Feb.2004
CM150DU-24NFH
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
MITSUBISHI IGBT MODULES
CM150DU-24NFH
HIGH POWER SWITCHING USE
¡IC...................................................................150A
¡VCES ......................................................... 1200V
¡Insulated T ype
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
C2E1
E2
C1
G2E2E1G1
CM
G1E1 E2G2
C2E1 C1
E2
94
16 16
2.5
21.2 7.5
2.5
25
7
17 23
24
114418
13
48
23 4
12 13.5
80 ±0.25 2–φ6.5
MOUNTING HOLES
3–M5NUTS
12mm deep TAB #110. t=0.5
30
+1
–0.5
LABEL
CIRCUIT DIAGRAM
T
C
measured point
Feb.2004
Gate-emitter threshold voltage
Thermal resistance*1
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 150A, VGE = 15V
VCC = 600V, IC = 150A
VGE1 = VGE2 = 15V
RG = 2.1Ω, Inductive load switching operation
IE = 150A
IE = 150A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied*2 (1/2 module)
IGBT part (1/2 module)
FWDi part (1/2 module)
IC = 15mA, VCE = 10V
IC = 150A, VGE = 15V
VCE = 10V
VGE = 0V
1200
±20
150
300
150
300
650
960
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM150DU-24NFH
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
W
°C
°C
V
N • m
N • m
g
1
0.5
6.5
—
24
2.0
0.45
—
150
80
400
150
150
—
3.5
0.19
0.35
—
0.13*3
0.21*3
21
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
°C/W
°C/W
Ω
—
—
5.0
5.0
—
—
—
680
—
—
—
—
—
7.5
—
—
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
6V
V
4.5 7.5
ns
Collector cutoff current
Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance*4
External gate resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Rth(j-c’)R
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : TC measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
*4 : TC’ measured point is just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
G-E Short
C-E Short
Operation (Note 2)
Pulse (Note 2)
Operation (Note 2)
Pulse (Note 2)
TC = 25°C
TC’ = 25°C*4
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol Parameter
Collector current
Emitter current
Mounting torque
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
PC’ (
Note 3
)
Tj
Tstg
Viso—
—
—
Unit
Typ.
Limits
Min. Max.
Test conditions
MAXIMUM RATINGS (Tj = 25°C)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Feb.2004
MITSUBISHI IGBT MODULES
CM150DU-24NFH
HIGH POWER SWITCHING USE
10
–1
10
0
10
1
10
2
2
3
5
7
2
3
5
7
2
3
5
7
50
0
100
150
200
250
300
14
10
–1
210
0
357 2 10
1
357 2 10
2
357
V
GE = 0V
Cies
Coes
Cres
0510 15 20
VCE = 10V
0
1
6
7
8
9
2
3
4
5
0 50 100 150 200 250 300
Tj = 25°C
Tj = 125°C
VGE = 15V
0
50
100
150
200
250
300
0246810
VGE=20
(V)
Tj = 25°C
12
9
8
11
10
13
0
2
4
6
8
10
61014188121620
Tj = 25°C
IC = 300A
IC = 150A
IC = 60A
10
1
10
2
2
3
5
7
012 435
10
3
2
3
5
7
T
j = 25°C
Tj = 125°C
15
Tj = 25°C
Tj = 125°C
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
GATE-EMITTER VOLTAGE VGE (V)
PERFORMANCE CURVES
Feb.2004
MITSUBISHI IGBT MODULES
CM150DU-24NFH
HIGH POWER SWITCHING USE
10
1
10
2
23 57 10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7Tj = 25°C
trr
Irr
10
1
10
2
23 57 10
3
23 57
2
3
5
7
2
3
5
7
10
0
10
2
10
1
10
3
2
3
5
7
td(off)
td(on)
tf
tr
0
5
10
15
20
0 200 400 600 800 1000
VCC = 600V
VCC = 400V
IC = 150A
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
Inductive load
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 25°C
Inductive load
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse
TC = 25°C
Per unit base =
Rth(j–c) = 0.19°C/W
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse
TC = 25°C
Per unit base =
Rth(j–c) = 0.35°C/W
10
1
10
2
2
3
5
7
10
3
2
3
5
7
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
