VIPER115XSTR - STMICROELECTRONICS

This is information on a product in full production.

December 2018 DS11873 Rev 3 1/35

VIPer11

Energy saving off-line high voltage converter

Datasheet - production data

Features

•800 V avalanche-rugged power MOSFET

allowing ultra wide VAC input range to be

covered

•Embedded HV startup and sense-FET

•Current mode PWM controller

•Drain current limit protection

– 480 mA (VIPER114)

– 590 mA (VIPER115)

•Wide supply voltage range: 4.5 V to 30 V

•Minimized system input power consumption:

– Less than 10 mW at 230 VAC in no-load

condition

– Less than 400 mW at 230 VAC with 250

mW load

•Jittered switching frequency reduces the EMI

filter cost:

– 30 kHz ± 7% (type X)

– 60 kHz ± 7% (type L)

•Embedded E/A with 1.2 V reference

•Protections with automatic restart:

overload/short-circuit (OLP), line or output

OVP, max. duty cycle counter, VCC clamp

•Pulse-skip protection to prevent flux- runaway

•Embedded thermal shutdown

•Built-in soft-start for improved system reliability

Applications

•Low power SMPS for home appliances, home

automation, industrial, consumer, lighting

•Low power adapters

Description

The device is a high voltage converter smartly

integrating an 800 V avalanche-rugged power

MOSFET with PWM current mode control. The

power MOSFET with 800 V breakdown voltage

allows the extended input voltage range to be

applied, as well as the size of the DRAIN snubber

circuit to be reduced. This IC meets the most

stringent energy-saving standards as it has very

low consumption and operates in pulse frequency

modulation under light load. The design of

flyback, buck and buck boost converters is

supported. The integrated HV startup, sense-

FET, error amplifier and oscillator with jitter allow

a complete application to be designed with the

minimum number of components.

Figure 1. Basic application schematic

SSOP10

".

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Contents VIPer11
2/35 DS11873 Rev 3
Contents
Pin setting  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical and thermal ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  6
Typical electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
General description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
2 Typical power capability  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
3 Primary MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
4 High voltage startup  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
5 Soft-start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
6 Oscillator   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
7 Pulse-skipping  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
8 Direct feedback   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
9 Secondary feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
10 Pulse frequency modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
11 Overload protection  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
12 Max. duty cycle counter protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
13 VCC clamp protection   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
14 Disable function  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  22
15 Auto-restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
16 Thermal shutdown  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25
Application information   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
1 Typical schematics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
2 Energy saving performance  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  29
3 Layout guidelines and design recommendations  . . . . . . . . . . . . . . . . . . .  30
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
1 SSOP10 package information   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  32

DS11873 Rev 3 3/35

VIPer11 Contents

7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Pin setting VIPer11

4/35 DS11873 Rev 3

1 Pin setting

Figure 2. Connection diagram

Table 1. Pin description

SSOP10 Name Function

1GND

Ground and MOSFET source. Connection of source of the internal MOSFET

and the return of the bias current of the device. All groundings of bias

components must be tied to a trace going to this pin and kept separate from the

pulsed current return.

2VCC

Controller supply. An external storage capacitor has to be connected across

this pin and GND. The pin, internally connected to the high voltage current

source, provides the VCC capacitor charging current at startup. A small bypass

capacitor (0.1 μF typ.) in parallel, placed as close as possible to the IC, is also

recommended, for noise filtering purpose.

3DIS

Disable. If its voltage exceeds the internal threshold VDIS_th (1.2 V typ.) for

more than tDEB time (1 ms, typ.), the PWM is disabled. An input overvoltage

protection can be built by connecting a voltage divider between DIS pin and the

rectified mains. In case of non-isolated topologies, with the same principle an

output overvoltage protection can be implemented. If the disable function is not

required, DIS pin must be soldered to GND, which excludes the function.

4FB

Direct feedback. It is the inverting input of the internal transconductance E/A,

which is internally referenced to 1.2 V with respect to GND. In case of non-

isolated converter, the output voltage information is directly fed into the pin

through a voltage divider. In case of primary regulation, the FB voltage divider is

connected to the VCC. The E/A is disabled soldering FB to GND.

5COMP

Compensation. It is the output of the internal E/A. A compensation network is

placed between this pin and GND to achieve stability and good dynamic

performance of the control loop. In case of secondary feedback, the internal E/A

must be disabled and the COMP directly driven by the optocoupler to control the

DRAIN peak current setpoint.

