XI'AN IR-PERI Company PRELIMINARY " HALF-BRODGE" IGBT INT-A -PAK GA75TS120K Short Circuit Rated Ultra-FastTM Speed IGBT Features * * VCES=1200V Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 s * * * * * VCE(on) typ.=2.5V @VGE=15V,IC=75A Benefits * * * Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing * Absolute Maximum Ratings Parameter VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC =25oC PD @ TC =85oC TJ TSTG Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 1200 100 75 150 150 150 20 2500 625 325 -40 to +150 -40 to +125 V A V W C o Termal / Mechanical Characteristics Parameter RJC RJC RCS Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module 1 http://store.iiic.cc/ Typ. Max. 0.1 200 0.20 0.35 4.0 3.0 - Units o C/W N.m g XI'AN IR-PERI Com pany GA75TS120K Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 VGE=0V, IC=1mA VCE(ON) Collector-to-Emitter Voltage 2.5 VGE=15V, IC=75A 2.7 V VGE=15V, IC=75A,TJ=125oC VGE(th) Gate Threshold Voltage 4.5 5.5 DVGE(th)DTJ Temperature Coeff. of Threshold Voltage -11 gfe Forward Ttansconductance 107 S VCE=25V, IC=75A ICES Collector - to - Emitter Leaking Current 1.0 mA VGE=0V, VCE=1200V 10 VCE=6V, IC=750A mV/oC VCE=VGE, IC=750A VGE=0V, VCE=1200V, TJ=125oC VFM IGES Diode Forward Voltage - Maximum Gate - to - Emitter Leakage Current 2.0 2.5 1.8 100 V IF=75A , VGE=0V IF=75A , VGE=0V ,TJ=125oC nA VGE= 20V Dynamic Characteristics - TJ=125oC (unless otherwise specified) Parameter Min. Typ. Max. 570 855 96 144 189 283 Turn - On Delay Time 100 Qg Total gate charge ( turn - on ) Qge Gate - Emitter charge ( turn - on ) Qgc Gate - Collector charge ( turn - on ) Td(on) Units Conditions VCC= 400V nC IC=96A TJ =25oC RG1 =15 , RG2 = 0 tr Rise Time 100 Td(off) Turn - Off Delay Time 392 VCC=720V tf Fall Time 70 VGE= 15V Eon Turn - On Switching Energy 17 Eoff(1) Turn - Off Switching Energy 9 Ets(1) Total Switching Energy 26 35 nS IC = 75A mJ Cies Input Capacitance 12812 Coes Output Capacitance 570 Cres Reverse Transfer Capacitance 110 trr Diode Reverse Recovery Time 174 nS IC = 75A Irr Diode Peak Reverse Current 104 A RG1=15 Qrr Diode Recovery Charge 7064 nC RG2=0 di(rec)M/dt Diode Peak Rate of Fall of Recovery 1400 A/s VCC=720V VGE = 0V pF f =1MHZ During tb Tsc Short circuit withstand time VCC = 30V di/dt=1300A/s 10 s VCC=720V, VGE= 15V Min. RG1=15, VCEP=1100V 2 http://store.iiic.cc/ XI'AN IR-PERI Com pany Appendix: Circuit configuration for Half bridge IGBT Modules T----Half Bridge H---Chopper High Side L---Chopper Low Side T*K---Common Anode Half Bridge 3(C) 1(E C) 4(G) 5(E) 2(E) 6(G) 3(C) 7(E) 1(E K) 4(G) GAxxxTxxxx 3(K) 2(A) 5(E) GAxxxHxxxx 1(A C) 2(E) 6(G) 3(C) 7(E) 1(E E) 4(G) GAxxxLxxxx 5(E) 7(E) GAxxxTxKxxx 3 http://store.iiic.cc/ 2(C) 6(G)