AON2408
20V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=4.5V) 8A
R
DS(ON)
(at V
GS
=4.5V) < 14.5mΩ
R
DS(ON)
(at V
GS
=2.5V) < 19mΩ
Symbol
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
20
The AON2408 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
V
Maximum Units
20V
DFN 2x2B
Top View Bottom View
Pin 1
DD
G
D
D
SD
S
G
D
S
Pin 1
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
2.8
T
A
=100°C
±12
Power Dissipation
A
32Pulsed Drain Current
C
P
D
6
Drain-Source Voltage
20
Maximum Junction-to-Ambient
A D
80
-55 to 150
Units
Junction and Storage Temperature Range
45
Parameter
V
8
Gate-Source Voltage
W
T
A
=25°C
T
A
=70°C 1.8 °C
Thermal Characteristics Typ Max
Maximum Junction-to-Ambient
A
°C/W
R
θJA
37
66 °C/W
V
A
Continuous Drain
Current
G
I
D
T
A
=25°C
www.aosmd.com Page 1 of 6
AON2408
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 0.5 0.83 1.2 V
I
D(ON)
32 A
11.6 14.5
T
J
=125°C 16.3 20.5
15 19 mΩ
g
FS
50 S
V
SD
0.65 1 V
I
S
3.5 A
C
iss
782 pF
C
oss
158 pF
C
rss
98 pF
R
g
2.4 Ω
Q
g
7 nC
Q
gs
1 nC
Q
gd
2.4 nC
t
D(on)
3 ns
t
r
4.5 ns
t
28
ns
Turn-Off DelayTime
I
S
=1A,V
GS
=0V
Turn-On Rise Time
Diode Forward Voltage
V
GS
=0V, V
DS
=0V, f=1MHz
Gate Drain Charge
Input Capacitance
Output Capacitance
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
GS
=2.5V, I
D
=4A
V
DS
=5V, I
D
=8A
Forward Transconductance
V
GS
=4.5V, V
DS
=5V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
µA
V
DS
=V
GS
,
I
D
=250µA
V
GS
=4.5V, I
D
=8A
Turn-On DelayTime V
GS
=4.5V, V
DS
=10V, R
L
=1.25Ω,
R
=3
Ω
Gate resistance
Total Gate Charge
Reverse Transfer Capacitance
V
GS
=4.5V, V
DS
=10V, I
D
=8A
Gate Source Charge
Drain-Source Breakdown Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
V
DS
=0V, V
GS
=±12V
V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
On state drain current
I
D
=250µA, V
GS
=0V
t
D(off)
28
ns
t
f
6 ns
t
rr
11 ns
Q
rr
2.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/µs
Turn-Off DelayTime
R
GEN
=3
Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=8A, dI/dt=100A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
The Power dissipation PDSM is based on R θJA t ≤10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Dec. 2011 www.aosmd.com Page 2 of 6
AON2408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
10
20
30
40
50
0 4 8 12 16
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=8A
VGS=2.5V
ID=4A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=2.5V
0
10
20
30
40
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=1.5V
1.8V
4.5V 2.5V
3.5V
VGS=1.8V
VGS=1.8V
ID=2A
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
10
20
30
40
50
0246810
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=8A
25°C
125°C
Rev 0: Dec 2011 www.aosmd.com Page 3 of 6
AON2408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
02468
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=10V
ID=8A
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction
-
to
-
TA=25°C
Operating Area (Note F)
Figure 11: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
RθJA=80°C/W
Rev 0: Dec 2011 www.aosmd.com Page 4 of 6
AON2408
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
DUT Vgs
Diode Recovery Test Circuit & Waveforms
Vds + rr
Q = - Id t
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Ig
Vgs
-
+
VDC
L
Vds
Isd
Isd
Vds - IFdI/dt
IRM Vdd
Vdd
trr
Rev 0: Dec 2011 www.aosmd.com Page 5 of 6