6 to 10 DRAIN

MOSFET drain. The internal high voltage current source sinks current from this

pin to charge the VCC capacitor at startup and during steady-state operation.

These pins are mechanically connected to the internal metal PAD of the

MOSFET in order to facilitate heat dissipation. On the PCB a copper area must

be placed under these pins in order to decrease the total junction-to-ambient

thermal resistance thus facilitating the power dissipation.

DS11873 Rev 3 5/35

VIPer11 Electrical and thermal ratings

2 Electrical and thermal ratings

Table 2. Absolute maximum ratings

Symbol Pin Parameter(1), (2)

1. Stresses beyond those listed absolute maximum ratings may cause permanent damage to the device.

2. Exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability.

Min. Max. Unit

VDS 6 to 10 Drain-to-source (ground) voltage -0.3 800 V

IDRAIN 6 to 10 Pulsed drain current (pulse-width limited by SOA) - 2 A

VCC 2VCC voltage -0.3

Internally

limited V

ICC 2 VCC internal Zener current (pulsed) - 45(3)

3. Pulse-width limited by maximum power dissipation, PTOT

VDIS 3 DIS voltage -0.3 5(4)

4. The AMR value is intended when VCC ≥ 5 V, otherwise the value VCC + 0.3 V has to be considered.

VFB 4FB voltage -0.3 5

(4) V

VCOMP 5 COMP voltage -0.3 5((4) V

PTOT - Power dissipation at Tamb < 50 °C - 1(5)

5. When mounted on a standard single side FR4 board with 100 mm² (0.1552 inch) of Cu (35 µm thick).

TJ- Junction temperature operating range -40 150 °C

TSTG - Storage temperature -55 150 °C

Table 3. Thermal data

Symbol Parameter

Max. value

Unit

SSOP10

RthJP Thermal resistance junction-pin 35

°C/W

RthJA(1)

1. Derived by characterization.

Thermal resistance junction-ambient (dissipated power 1 W) 145

Thermal resistance junction-ambient (dissipated power 1 W)(2)

2. When mounted on a standard single side FR4 board with 100 mm² (0.1552 inch) of Cu (35 µm thick).

Electrical and thermal ratings VIPer11

6/35 DS11873 Rev 3

Figure 3. RthJA / (RthJA at A = 100 mm²)

Electrical characteristics

Tj = -40 to 125 °C, VCC = 9 V (unless otherwise specified).

Table 4. Avalanche characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

IAR Avalanche current Repetitive and non-repetitive.

Pulse-width limited by TJmax

--0.8A

EAS

Single pulse avalanche

energy(1)

