCBA with 5-piece Sample Bag 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110408