NSVBC847BTT1G - ON SEMICONDUCTOR

November, 2014 − Rev. 3 1Publication Order Number:

BC847ATT1/D

BC847ATT1, BC847BTT1,

BC847CTT1

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−75/SOT−416 package which

is designed for low power surface mount applications.

Features

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•Pb−Free Packages are Available

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 45 V

Collector−Base Voltage VCBO 50 V

Emitter−Base Voltage VEBO 6.0 V

Collector Current − Continuous IC100 mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation,

FR−4 Board (Note 1)

TA = 25°C

Derated above 25°C

PD200

1.6

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 1) RqJA 600 °C/W

Total Device Dissipation,

FR−4 Board (Note 2)

TA = 25°C

Derated above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 2) RqJA 400 °C/W

Junction and Storage

Temperature Range TJ, Tstg −55 to

+150 °C

1. FR−4 @ min pad.

2. FR−4 @ 1.0 × 1.0 in pad.

CASE 463

SC−75/SOT−416

STYLE 1

MARKING DIAGRAM

COLLECTOR

BASE

EMITTER

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XXMG

XX= Device Code

M = Date Code

G= Pb−Free Package

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

(Note: Microdot may be in either location)

BC847ATT1, BC847BTT1, BC847CTT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown V oltage

(IC = 10 mA) BC847 Series V(BR)CEO 45 − − V

Collector−Emitter Breakdown V oltage

(IC = 10 mA, VEB = 0) BC847 Series V(BR)CES 50 − − V

Collector−Base Breakdown Voltage

(IC = 10 mA) BC847 Series V(BR)CBO 50 − − V

Emitter−Base Breakdown Voltage

(IE = 1.0 mA) BC847 Series V(BR)EBO 6.0 − − V

Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO −

−−

−15

5.0 nA

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V) BC847A

BC847B

BC847C

(IC = 2.0 mA, VCE = 5.0 V) BC847A

BC847B

BC847C

hFE −

−

110

200

420

150

270

180

290

520

−

220

450

800

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −

−−

−0.25

0.6 V

Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −

−0.7

0.9 −

−V

Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580

−660

−700

770 mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

BC847ATT1, BC847BTT1, BC847CTT1

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Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

0.2 0.5 1.0 10 20 50

0.2 100

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

2.0 5.0 200

0.6

0.7

0.8

0.9

1.0

0.5

0.2

0.4

0.1

0.3

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.8

0.6

0.4

0.3

0.2 0.5 1.0 10 20 50

2.0 10070

307.05.03.00.70.30.1

0.2 1.0 10 100

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE = 10 V

TA = 25°C

-55°C to +125°C

TA = 25°C

IC = 50 mA IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

BC847ATT1, BC847BTT1, BC847CTT1

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BC847

Figure 5. Normalized Thermal Response

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

0.001

0.01

0.1

1.0

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 6. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

0.4 0.6 1.0 10 20

1.0 2.0 6.0 40

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

0.8 4.0 8.0

TA = 25°C

Cob

Cib

Figure 7. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

100

200

300

400

0.7 1.0 10 202.0 50

307.05.03.00.5

VCE = 10 V

TA = 25°C

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

BC847ATT1, BC847BTT1, BC847CTT1

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ORDERING INFORMATION

Device Marking Package Shipping†

BC847ATT1 1E SC−75/SOT−416 3,000 / Tape & Reel

BC847BTT1 1F SC−75/SOT−416 3,000 / Tape & Reel

BC847BTT1G 1F SC−75/SOT−416

(Pb−Free)

NSVBC847BTT1G* 1F SC−75/SOT−416

(Pb−Free) 3,000 / Tape & Reel

BC847CTT1G 1G SC−75/SOT−416

(Pb−Free) 3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

BC847ATT1, BC847BTT1, BC847CTT1

http://onsemi.com

PACKAGE DIMENSIONS

SC−75/SOT−416

CASE 463

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) D

−E−

−D−

3 PL

0.20 (0.008) E

DIM MIN NOM MAX

MILLIMETERS

A0.70 0.80 0.90

A1 0.00 0.05 0.10

C0.10 0.15 0.25

D1.55 1.60 1.65

e1.00 BSC

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.059 0.063 0.067

0.04 BSC

MIN NOM MAX

INCHES

0.15 0.20 0.30 0.006 0.008 0.012

L0.10 0.15 0.20

1.50 1.60 1.70 0.004 0.006 0.008

0.061 0.063 0.065

0.70 0.80 0.90 0.027 0.031 0.035

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BC847ATT1/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative

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specifically disclaims any and all l iabilit y, including without limitation special, consequential or i ncident al d amages. “Typical” parameters which may be provided in SCILLC data sheets

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