1. Parameter derived by characterization.

IAS = IAR VDS = 100 V

Starting TJ = 25 °C --1mJ

Table 5. Power section

Symbol Parameter Test conditions Min. Typ. Max. Unit

VBVDSS Breakdown voltage

IDRAIN = 1 mA

VCOMP = GND

TJ = 25 °C

800 - - V

IDSS Drain-source leakage current

VDS = 400 V

VCOMP = GND

TJ = 25 °C

--1

µA

IOFF OFF-state drain current

VDRAIN = max. rating

VCOMP = GND

TJ = 25 °C

--45

DS11873 Rev 3 7/35

VIPer11 Electrical and thermal ratings

RDS(on) Static drain-source ON-resistance

IDRAIN = 295 mA

TJ = 25 °C --17

IDRAIN = 295 mA

TJ = 125 °C --34

COSS

Equivalent output capacitance

VGS = 0

VDS = 0 to 640 V

TJ = 25 °C

-10- pF

Table 6. Supply section

Symbol Parameter Test conditions Min. Typ. Max. Unit

High voltage start-up current source

VBVDSS_SU

Breakdown voltage of start-up

MOSFET TJ = 25 °C 800 - - V

VHV_START Drain-source start-up voltage - - - 26 V

RGStart-up resistor

VFB > VFB_REF

VDRAIN = 400 V

VDRAIN = 600 V

28 34 40 MΩ

ICH1 VCC charging current at startup VDRAIN = 100 V

VCC = 0 V 0.7 1 1.3

ICH2 VCC charging current at startup

VFB > VFFB_REF

VDRAIN = 100 V

VCC = 6 V

234

ICH3(1) Max. VCC charging current in

self-supply

VFB > VFB_REF

VDRAIN = 100 V

VCC = 6 V

6.5 7.5 8.5

IC supply and consumptions

VCC Operating voltage range VGND = 0 V 4.5 - 30 V

VCCclamp Clamp voltage ICC = Iclamp_max 30 32.5 35 V

Iclamp max Clamp shutdown current (2) 30 35 40 mA

tclamp max Clamp time before shutdown - 400 500 600 µs

VCCon VCC start-up threshold VFB = 1.2 V

VDRAIN = 400 V 15 16 17 V

VCSon

HV current source turn-on

threshold VCC falling 4 4.25 4.5 V

VCCoff UVLO VFB = 1.2 V

VDRAIN = 400 V 3.75 4 4.25 V

IqQuiescent current Not switching

VFB > VFB_REF

- 0.3 0.45 mA

Table 5. Power section (continued)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Electrical and thermal ratings VIPer11

8/35 DS11873 Rev 3

ICC

Operating supply current,

switching

VDS = 150 V

VCOMP = 1.2 V

FOSC = 30 kHz

-11.2

VDS = 150 V

VCOMP = 1.2 V

FOSC = 60 kHz

- 1.25 1.5

1. Current supplied during the main MOSFET OFF time only.

2. Parameter assured by design and characterization.

Table 7. Controller section

Symbol Parameter Test conditions Min. Typ. Max. Unit

E/A

VFB_REF Reference voltage - 1.175 1.2 1.225 V

VFB_DIS E/A disable voltage - 150 180 210 mV

IFB PULL UP Pull-up current - 0.9 1 1.1 µA

GMTransconductance VCOMP = 1.5 V

VFB > VFB_REF

350 500 650 µA/V

ICOMP1 Max. source current VCOMP = 1.5 V

VFB = 0.5 V 75 100 125 µA

ICOMP2 Max. sink current VFB = 2 V

VCOMP = 1.5 V 75 100 125 µA

RCOMP(DYN) Dynamic resistance VCOMP = 2.7 V

VFB = GND 55 65 75 kΩ

VCOMPH

Current limitation

threshold --3-V

VCOMPL PFM threshold - - 0.8 - V

OLP and timing

IDLIM Drain current limitation

TJ = 25 °C

VIPER114* 456 480 504

TJ = 25 °C

VIPER115* 560 590 620

I2f Power coefficient IDLIM_TYP2 x FOSC_TYPP 0.9 ·I2fI

2f 1.1 ·I2fA

2·kHz

IDLIM_PFM

Drain current limitation

at light load

TJ = 25 °C

VCOMP = VCOMPL(1)

VIPER114*

90 115 140

TJ = 25 °C

VCOMP = VCOMPL(1)

VIPER115*

105 130 155

Table 6. Supply section (continued)

Symbol Parameter Test conditions Min. Typ. Max. Unit

DS11873 Rev 3 9/35

VIPer11 Electrical and thermal ratings

VDISth

Disable threshold

voltage

VCC = 9 V

VCOMP = 1 V

VFB = VFB_REF

1.15 1.2 1.25 V

tDIS

Debounce time before

DIS protection tripping - 0.8 1 1.2 ms

tDIS_RESTART

Restart time after DIS

protection tripping - 400 500 600 ms

tOVL Overload delay time - 45 50 55 ms

tOVL_MAX

Max. overload delay

time

VIPER11*X

FOSC = FOSC MIN

90 100 110

VIPER11*L

FOSC = FOSC MIN

180 200 220

VIPER11*H

FOSC = FOSC MIN

360 400 440

tSS Soft-start time - 6 8 10 ms

tON_MIN Minimum turn-on time

VCC = 9 V

VCOMP = 1 V

VFB = VFB_REF

250 300 350 ns

tRESTART Restart time after fault - 0.8 1 1.2 s

Oscillator

FOSC Switching frequency

TJ = 25 °C

VIPER11*X 27 30 33

kHz

TJ = 25 °C

VIPER11*L 54 60 66

FOSC_MIN

Minimum switching

frequency TJ = 25 °C(2) 13.5 15 16.5 kHz

FDModulation depth (3) -±7

FOSC -%

FMModulation frequency (3) - 260 - Hz

DMAX Max. duty cycle (3) 70 80 %

Thermal shutdown

TSD

Thermal shutdown

temperature

(3) 150 160 °C

1. See Section 4.10: Pulse frequency modulation on page 19.

2. See Section 4.7: Pulse-skipping on page 18.

3. Parameter assured by design and characterization.

Table 7. Controller section (continued)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Typical electrical characteristics VIPer11

