2005-10-11
BFP520
1
NPN Silicon RF Transistor
• For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding Gms = 23.5 dB
Noise Figure F = 0.95 dB
• For oscillators up to 15 GHz
• Transition frequency fT = 45 GHz
• Gold metallisation for high reliability
• SIEGET 45 - Line
12
3
4
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
T
A
≤ 0 °C
VCEO
2.5
2.4
V
Collector-emitter voltage VCES 10
Collector-base voltage VCBO 10
Emitter-base voltage VEBO 1
Collector current IC40 mA
Base current IB4
Total power dissipation1)
TS ≤ 105 °C Ptot 100 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 450 K/W
1TS is measured on the collector lead at the soldering point to pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
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BFP520
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 2.5 3 3.5 V
Collector-emitter cutoff current
VCE = 10 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0 ICBO - - 200 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 35 µA
DC current gain
IC = 20 mA, VCE = 2 V, pulse measured hFE 70 110 170 -
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 2 V, f = 2 GHz fT32 45 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.06 0.13 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.3 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.35 -
Noise figure
IC = 2 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
F- 0.95 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gms - 23.5 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|2- 21 -
Third order intercept point at output
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 7 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
IP3
-
-
25
17
-
-
dBm
1dB Compression point
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
IC = 7 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
P-1dB
-
-
12
5
-
-
1Gms = |S21 / S12|
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SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS = 15 aA
VAF = 25 V
NE = 2-
VAR = 2V
NC = 2-
RBM = 7.5 Ω
CJE = 235 fF
TF = 1.7 ps
ITF = 0.7 A
VJC = 0.661 V
TR = 50 ns
MJS = 0.333 -
XTI = 0.35 -
NF = 1-
ISE = 25 fA
NR = 1-
ISC = 20 fA
IRB = -A
RC = 7.6 Ω
MJE = 0.335 -
VTF = 5V
CJC = 93 fF
XCJC = 1-
VJS = 0.75 V
EG = 1.11 eV
TNOM 298 K
BF = 235 -
IKF = 0.4 A
BR = 1.5 -
IKR = 0.01 A
RB = 11 Ω
RE = 0.6 -
VJE = 0.958 V
XTF = 10 -
PTF = 50 deg
MJC = 0.236 -
CJS = 0 fF
XTB = -0.25 -
FC = 0.5
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit: LBI = 0.47 nH
LBO = 0.53 nH
LEI = 0.23 nH
LEO = 0.05 nH
LCI = 0.56 nH
LCO = 0.58 nH
CBE = 136 fF
CCB =6.9 fF
C
C
E = 134 fF
Valid up to 6GHz
The SOT343 package has two emitter leads. To avoid high complexity to the package equivalent
circuit both leads are combined in one electrical connection
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
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BFP520
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mW
120
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
PtotMAX/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 0.5 1 1.5 2 V3
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
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Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
28
32
36
40
44
GHz
52
fT
2
1
0.75
0.5
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 2 V, IC = 20 mA
01234GHz 6
f
0
4
8
12
16
20
24
28
32
36
dB
44
G
Gms
Gma
|S21|²
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0 0.5 1 1.5 2 V3
VCE
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
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Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
Zs = 50Ohm
Zs = Zsopt
Noise figure F = ƒ(f)
VCE = 2 V, ZS = ZSopt
012345GHz 6.5
f
0
0.5
1
1.5
2
dB
3
F
IC = 5 mA
IC = 2 mA
Source impedance for min.
noise figure vs. frequency
VCE = 2 V, IC = 2 mA / 5 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
6GHz
0.45GHz
0.9GHz
1.8GHz
2mA
5mA
2005-10-11
BFP520
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Package SOT343
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Manufacturer
Date code (Year/Month)
Type code
2005, June
BGA420
Example
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
2±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
2005-10-11
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Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
