Parameter Symbol IRF7828PbF Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain or Source TA = 25°C ID13.6
Current (VGS ≥ 4.5V) TL = 70°C 11 A
Pulsed Drain CurrentIDM 100
Power Dissipation TA = 25°C PD2.5 W
TL = 70°C 1.6
Junction & Storage Temperature Range TJ, TSTG –55 to 150 °C
Continuous Source Current (Body Diode) IS 3.1 A
Pulsed Source CurrentISM 100
Absolute Maximum Ratings
Parameter Max. Units
Maximum Junction-to-AmbientRθJA 50 °C/W
Maximum Junction-to-Lead RθJL 20 °C/W
Thermal Resistance
PD-95214A
IRF7828PbF
04/05/07
IRF7828PbF
RDS(on) 9.5mΩ
QG 9.2nC
Qsw 3.7nC
Qoss 6.1nC
DEVICE CHARACTERISTICS
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
SO-8
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7828 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7828 offers particulary low RDS(on) and high Cdv/dt
immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
IRF7828PbF
2www.irf.com
Parameter Min Typ Max Units Conditions
Diode Forward VSD – – 1.0 V IS = 10A, VGS = 0V
Voltage*
Reverse Recovery Qrr – 13 – nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery Qrr(s) – 13 – nC di/dt = 700A/µs
Charge (with Parallel (with 10BQ040)
Schottky)VDS = 16V, VGS = 0V, IS = 15A
Source-Drain Rating & Characteristics
Charge
Notes: Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 10A.
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 – – V VGS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source RDS(on) – 9.5 12.5 mΩVGS = 4.5V, ID = 10A
on Resistance
Gate Threshold Voltage VGS(th) 1.0 – – V VDS = VGS,ID = 250µA
Drain-Source Leakage IDSS – – 1.0 VDS = 24V, VGS = 0
Current* – – 150 µA VDS = 24V, VGS = 0,
Tj = 125°C
Gate-Source Leakage IGSS – – ±100 nA VGS = ±20V
Current
Total Gate Chg Cont FET QG– 9.2 14 VGS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET QG– 7.3 – VGS = 5V, VDS< 100mV
Pre-Vth QGS1 – 2.5 – VDS = 15V, ID = 10A
Gate-Source Charge
Post-Vth QGS2 – 0.8 – nC
Gate-Source Charge
Gate to Drain Charge QGD – 2.9 –
Switch Chg(Qgs2 + Qgd) Q
sw – 3.7 –
Output Charge Qoss – 6.1 – VDS = 10V, VGS = 0
Gate Resistance RG– 2.3 – Ω
Turn-on Delay Time td (on) – 6.3 – VDD = 15V, ID = 10A
Rise Time tr– 2.7 – ns VGS = 4.5V
Turn-off Delay Time td (off) – 9.7 – Clamped Inductive Load
Fall Time tf– 7.3 –
Input Capacitance Ciss – 1010 –
Output Capacitance Coss – 360 – pF VDS = 15V, VGS = 0
Reverse Transfer Capacitance Crss – 110 –
Electrical Characteristics
Current
IRF7828PbF
www.irf.com 3
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
0 5 10 15 20
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 10A
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 14A
VGS = 10V
IRF7828PbF
4www.irf.com
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 6. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Transfer Characteristics
0.0 0.5 1.0 1.5
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
IRF7828PbF
www.irf.com 5
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information (Lead-Free)
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IRF7828PbF
6www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/07
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)