Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT PD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The PD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package. FEATURES : Pout = +21 dBm MIN. @Pin = -5 dBm, f = 1.9 GHz, VDS = 3.0 V * Output Power : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V * Single Supply voltage : VDS = 3.0 V TYP. * Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting. APPLICATIONS * 1.9 GHz applications (Example : PHS etc.) * 2.4 GHz applications (Example : Wireless LAN etc.) ORDERING INFORMATION (Pb-Free) Part Number PD5702TU-E2-A Package 8-pin Lead-Less Minimold Marking 5702 Supplying Form * 8 mm wide embossed taping * Pin 5, 6, 7, 8 indicates pull-out direction of tape * Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PD5702TU-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10455EJ01V0DS (1st edition) Date Published November 2003 CP(K) (c) NEC Compound Semiconductor Devices 2003 PD5702TU PIN CONNECTION AND INTERNAL BLOCK DIAGRAM (Top View) Q2 8 Pin2 7 Pin2 3 6 GND 4 5 Pout1 Pout2 1 Pout2 2 GND Pin1 Q1 2 Preliminary Data Sheet PU10455EJ01V0DS PD5702TU ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Drain to Source Voltage VDS TA = +25C 8.0 V Gate to Source Voltage VGS TA = +25C 8.0 V Drain Current of Q1 Ids1 TA = +25C 45 mA Drain Current of Q2 Ids2 TA = +25C 259 mA Total Power Dissipation PD TA = +85C 4.33 W Channel Temperature Tch 150 C Storage Temperature Tstg -65 to +150 C Operating Ambient Temperature TA -40 to +85 C Maximum Input Power to Q1 Pin1 TA = +25C 6 dBm Maximum Input Power to Q2 Pin2 TA = +25C 16 dBm Note Note Mounted on 33 x 21 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage VDS TA = +25C 2.7 3.0 3.5 V Gate to Source Voltage VGS TA = +25C 0 2.0 2.5 V Maximum Input Power to Q1 Pin1 VDS = 3V, TA = +25C 2.0 5.0 dBm Maximum Input Power to Q2 Pin2 VDS = 3V, TA = +25C 11.0 15.0 dBm ELECTRICAL CHARACTERISTICS (f = 1.9 GHz, VDS = 3.0 V, TA = +25C, unless otherwise specified, using our standard test fixture.) Parameter Gate to Source Voltage Power Added Efficiency Drain Current Symbol MIN. TYP. MAX. Unit 1.0 1.9 2.5 V - 28.0 - % - 155 230 mA - 10 - dB - 8 - dB 21.0 - - dBm 26.0 - - dB Pin = -20 dBm - 26.5 - dB Padj1 Pin = -5 dBm, 600 kHz - -60.0 -55.0 dBc Padj2 Pin = -5 dBm, 900 kHz - -70.0 -60 dBc OBW Pin = -5 dBm - 250 - kHz VGS PAE Pin = -5 dBm Pout = +21.0 dBm Note IDS Input Return Loss IRL Output Return Loss ORL Output Power Pout Power Gain GP Linear Gain GL Adjacent Channel Power Leakage Test Conditions Pin = -20 dBm Pin = -5 dBm 1 Adjacent Channel Power Leakage 2 Occupied Band Width Note IDS is total Drain currents of Q1 and Q2 part. Preliminary Data Sheet PU10455EJ01V0DS 3 PD5702TU ELECTRICAL CHARACTERISTICS (f = 2.4 GHz, TA = +25C, unless otherwise specified, using our standard test fixture.) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Pin = +2 dBm - 1.9 - V Pout = +22.0 dBm - 28.0 - % - 180 - mA - 10 - dB - 10 - dB 22.0 - - dBm 20.0 - - dB Pin = +2 dBm - 1.9 - V Pout = +21.0 dBm - 27.5 - % - 150 - mA - 10 - dB - 10 - dB 21.0 - - dBm 19.0 - - dB MIN. TYP. MAX. Unit - 4.35 - VDS = 3.3 V Gate to Source Voltage Power Added Efficiency Drain Current VGS PAE Note IDS Input Return Loss IRL Output Return Loss ORL Output Power Pout Power Gain GP Pin = -20 dBm Pin = +2 dBm VDS = 3.0 V Gate to