BT136-800E 4Q Triac 26 September 2018 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits * * * * * * Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications * * General purpose motor controls General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Conditions Min Typ Max Unit - - 800 V - - 4 A non-repetitive peak on- full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 25 A full sine wave; Tj(init) = 25 C; tp = 16.7 ms - - 27 A - - 125 C VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 - 2.5 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 - 4 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 - 5 10 mA full sine wave; Tmb 107 C; Fig. 1; Fig. 2; Fig. 3 junction temperature Static characteristics IGT gate trigger current BT136-800E WeEn Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 - 11 25 mA IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 2.2 15 mA VT on-state voltage IT = 5 A; Tj = 25 C; Fig. 10 - 1.4 1.7 V VDM = 536 V; Tj = 125 C; (VDM = 67% of VDRM); exponential waveform; gate open circuit - 50 - V/s Simplified outline Graphic symbol Dynamic characteristics dVD/dt rate of rise of off-state voltage 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb T2 sym051 T1 G 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number BT136-800E BT136-800E Product data sheet Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 BT136-800E WeEn Semiconductors 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 800 V full sine wave; Tmb 107 C; Fig. 1; Fig. 2; Fig. 3 - 4 A full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5 - 25 A full sine wave; Tj(init) = 25 C; tp = 16.7 ms - 27 A I t I t for fusing tp = 10 ms; SIN - 3.1 As dIT/dt rate of rise of on-state current IG = 20 mA - 50 A/s IG = 20 mA - 50 A/s IG = 20 mA - 50 A/s IG = 50 mA - 10 A/s IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 C Tj junction temperature - 125 C over any 20 ms period 003aae828 5 003aae830 12 IT(RMS) (A) 10 IT(RMS) (A) 4 8 3 6 2 4 1 0 - 50 2 0 50 100 Tmb (C) 0 10-2 150 Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values BT136-800E Product data sheet 10-1 1 10 surge duration (s) f = 50 Hz Tmb 107 C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 BT136-800E WeEn Semiconductors 4Q Triac 003aae827 8 Ptot (W) 6 4 conduction angle, (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 101 Tmb(max) (C) = 180 107 120 90 113 60 30 2 0 119 0 1 2 3 4 5 IT(RMS) (A) 125 = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aae831 30 ITSM (A) 25 20 15 t 5 0 ITSM IT 10 1/f Tj(init) = 25 C max 1 10 102 103 number of cycles 104 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 BT136-800E WeEn Semiconductors 4Q Triac 003aae829 103 ITSM IT t ITSM (A) tp Tj(init) = 25 C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 BT136-800E WeEn Semiconductors 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 6 - - 3.7 K/W full cycle; Fig. 6 - - 3 K/W thermal resistance from junction to ambient free air in free air - 60 - K/W Rth(j-a) 003aae836 10 Zth(j-mb) (K/W) unidirectional 1 bidirectional 10- 1 P tp 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 1 tp (s) t 10 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 BT136-800E WeEn Semiconductors 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 - 2.5 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 - 4 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 - 5 10 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 - 11 25 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 C; Fig. 8 - 3 15 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 C; Fig. 8 - 10 20 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 C; Fig. 8 - 2.5 15 mA VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 C; Fig. 8 - 4 20 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 2.2 15 mA VT on-state voltage IT = 5 A; Tj = 25 C; Fig. 10 - 1.4 1.7 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 C; Fig. 11 - 0.7 1 V VD = 400 V; IT = 0.1 A; Tj = 125 C; Fig. 11 0.25 0.4 - V VD = 800 V; Tj = 125 C - 0.1 0.5 mA VDM = 536 V; Tj = 125 C; (VDM = 67% of VDRM); exponential waveform; gate open circuit - 50 - V/s - 2 - s ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage tgt gate-controlled turn-on ITM = 6 A; VD = 800 V; IG = 0.1 A; dIG/ time dt = 5 A/s BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 BT136-800E WeEn Semiconductors 4Q Triac 003aae833 3 003aae835 3 IL IL(25C) IGT IGT(25 C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 1 (4) 0 -60 -10 40 90 Tj (C) 0 -60 140 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ -10 40 90 Tj (C) 140 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature 003aae837 2.0 003aae834 12 IH IH(25C) IT (A) 1.5 8 1.0 4 0.5 0 -60 (1) -10 40 90 Tj (C) 0 140 0 (2) (3) 1 2 VT (V) 3 Vo = 1.27 V Rs = 0.091 (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 BT136-800E WeEn Semiconductors 4Q Triac 003aae832 1.6 VGT VGT(25 C) 1.2 0.8 0.4 0 -60 -10 40 90 Tj (C) 140 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 BT136-800E WeEn Semiconductors 4Q Triac 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 12. Package outline TO-220AB (SOT78) BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 BT136-800E WeEn Semiconductors 4Q Triac Right to make changes -- WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. BT136-800E Suitability for use -- WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). WeEn does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors' standard warranty and WeEn Semiconductors' product specifications. All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 BT136-800E WeEn Semiconductors 4Q Triac Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 BT136-800E WeEn Semiconductors 4Q Triac 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Characteristics..............................................................7 10. Package outline........................................................ 10 11. Legal information..................................................... 11 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 26 September 2018 BT136-800E Product data sheet All information provided in this document is subject to legal disclaimers. 26 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13