10/35 DS11873 Rev 3

3 Typical electrical characteristics

Figure 4. IDLIM vs TJ Figure 5. IFOSC vs TJ

Figure 6. VHV_START vs TJ Figure 7. VFB_REF vs TJ

Figure 8. Quiescent current Iq vs TJ Figure 9. Operating current ICC vs TJ

DS11873 Rev 3 11/35

VIPer11 Typical electrical characteristics

Figure 10. ICH1 vs TJ Figure 11. ICH1 vs VDRAIN

Figure 12. ICH2 vs TJ Figure 13. I

CH2 vs VDRAIN

Figure 14. ICH3 vs TJ Figure 15. I

CH3 vs VDRAIN

Typical electrical characteristics VIPer11

12/35 DS11873 Rev 3

Figure 16. GM vs TJ Figure 17. ICOMP vs TJ

Figure 18. RDS(on) vs TJ Figure 19. Static drain-source on-resistance

Figure 20. VBVDSS vs TJ Figure 21. Output characteristic

DS11873 Rev 3 13/35

VIPer11 Typical electrical characteristics

Figure 22. SOA SSOP10 package Figure 23. Maximum avalanche energy vs TJ

General description VIPer11

14/35 DS11873 Rev 3

4 General description

4.1 Block diagram

Figure 24. Block diagram

4.2 Typical power capability

Table 8. Typical power

Vin: 230 VAC Vin: 85-265 VAC

Adapter(1) Open frame(2) Adapter Open frame

10 W 12 W 6 W 7 W

1. Typical continuous power in non-ventilated enclosed adapter measured at 50 °C ambient.

2. Maximum practical continuous power in an open frame design at 50 °C ambient, with adequate heat-sinking.

DS11873 Rev 3 15/35

VIPer11 General description

4.3 Primary MOSFET

The primary switch is implemented with an avalanche-rugged N-channel MOSFET with

minimum breakdown voltage 800 V, VBVDSS, and maximum on-resistance of 20 Ω, RDS(on).

The sense-FET is embedded and it allows a virtually lossless current sensing. The

MOSFET is embedded and it allows the HV voltage start-up operation.

The MOSFET gate driver controls the gate current during both turn-on and turn-off in order

to minimize EMI. Under UVLO conditions the embedded pull-down circuit holds the gate low

in order to ensure that the MOSFET cannot be turned on accidentally.

4.4 High voltage startup

The embedded high voltage startup includes both the 800 V start-up FET, whose gate is

biased through the resistor RG

, and the switchable HV current source, delivering the current

IHV. The major portion of IHV, (ICH), charges the capacitor connected to VCC. A minor

portion is sunk by the controller block.

At startup, as the voltage across the DRAIN pin exceeds the VHV_START threshold, the HV

current source is turned on, charging linearly the CS capacitor. At the very beginning of the

startup, when Cs is fully discharged, the charging current is low, ICH1, in order to avoid IC

damaging in case VCC is accidentally shorted to GND. As VCC exceeds 1 V, ICH is increased

to ICH2 in order to speed up the charging of CS.

As VCC reaches the start-up threshold VCCon the chip starts operating, the primary MOSFET

is enabled to switch, the HV current source is disabled and the device is powered by the

energy stored in the CS capacitor.

In steady-state the IC can be supplied from the output (in case of non-isolated topologies) or

through an auxiliary winding (in case of isolated topologies), as shown in Figure 25.

Figure 25. IC supply modes

General description VIPer11

16/35 DS11873 Rev 3

In external supply the HV current source is always kept off by maintaining the VCC above

VCSon. In this case the residual consumption is given by the power dissipated on RG

calculated as follows:

Equation 1

At the nominal input voltage, 230 VAC, the typical consumption (RG = 34 MΩ) is 3.2 mW and

the worst-case consumption (RG = 28 MΩ) is 3.9 mW.

When the IC is disconnected from the mains, or there is a mains interruption, for some time

the converter keeps on working, powered by the energy stored in the input bulk capacitor.

