Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
TR : PNP Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
DC/DC Converter Applications
Ordering number:EN6354
CPH6702
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13100TS (KOTO) TA-2671 No.6354–1/4
0.05
0.9
0.7 0.2 1.6 0.60.6
0.95
123
654
2.8
0.2
2.9 0.15
0.4
Package Dimensions
unit:mm
2153A
[CPH6702]
˚C
˚C
1 : Emitter
2 : Base
3 : Anode
4 : Common (Collector, Cathode)
5 : Common (Collector, Cathode)
6 : Common (Collector, Cathode)
SANYO : CPH6
Marking : PB
Mounted on a ceramic board (600mm2×0.8mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Features
· Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
· The CPH6702 consists of two chips which are
equivalent to the CPH3114 and the SBS006, respec-
tively.
· Ultrasmall-sized package permitting applied sets to
be made small and slim (mounting height 0.9mm).
˚C
˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[ egatloVesaB-ot-rotcelloCV
OBC 51–V
egatloVrettimE-ot-rotcelloCV
OEC 51–V
egatloVesaB-ot-rettimEV
OBE 5–V
tnerruCrotcelloCI
C5.1–A
)esluP(tnerruCrotcelloCI
PC 3–A
tnerruCesaBI
B003–Am
noitapissiDrotcelloCP
C3.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 521+ot55–
]DBS[ egatloVesreveRkaePevititepeRV
MRR 03V
egatloVegruSesreveRkaePevititeper-noNV
MSR 03V
tnerruCtuptuOegarevAI
O7.0A
tnerruCegruSI
MSF elcyc1,evaweniszH05 01A
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
CPH6702
No.6354–2/4
Switching Time T est Circuit
[TR] [SBD]
++
50Ω
INPUT OUTPUT
VR
RB RL
VCC=–5V
220µF 470µF
10µs
VBE=5V
PW=20µsIB2
IB1
D.C.≤1%
50Ω100Ω10Ω
trr
10mA
100mA100mA
–5V
Duty≤10%
–20IB1= 20IB2= IC=–750mA
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
]RT[ tnerruCffotuCrotcelloCI
OBC VBC I,V21–= E0=1.0–Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4–= C0=1.0–Aµ
niaGtnerruCCD hEF VEC I,V2–= CAm001–= 002065
tcudorPhtdiwdnaB-niaGf
TVEC I,V2–= CAm003–= 053zHM
ecnaticapaCtuptuOboCV
BC zHM1=f,V01–= 71Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
EC )tas(I
CI,Am057–= BAm51–= 021–081–Vm
egatloVnoitarutaSrettimE-ot-esaBV
EB )tas(I
CI,Am057–= BAm51–=58.0–2.1–V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01–= E0=51–V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1–= EB =∞51–V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( ICI,Aµ01–= C0=5–V
emiTNO-nruTt
no .tiucriCtseTdeificepseeS05sn
emiTegarotSt
gts .tiucriCtseTdeificepseeS78sn
emiTllaFt
f.tiucriCtseTdeificepseeS51sn
]DBS[ egatloVesreveRV
RIRAm5.0=03V
egatloVdrawroF VF1I
FA3.0=53.004.0V
VF2I
FA5.0=24.074.0V
VF3I
FA7.0=5.055.0V
tnerruCesreveRI
RVRV01= 002Aµ
ecnaticapaClanimretretnICV
RzHM1=f,V01=02Fp
emiTyrevoceResreveRt
rr IFI= R.tiucriCtseTdeificepseeS,Am001= 01sn
Electrical Connection
456
123
(Top view)
CPH6702
No.6354–3/4
1000
100
10
fT -- IC100
10
1.0
Cob -- VCB
VCE(sat) -- ICVCE(sat) -- IC
--10
--0.1
--1.0
VBE(sat) -- IC--10
--1.0
--0.1
--0.01
A S O
Ta=75°C
--25°C
25°C
Ta=--25°C
75°C
7
5
3
2
7
5
3
2
--1.0 --10
23 57 23
f=1MHz
7
5
3
2
7
5
3
2
--0.01 --0.1 --1.0
23 57 23 57 23
VCE=--2V
--1000
--100
--10
7
5
3
2
7
5
3
2
7
--0.01 --0.1 --1.0
23 57 23 57 23
IC / IB=20
IC / IB=50
--1000
--100
--10
7
5
3
2
7
5
3
2
7
--0.01 --0.1 --1.0
2 3 57 2 3 57 2 3
7
5
3
2
7
5
3
2
7
5
3
2
--0.1 --1.0 --10
23 57 23 57 23
7
5
3
2
7
5
3
2
--0.01 --0.1 --1.0
23 57 23 57 23
IC / IB=50
100µs
500µs
1ms
10ms
100ms
DC operation
--25°C
25°C
Ta=75°C
[TR] [TR]
[TR] [TR]
[TR][TR]
IT01663
IT01665
IT01667
IT01664
IT01666
IT01668
25°C
ICP=--3A
IC=--1.5A
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–A
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB –V
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Ta=25°C
Single pulse
Mounted on a ceramic board(600mm2×0.8mm)
--1.0
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
IC -- VBE
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
1000
7
5
3
2
7
5
3
2
7
5
3
2
100
10
1.0
hFE -- IC
--0.01 23 57 23 57 23 5
--0.1 --1.0
--25°C
Ta=75°C
VCE=--2V VCE=--2V
Ta=75°C
25°C
--25°C
[TR] [TR]
25°C
IT01661 IT01662
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
DC Current Gain, hFE
Collector Current, IC–A
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2000. Specifications and information herein are subject
to change without notice.
CPH6702
PS No.6354–4/4
IT01669 IT01670
1.8
1.6
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
PC -- Ta
0 20 40 60 80 100 120 140 160
10
1.0
0.1
0.01
IF -- VF
0 0.2 0.4 0.6 0.8
Ta=125°C
25°C
7
5
3
2
7
5
3
2
7
5
3
2
[TR] [SBD]
75°C
50°C
100°C
Collector Dissipation, PC–W
Ambient Temperature, Ta – °C
Mounted on a ceramic board (600mm
2
×0.8mm)
Forward Current, IF–A
Forward Voltage, VF–V
IT01671 IT01672
100
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
10
1.0
0.1
0.01
IR -- VR
0 5 10 15 20 25 30
100°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
PF(AV) -- IO
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
⁄
¤
360°
360°
θ
180°
[SBD] [SBD]
› ‹
Ta=125°C
50°C
75°C
25°C
Reverse Current, IR–mA
Average Forward Power Dissipation, PF(AV) -- W
Reverse Voltage, VR–V Average Forward Current, IO -- A
Rectangular wave
Sine wave
⁄Rectangular wave θ=60°
¤Rectangular wave θ=120°
‹Rectangular wave θ=180°
›Sine wave θ=180°
