PRELIMINARY GA75TS120K
“HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated
Ultra-FastTM Speed IGBT
Features
•Generation 5 IGBT NPT technology VCES=1200V
•UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200 VCE(on) typ.=2.5V
kHz in resonant mode.
•Very low conduction and switching losses @VGE=15V,IC=75A
•HEXFRED TM antiparallel diodes with ultra-soft
recovery
•Industry standard package
•UL recongnition pending
•Short circuit rated 10 µs
Benefits
•Increased operating efficiency
•Direct mounting to heatsink
•Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
•Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector- to- Emitter Voltage 1200 V
IC @ Tc=25oC Continuous Collector Current 100
IC @ Tc=85oC Continuous Collector Current 75
ICM Pulsed collector Current 150 A
ILM Peak switching Current 150
IFM Peak Diode Forward Current 150
VGE Gate- to- Emitter Voltage ± 20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t =1 min 2500
PD
@ TC
=25oC Maximum Power Dissipation 625 W
PD
@ TC
=85oC Maximum Power Dissipation 325
TJOperating Junction Temperature Range -40 to +150 oC
TSTG Storage Temperature Range -40 to +125
Termal / Mechanical Characteristics
Parameter Typ. Max. Units
RθJC Termal Resistance, Junction-to- Case- IBGT - 0.20
RθJC Termal Resistance, Junction-to- Case- Diode - 0.35 oC/W
RθCS Termal Resistance, Csar-to- Sink- Module 0.1 -
Mouting Torque, Case-to-Heatsink - 4.0 N.m
Mouting Torque, Case-to-Terminal 1,2 & 3 - 3.0
Weight of Module 200 - g
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Electrical Characteristics @ TJ=25oC(unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
VGE=0V,
IC=1mA
VCE(ON) Collector-to-Emitter Voltage
2.5
VGE=15V, IC=75A
2.7
V VGE=15V, IC=75A,TJ=125oC
VGE(th)Gate Threshold Voltage 4.5
5.5 VCE=6V, IC=750µA
DVGE(th)DTJTemperature Coeff. of Threshold Voltage
-11
mV/oCVCE=VGE,
IC=750µA
gfe Forward Ttansconductance
107
S VCE=25V, IC=75A
ICES Collector - to - Emitter Leaking Current
1.0 mA VGE=0V, VCE=1200V
10 VGE=0V, VCE=1200V,
TJ=125oC
VFM Diode Forward Voltage - Maximum
2.0 2.5 V IF=75A , VGE=0V
1.8
IF=75A , VGE=0V ,TJ=125oC
IGES Gate - to - Emitter Leakage Current
100 nA VGE=±20V
Dynamic Characteristics - TJ=125oC (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
QgTotal gate charge ( turn - on ) 570 855 VCC= 400V
Qge Gate - Emitter charge ( turn - on ) 96 144 nC IC=96A
Qgc Gate - Collector charge ( turn - on ) 189 283 TJ =25oC
Td(on) Turn - On Delay Time 100 RG1 =15Ω , RG2 = 0Ω
trRise Time 100 nS IC = 75A
Td(off) Turn - Off Delay Time 392 VCC=720V
tfFall Time 70 VGE=±15V
Eon Turn - On Switching Energy 17
Eoff(1) Turn - Off Switching Energy 9 mJ
Ets(1) Total Switching Energy 26 35
Cies Input Capacitance 12812 VGE = 0V
Coes Output Capacitance 570 pF VCC = 30V
Cres Reverse Transfer Capacitance 110 f =1MHZ
trr Diode Reverse Recovery Time 174 nS IC = 75A
Irr Diode Peak Reverse Current 104 A RG1=15Ω
Qrr Diode Recovery Charge 7064 nC RG2=0Ω
di(rec)M/dt Diode Peak Rate of Fall of Recovery 1400 A/µs VCC=720V
During tb di/dt=1300A/µs
Tsc Short circuit withstand time 10 µsVCC=720V, VGE=±15V Min.
RG1=15Ω, VCEP=1100V
GA75TS120K XI'AN IR-PERI
Company
2
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Appendix:
Circuit configuration for Half bridge IGBT Modules
T----Half Bridge
H---Chopper High Side
L---Chopper Low Side
T*K---Common Anode Half Bridge
GAxxxTxxxx
4(G) 5(E) 6(G) 7(E)
3(C) 1(E C) 2(E)
GAxxxHxxxx
4(G)
3(C)
5(E)
1(E K) 2(A)
2(C)
7(E)
GAxxxLxxxx
3(K)
6(G) 7(E)
1(A C) 2(E)
4(G)
GAxxxTxKxxx
5(E) 6(G)
3(C) 1(E E)
3
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Company
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