When it is discharged below a critical value, the converter is no longer able to keep the

output voltage regulated. During the power down, when the DRAIN voltage becomes too

low, the HV current source (IHV) remains off and the IC is stopped as soon as the VCC drops

below the UVLO threshold, VCCoff.

Figure 26. Power-ON and power-OFF

PVIINDC

------------------=

DS11873 Rev 3 17/35

VIPer11 General description

4.5 Soft-start

The internal soft-start function of the device progressively increases the cycle-by-cycle

current limitation set point from zero up to IDLIM in 8 steps. The soft-start time, tSS, is

internally set at 8 ms. This function is activated at any attempt of converter startup and at

any restart after a fault event. The feature protects the system at the startup when the output

load occurs like a short-circuit and the converter works at its maximum drain current

limitation.

Figure 27. Soft startup

4.6 Oscillator

The IC embeds a fixed frequency oscillator with jittering feature. The switching frequency is

modulated by approximately ± 7% kHz FOSC at 260 Hz rate. The purpose of the jittering is to

get a spread-spectrum action that distributes the energy of each harmonic of the switching

frequency over a number of frequency bands, having the same energy on the whole but

smaller amplitudes. This helps to reduce the conducted emissions, especially when

measured with the average detection method or, which is the same, to pass the EMI tests

with an input filter of smaller size than that needed in absence of jittering feature.

Two options with different switching frequencies, FOSC, are available: 30 (X type) and

60 kHz (L type).



General description VIPer11

18/35 DS11873 Rev 3

4.7 Pulse-skipping

The IC embeds a pulse-skip circuit that operates in the following ways:

•Each time the DRAIN peak current exceeds IDLIM level within tON_MIN, the switching

cycle is skipped. The cycles can be skipped until the minimum switching frequency is

reached, FOSC_MIN (15 kHz).

•Each time the DRAIN peak current does not exceed IDLIM within tON_MIN, a switching

cycle is restored. The cycles can be restored until the nominal switching frequency is

reached, FOSC (30 or 60 kHz).

If the converter is operated at FOSC_MIN, the IC is turned off after the time tOVL_MAX (100 ms

or 200 ms or 400 ms typ., depending on FOSC) and then automatically restarted with soft-

start phase, after the time tRESTART (1 s, typ.).

The protection is intended to avoid the so called “flux-runaway” condition often present at

converter startup and due to the fact that the primary MOSFET, which is turned on by the

internal oscillator, cannot be turned off before than the minimum on-time.

During the on-time, the inductor is charged by the input voltage and if it cannot be

discharged by the same amount during the off-time, in every switching cycle there is an

increase of the average inductor current, that can reach dangerously high values until the

output capacitor is not charged enough to ensure the inductor discharge rate needed for the

volt-second balance. This condition may happen at converter startup, because of the low

output voltage.

In Figure 28 the effect of pulse-skipping feature on the DRAIN peak current shape is shown

(solid line), compared with the DRAIN peak current shape when pulse-skipping feature is

not implemented (dashed line).

Providing more time for cycle-by-cycle inductor discharge when needed, this feature is

effective by keeping low the maximum DRAIN peak current avoiding the flux-runaway

condition.

Figure 28. Pulse-skipping during startup

DS11873 Rev 3 19/35

VIPer11 General description

4.8 Direct feedback

The IC embeds a transconductance type error amplifier (E/A) whose inverting input, ground

reference and output are FB and COMP, respectively. The internal reference voltage of the

E/A is VFB_REF (1.2 V typical value referred to GND). In non-isolated topologies this tightly

regulates positive output voltages through a simple voltage divider applied to the output

voltage terminal, FB and GND.

The E/A output is scaled down and fed into the PWM comparator, where it is compared to

the voltage across the sense resistor in series to the sense-FET, thus setting the cycle-by-

cycle drain current limitation.

An R-C network connected on the output of the E/A (COMP) is usually used to stabilize the

overall control loop.

The FB is provided with an internal pull-up to prevent a wrong IC behavior when the pin is

accidentally left floating.

The E/A is disabled if the FB voltage is lower than VFB_DIS (200 mV, typ.).

4.9 Secondary feedback

When a secondary feedback is required, the internal E/A has to be disabled shorting FB to

GND (VFB < VFB_DIS). With this setting, COMP is internally connected to a pre-regulated

voltage through the pull-up resistor RCOMP(DYN) and the voltage across COMP is set by the

current sunk.