Source Voltage Power Added Efficiency Drain Current VGS PAE Note IDS Input Return Loss IRL Output Return Loss ORL Output Power Pout Power Gain GP Pin = -20 dBm Pin = +2 dBm Note IDS is total Drain currents of Q1 and Q2 part. DC CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions Q1 On-state Resistance1 Drain to Source Breakdown Ron1 VDS = 0.1 V, VGS = 6 V BVDSS1 IDS = 1.4 A 10.0 - - V BVGSS1 IGS = 1.4 A 4.0 - - V Voltage1 Gate to Source Breakdown Voltage1 Gate Threshold Voltage1 Vth1 VDS = 3.5 V, IDS = 1.4 mA 1.15 1.40 1.65 V Transconductance1 gm1 VDS = 3.5 V, IDS = 25 mA 50 70 - mS Ron2 VDS = 0.1 V, VGS = 6 V - 1.02 - Q2 On-state Resistance2 Drain to Source Breakdown BVDSS2 IDS = 8.0 A 10.0 - - V BVGSS2 IGS = 8.0 A 4.0 - - V Voltage2 Gate to Source Breakdown Voltage2 Gate Threshold Voltage2 Vth2 VDS = 3.5 V, IDS = 8.0 mA 1.15 1.40 1.65 V Transconductance2 gm2 VDS = 3.5 V, IDS = 150 mA 290 370 - mS 4 Preliminary Data Sheet PU10455EJ01V0DS PD5702TU TYPICAL CHARACTERISTICS (Preliminary) (f = 1.9 GHz, VDS = 3 V, VGS = 2 V, TA = +25C, unless otherwise specified) POWER GAIN vs. INPUT POWER 35 30 30 25 25 Power Gain GP (dB) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 35 20 15 10 5 0 -5 -15 20 15 10 5 0 -10 -5 0 5 -5 -15 10 -10 0 5 10 Input Power Pin (dBm) Padj vs. INPUT POWER DRAIN CURRENT vs. INPUT POWER 0 250 -20 IDS (mA) Padj1 (+600 kHz) Padj1 (-600 kHz) Padj2 (+900 kHz) Padj2 (-900 kHz) -10 -30 Drain Current Adjacent Channel Power Leakage Padj (dBc) Input Power Pin (dBm) -5 -40 -50 -60 200 150 100 50 -70 -80 -15 -10 -5 0 5 10 0 -15 Input Power Pin (dBm) -10 -5 0 5 10 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet PU10455EJ01V0DS 5 PD5702TU ADJACENT CHANNEL POWER (f = 1.9 GHz, VDS = 3 V, Pin = -5 dBm, TA = +25C, unless otherwise specified) ATTEN 20 dB RL 5.0 dBm 10 dB/ MKR -71.17 dB 600 kHz D Center 1.900 GHz RBW 1.0 kHz VBW 3.0 kHz Span 2.000 MHz SWP 10.0 s Remark The graphs indicate nominal characteristics. 6 Preliminary Data Sheet PU10455EJ01V0DS PD5702TU TYPICAL CHARACTERISTICS (Preliminary) (f = 2.4 GHz, VDS = 3 V, VGS = 2 V, TA = +25C, unless otherwise specified) POWER GAIN vs. INPUT POWER 35 30 30 25 25 Power Gain GP (dB) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER 35 20 15 10 5 0 20 15 10 5 0 -5 -15 -10 -5 0 5 10 -5 -15 Input Power Pin (dBm) -10 -5 0 5 10 Input Power Pin (dBm) DRAIN CURRENT vs. INPUT POWER Drain Current IDS (mA) 250 200 150 100 50 0 -15 -10 -5 0 5 10 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet PU10455EJ01V0DS 7 PD5702TU PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) (Top View) 7 6 5 5 6 7 8 1.4 0.4 0.1 2.0 5702 2.2 0.4 8 (Bottom View) 1 2 3 0.16 4 0.25 0.25 0.75 0.5 4 2.0 8 Preliminary Data Sheet PU10455EJ01V0DS 3 0.75 2 1 PD5702TU RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow VPS Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (package surface temperature) : 215C or below Time at temperature of 200C or higher : 25 to 40 seconds Preheating time at 120 to 150C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less IR260 VP215 WS260 Preheating temperature (package surface temperature) : 120C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Preliminary Data Sheet PU10455EJ01V0DS 9 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. 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