Phototransistors
1
Publication date: June 2007 SHE00014CED
PNZ120S (PN120S)
Silicon planar type
For optical control systems
■Features
•High sensitivity
•Wide directivity characteristics for easy use
•Fast response: tr , tf = 3 µs (typ.)
•Signal mixing capability using base pin
•Small size (φ3) ceramic package
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) VCEO 30 V
Emitter-collector voltage (Base open) VECO 5V
Collector current IC20 mA
Collector power dissipation PC50 mW
Operating ambient temperature Topr −25 to +85 °C
Storage temperature Tstg −30 to +100 °C
1: Collector
2: Emitter
50 ΩRL
VCC
Sig. out 10%
90%
Sig. in
trtf
(Input pulse)
(Output pulse)
tr: Rise time
tf: Fall time
Note) The part number in the parenthesis shows conventional part number.
φ3.0
±0.2
φ0.45
±0.05
φ0.3
±0.05
0.9
±0.15
4.1
±0.3
2.0
±0.2
12.5 min.
2
1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5. *1: Source: Tungsten (color temperature 2
856 K)
*2: Rank classification
*3: Switching time measurement circuit
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent *1, *2ICE(L)1 VCE = 10 V, L = 2 lx 3 µA
ICE(L)2 VCE = 10 V, L = 500 lx 1.0 mA
Dark current ICEO VCE = 10 V 5 500 nA
Peak emission wavelength λpVCE = 10 V 800 nm
Half-power angle θThe angle from which photocurrent 50 °
becomes 50%
Rise time *3trVCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω3µs
Fall time *3tf3µs
Collector-emitter saturation voltage *1VCE(sat) ICE(L) = 1 mA, L = 1
000 lx 0.2 0.5 V
■Electrical-Optical Characteristics Ta = 25°C ± 3°C
Rank QL RL SL Q R S
ICE(L)1 3 to 16 10 to 30 >24
ICE(L)2 5 typ. 6 typ. 8 typ. 1.0 to 5.0 4.0 to 9.0 >7.0
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