This allows the output voltage value to be set through an external error amplifier (TL431 or

similar) placed on the secondary side, whose error signal is used to set the DRAIN peak

current setpoint corresponding to the output power demand. If isolation is required, the error

signal must be transferred through an optocoupler, with the phototransistor collector

connected across COMP and GND.

4.10 Pulse frequency modulation

If the output load is decreased, the feedback loop reacts lowering the VCOMP voltage, which

reduces the DRAIN peak current setpoint, down to the minimum value of IDLIM_PFM when

the VCOMPL threshold is reached.

If the load is furtherly decreased, the DRAIN peak current value is maintained at IDLIM_PFM

and some PWM cycles are skipped. This kind of operation is referred to as “pulse frequency

modulation” (PFM), the number of the skipped cycles depends on the balance between the

output power demand and the power transferred from the input. The result is an equivalent

switching frequency which can go down to some hundreds Hz, thus reducing all the

frequency-related losses.

This kind of operation, together with the extremely low IC quiescent current, allows very low

input power consumption in no-load and light load, while the low DRAIN peak current

value, IDLIM_PFM, prevents any audible noise which could arise from low switching

frequency values. When the load is increased, VCOMP increases and PFM is exited. VCOMP

reaches its maximum at VCOMPH and corresponding to that value, the DRAIN current

limitation (IDLIM) is reached.

General description VIPer11

20/35 DS11873 Rev 3

4.11 Overload protection

To manage the overload condition, the IC embeds the following main blocks: the OCP

comparator to turn off the power MOSFET when the drain current reaches its limit (IDLIM) ,

the up and down OCP counter to define the turn-off delay time in case of continuous

overload (tOVL = 50 ms typ.) and the timer to define the restart time after protection tripping

(tRESTART = 1 s typ.).

In case of short-circuit or overload, the control level on the inverting input of the PWM

comparator is greater than the reference level fed into the inverting input of the OCP

comparator. As a result, the cycle-by-cycle turn-off of the power switch is triggered by the

OCP comparator instead of PWM comparator. Every cycle where this condition is met, the

OCP counter is incremented and if the fault condition lasts longer than tOVL (corresponding

to the counter end-of-count), the protection is tripped, the PWM is disabled for tRESTART

then it resumes switching with soft-start and, if the fault is still present, it is disabled again

after tOVL. The OLP management prevents IC from operating indefinitely at IDLIM and the

low repetition rate of the restart attempts of the converter avoids IC overheating in case of

repeated fault events.

After the fault removal, the IC resumes working normally. If the fault is removed earlier than

the protection tripping (before tOVL), the tOVL-counter is decremented on a cycle-by-cycle

basis down to zero and the protection is not tripped. If the fault is removed during tRESTART

the IC waits for the tRESTART period has elapsed before resuming switching.

In fault condition the VCC ranges between VCSon and VCCon levels, due to the periodical

activation of the HV current source recharging the VCC capacitor.

Figure 29. Short-circuit condition

DS11873 Rev 3 21/35

VIPer11 General description

4.12 Max. duty cycle counter protection

The IC embeds a max. duty cycle counter, which disables the PWM if the MOSFET is turned

off by max. duty cycle (70% min., 80% max.) for ten consecutive switching cycles. After

protection tripping, the PWM is stopped for tRESTART and then activated again with soft- start

phase until the fault condition is removed.

In some cases (i.e. breaking of the loop) even if VCOMP is saturated high, the OLP cannot be

triggered because at every switching cycle the PWM is turned off by maximum duty cycle

before than DRAIN peak current reaches the IDLIM setpoint. As a result, the output voltage

VOUT can increase without control by keeping a value much higher than the nominal one

with the risk for the output capacitor, the output diode and the IC itself. The max. duty cycle

counter protection avoids this kind of failures.

4.13 VCC clamp protection

This protection can occur when the IC is supplied by auxiliary winding or diode from the

output voltage, when an output overvoltage produces an increase of VCC.

If VCC reaches the clamp level VCCclamp (30 V, min. referred to GND) the current injected

into the pin is monitored and if it exceeds the internal threshold Iclamp_max (30 mA, typ.) for

more than tclamp_max (500 µs, typ.), the PWM is disabled for tRESTART (1 s, typ.) and then

activated again in soft-start phase. The protection is disabled during the soft-start time.

