BFP520 NPN Silicon RF Transistor * For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB * For oscillators up to 15 GHz * Transition frequency f T = 45 GHz * Gold metallisation for high reliability * SIEGET 45 - Line ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520 Marking APs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 C 2.5 TA 0 C 2.4 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 40 Base current IB 4 Total power dissipation1) Ptot 100 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS 105 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS 450 K/W 1T S is measured on the collector lead at the soldering point to pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance 2005-10-11 1 BFP520 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 2.5 3 3.5 V I CES - - 10 A I CBO - - 200 nA I EBO - - 35 A h FE 70 110 170 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 2 V, pulse measured 2005-10-11 2 BFP520 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT Unit 32 45 - GHz Ccb - 0.06 0.13 Cce - 0.3 - Ceb - 0.35 - F - 0.95 - dB G ms - 23.5 - dB |S21| 2 - 21 - IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output dBm IP 3 VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt - 25 - - 17 - - 12 - - 5 - VCE = 2 V, I C = 7 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt 1dB Compression point P-1dB IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 7 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz 1G ms = |S21 / S12| 2005-10-11 3 BFP520 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 15 25 2 2 2 7.5 235 1.7 0.7 0.661 50 0.333 0.35 aA V V fF ps A V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 235 0.4 1.5 0.01 11 0.6 0.958 10 50 0.236 0 -0.25 0.5 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1 25 1 20 7.6 0.335 5 93 1 0.75 1.11 298 fA fA A V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.47 0.53 0.23 0.05 0.56 0.58 136 6.9 134 nH nH nH nH nH nH fF fF fF Valid up to 6GHz The SOT343 package has two emitter leads. To avoid high complexity to the package equivalent circuit both leads are combined in one electrical connection For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 2005-10-11 4 BFP520 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 120 mW 100 RthJS Ptot 90 80 70 K/W 60 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 50 40 30 20 10 0 0 20 40 60 80 100 120 C 10 2 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 s TS 10 tp Collector-base capacitance Ccb= (VCB) f = 1MHz Permissible Pulse Load Ptotmax/P totDC = (tp) 10 1 PtotMAX /PtotDC 0.3 CCB pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 0.5 1 1.5 2 V 3 VCB 2005-10-11 5 0 BFP520 Transition frequency fT = (IC) Power gain Gma, Gms , |S 21|2 = (f) f = 2 GHz VCE = 2 V, I C = 20 mA VCE = parameter in V 52 GHz 44 dB 2 44 36 40 1 32 32 G fT 36 Gms 28 24 28 24 20 |S21| Gma 0.75 20 16 16 12 12 8 8 0 0 4 0.5 4 5 10 15 20 25 30 35 mA 0 0 45 1 2 3 4 GHz IC f Power gain Gma, Gms = (I C) VCE = 2V Power gain Gma, Gms = (VCE) f = parameter in GHz f = parameter in GHz IC = 20 mA 32 32 0.9 dB 0.9 dB 1.8 24 1.8 24 2.4 20 G G 2.4 3 4 16 20 3 4 16 5 5 6 12 8 4 4 5 10 15 20 25 30 35 mA 6 12 8 0 0 6 0 0 45 IC 0.5 1 1.5 2 V 3 VCE 2005-10-11 6 BFP520 Noise figure F = (IC ) Noise figure F = (I C) VCE = 2 V, Z S = ZSopt VCE = 2 V, f = 1.8 GHz 3 3 dB dB F 2 F 2 1.5 1.5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 1 0.5 0 0 5 10 15 20 25 30 1 Zs = 50Ohm Zs = Zsopt 0.5 mA 0 0 40 5 10 15 20 25 mA 30 IC 40 IC Noise figure F = (f) Source impedance for min. VCE = 2 V, ZS = ZSopt noise figure vs. frequency VCE = 2 V, I C = 2 mA / 5 mA 3 +j50 dB +j25 +j100 +j10 3GHz 2 1.8GHz 4GHz F 0.9GHz 5GHz 6GHz 0 1.5 10 25 50 100 0.45GHz 2mA 5mA 1 -j10 IC = 5 mA IC = 2 mA 0.5 -j25 -j100 -j50 0 0 1 2 3 4 5 GHz 6.5 f 2005-10-11 7 Package SOT343 BFP520 Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout Manufacturer Pin 1 Date code (Year/Month) 2005, June Type code BGA420 Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2005-10-11 8 BFP520 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2005-10-11 9