SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 1200 V Tc = 25 C 232 A Tc = 80 C 179 A 150 A ICnom ICRM SEMiX(R)1s tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 ... 20 V 10 s -40 ... 175 C Tc = 25 C 189 A Tc = 80 C 141 A 150 A 450 A VGES VCC = 800 V VGE 20 V Tj = 150 C VCES 1200 V Tj Inverse diode SEMiX151GAR12T4s IF Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180, Tj = 25 C A -40 ... 175 C Tc = 25 C 189 A Tc = 80 C 141 A 150 A 450 A -40 ... 175 C Tj Freewheeling diode IF Tj = 175 C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180, Tj = 25 C A Tj Module Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C It(RMS) Tstg Visol AC sinus 50Hz, t = 60 s 600 A -40 ... 125 C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 C 1.8 2.05 V Tj = 150 C 2.20 2.4 V Tj = 25 C 0.8 0.9 V Tj = 150 C 0.7 0.8 V IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel VCE0 rCE VGE(th) ICES Cies Coes Cres VGE = 15 V Tj = 25 C 6.7 7.7 m Tj = 150 C 10.0 10.7 m VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V 5 Tj = 25 C 5.8 6.5 V 0.1 0.3 mA Tj = 150 C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF QG VGE = - 8 V...+ 15 V 850 nC RGint Tj = 25 C 5.00 GAR (c) by SEMIKRON Rev. 22 - 09.07.2008 1 SEMiX151GAR12T4s Characteristics Symbol Conditions td(on) Eoff VCC = 600 V IC = 150 A Tj = 150 C RG on = 1 RG off = 1 di/dton = 3900 A/s di/dtoff = 2000 A/s Rth(j-c) per IGBT tr Eon td(off) tf min. typ. max. 185 Unit ns 42 ns 16.6 mJ 410 ns 70 ns 13.8 mJ 0.19 K/W typ. max. Unit Tj = 25 C 2.1 2.5 V Tj = 150 C 2.1 2.4 V V (R) SEMiX 1s Trench IGBT Modules SEMiX151GAR12T4s Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 rF IRRM Qrr Err Rth(j-c)D rF Qrr Err Rth(j-c)D Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 4.3 5.6 6.4 m 7.8 8.5 m Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 3400 A/s T = 150 C j VGE = -15 V T j = 150 C VCC = 600 V per diode Freewheeling diode VF = VEC IFnom = 150 A VGE = 0 V level = chiplevel VF0 IRRM min. 6.7 115 A 23 C 8.9 mJ 0.31 K/W Tj = 25 C 2.1 2.5 V Tj = 150 C 2.1 2.4 V V Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 4.3 5.6 6.4 m 6.7 7.8 8.5 m Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 3400 A/s T = 150 C j VGE = -15 V T j = 150 C VCC = 600 V per diode 115 A 23 C 8.9 mJ 0.31 K/W Module LCE RCC'+EE' res., terminal-chip 16 nH TC = 25 C 0.7 m TC = 125 C 1 m Rth(c-s) per module Ms to heat sink (M5) 3 0.075 5 Nm Mt to terminals (M6) 2.5 5 Nm 145 g w K/W Temperature sensor R100 Tc=100C (R25=5 k) 0,493 5% k B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 2% K GAR 2 Rev. 22 - 09.07.2008 (c) by SEMIKRON SEMiX151GAR12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 22 - 09.07.2008 3 SEMiX151GAR12T4s Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 22 - 09.07.2008 (c) by SEMIKRON SEMiX151GAR12T4s SEMiX 1s GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 22 - 09.07.2008 5