General description VIPer11

22/35 DS11873 Rev 3

4.14 Disable function

When the voltage across the pin is externally pulled above VDIS_th (1.2 V typ.) for more than

tDEB (for instance by a voltage divider connected to some higher voltages), the PWM is

disabled. If the voltage divider on the DIS pin is connected to the rectified mains, as shown

in Figure 30, an input overvoltage protection can be built.

Figure 30. Connection for input overvoltage protection (isolated or non-isolated

topologies)

In case of non-isolated topologies, by following the same principle an output overvoltage

protection can be built, as shown in Figure 31.

DS11873 Rev 3 23/35

VIPer11 General description

Figure 31. Connection for output overvoltage protection (non-isolated topologies)

If VOVP is the desired input/output overvoltage threshold, the resistors RH and RL of the

voltage divider are to be selected according to the following formula:

Equation 2

The power dissipation associated to the DIS network is:

Equation 3

in case of connection for the input overvoltage detection and

Equation 4

in case of connection for the output overvoltage detection.

General description VIPer11

24/35 DS11873 Rev 3

4.15 Auto-restart

When a fault occurs and a protection trips the PWM is disabled for tRESTART (1 s typ). During

this time interval, the HV generator is activated periodically, maintaining the VCC pin voltage

between VCSon and VCCon. The PWM is enabled at the first VCC recycle to VCCon after

TRESTART

, as shown in Figure 32. If the fault is still present, the protection is tripped in the

same way, otherwise normal operation is restored.

Figure 32. Protection timing diagram with auto-restart option

DS11873 Rev 3 25/35

VIPer11 General description

4.16 Thermal shutdown

If the junction temperature becomes higher than the internal threshold TSD (160 °C, typ.),

the PWM is disabled. After tRESTART time, a single switching cycle is performed, during

which the temperature sensor embedded in the power MOSFET section is checked. If a

junction temperature above TSD is still measured, the PWM is maintained disabled for

tRESTART time, otherwise it resumes switching with soft-start phase.

During tRESTART VCC is maintained between VCSon and VCCon levels by the HV current

source periodical activation. Such a behavior is summarized in below figure:

Figure 33. Thermal shutdown timing diagram

Application information VIPer11

26/35 DS11873 Rev 3

5 Application information

5.1 Typical schematics

Figure 34. Flyback converter (non-isolated)

Figure 35. Flyback converter with line OVP (non-isolated)

DS11873 Rev 3 27/35

VIPer11 Application information

Figure 36. Flyback converter (isolated)

Figure 37. Primary side regulation isolated flyback converter

Application information VIPer11

28/35 DS11873 Rev 3

Figure 38. Buck converter (positive output)

Figure 39. Buck-boost converter (negative output)

DS11873 Rev 3 29/35

VIPer11 Application information

5.2 Energy saving performance

The device allows designing applications to be compliant with the most stringent energy

saving regulations. In order to show the typical performance is achievable, the active mode

average efficiency and the efficiency at 10% of the rated output power of a 5 V/1.6 A non

isolated flyback and 5 V/360 mA buck converters adopting VIPer11, have been measured

and are reported in Table 9. In addition, no-load and light load consumptions are shown

from Figure 40 to Figure 43.

Table 9. Power supply efficiency, VOUT = 5 V

Parameter VIN 10 % output load

efficiency [%]

Active mode average

efficiency [%] Pin at no-load [mW]

Flyback non iso. 5 V/1.6 A

115 VAC 78.3 78.5 3.9

230 VAC 71.4 79.4 8.2

Buck 5 V/360 mA(1) 115 VAC 73.9 71.6 12.1

230 VAC 69.1 69.8 16.2

1. 5 mW bleeder connected at the output.

Figure 40. PIN versus VIN in no-load non

isolated flyback converter (5 V/1.6 A)

Figure 41. PIN versus VIN in light load non

isolated flyback converter (5 V/1.6 A)

Figure 42. PIN versus VIN in no-load non

isolated buck converter (5 V/360 mA)

Figure 43. PIN versus VIN in light load non

isolated buck converter (5 V/360 mA)

Application information VIPer11

30/35 DS11873 Rev 3

5.3 Layout guidelines and design recommendations

A proper printed circuit board layout ensures the correct operation of any switch-mode

converter and this is true for the VIPer as well. The main reasons to have a proper PCB

layout are:

•Providing clean signals to the IC, ensuring good immunity against external and

switching noises.

•Reducing the electromagnetic interferences, both radiated and conducted, to pass the

EMC tests more easily.

If the VIPer is used to design a SMPS, the following basic rules should be considered:

•Separating signal from power tracks. Generally, traces carrying signal currents

should run far from others carrying pulsed currents or with fast swinging voltages.

Signal ground traces should be connected to the IC signal ground, GND, using a single

“star point”, placed close to the IC. Power ground traces should be connected to the IC

power ground, GND. The compensation network should be connected to the COMP,

maintaining the trace to GND as short as possible. In case of two-layer PCB, it is a

good practice to route signal traces on one PCB side and power traces on the other

side.

•Filtering sensitive pins. Some crucial points of the circuit need or may need filtering.

A small high-frequency bypass capacitor to GND might be useful to get a clean bias

voltage for the signal part of the IC and protect the IC itself during EFT/ESD tests. A low

ESL ceramic capacitor (a few hundreds pF up to 0.1 μF) should be connected across

VCC and GND, placed as close as possible to the IC. With flyback topologies, when

the auxiliary winding is used, it is suggested to connect the VCC capacitor on the

auxiliary return and then to the main GND using a single track.

•Keeping power loops as confined as possible. The area circumscribed by current

loops where high pulsed current flow should be minimized to reduce its parasitic self-

inductance and the radiated electromagnetic field. As a consequence, the

electromagnetic interferences produced by the power supply during the switching are

highly reduced. In a flyback converter the most critical loops are: the one including the

input bulk capacitor, the power switch, the power transformer, the one including the

snubber, the one including the secondary winding, the output rectifier and the output

capacitor. In a buck converter the most critical loop is the one including the input bulk

capacitor, the power switch, the power inductor, the output capacitor and the free-

wheeling diode.

•Reducing line lengths. Any wire acts as an antenna. With the very short rise times

exhibited by EFT pulses, any antenna can receive high voltage spikes. By reducing line

lengths, the level of received radiated energy is reduced, and the resulting spikes from

electrostatic discharges are lower. This also keeps both resistive and inductive effects

to a minimum. In particular, all traces carrying high currents, especially if pulsed (tracks

of the power loops) should be as short and wide as possible.

•Optimizing track routing. As levels of pickup from static discharges are likely greater

near the edges of the board, it is wise to keep any sensitive lines away from these

areas. Input and output lines often need to reach the PCB edge at some stage, but they

can be routed away from the edge as soon as possible where applicable. Since vias

are to be considered inductive elements, it is recommended to minimize their number

in the signal path and avoid them in the power path.

•Improving thermal dissipation. An adequate copper area has to be provided under

the DRAIN pins as heatsink, while it is not recommended to place large copper areas

on the GND.

DS11873 Rev 3 31/35

VIPer11 Application information

Figure 44. Recommended routing for flyback converter

Figure 45. Recommended routing for buck converter



Package information VIPer11

32/35 DS11873 Rev 3

6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

6.1 SSOP10 package information

Figure 46. SSOP10 package outline

DS11873 Rev 3 33/35

VIPer11 Package information

Figure 47. SSOP10 recommended footprint

Table 10. SSOP10 package mechanical data

Symbol

Dimensions (mm)

Min. Typ. Max.

A- -1.75

A1 0.10 - 0.25

A2 1.25 - -

b 0.31 - 0.51

c 0.17 - 0.25

D 4.80 4.90 5

E 5.80 6 6.20

E1 3.80 3.90 4

e-1-

h 0.25 - 0.50

L 0.40 - 0.90

K0° - 8°

Ordering information VIPer11

34/35 DS11873 Rev 3

7 Ordering information

8 Revision history

Table 11. Order code

Order code IDLIM (OCP) FOSC ± jitter Package

VIPER115XSTR 590 mA 30 kHz ± 7%

SSOP10 tape and reelVIPER114LSTR 480 mA

60 kHz ± 7%

VIPER115LSTR 590 mA

Table 12. Document revision history

Date Revision Changes

11-Apr-2018 1 Initial release.

19-Apr-2018 2 Document status changed from preliminary to

production data.

14-Dec-2018 3 Updated Table 7, amended Section 4.15.

DS11873 Rev 3 35/35

VIPer11

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