SCR / SCR and SCR / DIODE
170A
230A
250A
MAGN-A-pakä Power Modules
IRK. SERIES
1
Bulletin I27102 rev. A 10/97
www.irf.com
Features
High voltage
Electrically isolated base plate
3000 VRMS isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are elec-
trically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can
be interconnected to form single phase or three phase
bridges or as AC-switches when modules are connected in
anti-parallel mode.
These modules are intended for general purpose applica-
tions such as battery chargers, welders and plating equip-
ment and where high voltage and high current are required
(motor drives, U.P.S., etc.).
Description
IT(AV) @ 85°C 170 230 250 A
IT(RMS) 377 510 555 A
ITSM @ 50Hz 5100 7500 8500 A
@ 60Hz 5350 7850 8900 A
I2t @ 50Hz 131 280 361 KA2s
@ 60Hz 119 256 330 KA2s
I2√t 1310 2800 3610 KA2√s
VDRM / VRRM Up to1600 Up to 2000 Up to1600 V
TJrange -40 to 130 oC
Parameters IRK.170.. IRK.230.. IRK.250.. Units
Major Ratings and Characteristics
IRK.170, .230, .250 Series
2
Bulletin I27102 rev. A 10/97
www.irf.com
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
IT(AV) Maximum average on-state current 170 230 250 A 180o conduction, half sine wave
@ Case temperature 85 85 85 oC
IT(RMS) Maximum RMS on -state current 377 510 555 A as AC switch
ITSM Maximum peak, one-cycle on-state, 5100 7500 8500 A t = 10ms No voltage
non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied
4300 6300 7150 t = 10ms 100% VRRM
4500 6600 7500 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 131 280 361 KA2s t = 10ms No voltage initial TJ = T J max
119 256 330 t = 8.3ms reapplied
92.5 198 255 t = 10ms 100% VRRM
84.4 181 233 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1310 2800 3610 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold voltage 0.89 1.03 0.97 V (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
VT(TO)2High level value of threshold voltage 1.12 1.07 1.00 (I > π x IT(AV)), TJ = TJ max.
rt1 Low level on-state slope resistance 1.34 0.77 0.60 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
rt2 High level on-state slope resistance 0.96 0.73 0.57 (I > π x IT(AV)), TJ = TJ max.
ITM = π x IT(AV), TJ = TJ max., 180o conduction
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
IHMaximum holding current 500 500 500 mA Anode supply=12V, initial IT=30A, TJ=25oC
ILMaximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1Ω
gate pulse: 10V, 100µs, T J = 25°C
Type number Voltage VRRMVDRM , maximum VRSM , maximum non-repetitive IRRM I DRM max
Code repetitive peak reverse and peak reverse voltage @ 130°C
off-state blocking voltage
VVm A
04 400 500 50
IRK.170- 08 800 900
IRK.250- 12 1200 1300
14 1400 1500
16 1600 1700
IRK.230- 08 800 900 50
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
tdTypical delay time 1.0 µsT
J = 25oC, Gate Current=1A dIg/dt=1A/µs
trTypical rise time 2.0 Vd = 0,67% VDRM
ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
Voltage Ratings
ELECTRICAL SPECIFICATIONS
On-state Conduction
Switching
tqTypical turn-off time 50 - 150 µs
VTM Maximum on-state voltage drop 1.60 1.59 1.44 V
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
IRK.170, .230, .250 Series
3
Bulletin I27102 rev. A 10/97
www.irf.com
IRRM Max. peak reverse and off-state 50 mA TJ =TJ max.
IDRM leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all termin. shorted, 25°C,1s
dv/dt Critical rate of rise of off-state voltage 1000 V/µsT
J = T J max, exponential to 67% rated VDRM
TJJunction operating temperature -40 to 130 oC
Tstg Storage temperature range -40 to 150 oC
RthJC Maximum thermal resistance
junction to case Mounting surface flat, smooth and greased
(per module)
T Mounting tourque ±10% A mounting compound is recommended and the
MAP to heatsink 4 to 6 Nm tourque should be rechecked after a period of
Busbar to MAP 4 to 6 Nm about 3 hours to allow for the spread of the
compound
wt Approximate weight 500 g
17.8 oz
Case style MAGN-A-pak
IPGM Maximum peak gate power 10.0 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Maximum average gate power 2.0 W f = 50Hz, TJ = TJ max.
+IGM Maximum peak gate current 3.0 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative gate voltage 5.0 V tp ≤ 5ms, TJ = TJ max.
VGT Maximum required DC gate 4.0 V TJ = - 40 oC Anode supply = 12V, resistive
voltage to trigger 3.0 V TJ = 25oC load ; Ra = 1Ω
2.0 V TJ = TJ max.
IGT Maximum required DC gate 350 mA TJ = - 40oC Anode supply = 12V, resistive
current to trigger 200 mA TJ = 25oC load ; Ra = 1Ω
100 mA TJ = TJ max.
VGD Maximum gate voltage
that will not trigger
IGD Maximum gate current
that will not trigger
di/dt Max rate of rise of
turned-on current
Blocking
Triggering
Thermal and Mechanical Specifications
0.25 V @ TJ= TJ max., rated VDRM applied
10.0 mA @ TJ= TJ max., rated VDRM applied
500 A/µs@ T
J= TJ max., I TM = 400 A rated V DRM applied
0.17 0.125 0.125 K/W Per junction, DC operation
RthC-S Thermal resistance, case to heatsink 0.02 0.02 0.02 K/W
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
IRK.170, .230, .250 Series
4
Bulletin I27102 rev. A 10/97
www.irf.com
Thyristor Diode IT(AV) / IF(AV) @ T C
VDRM VRSM VRRM 170A 230A 250A
VRRM VRSM @ 85°C @ 85°C @ 85°C
1400 1500 2000 IRKH170-14D20 IRKH230-14D20 IRKH250-14D20
1400 1500 2000 IRKL170-14D20 IRKL230-14D20 IRKL250-14D20
1600 1700 2500 IRKH170-16D25 IRKH230-16D25 IRKH250-16D25
1600 1700 2500 IRKL170-16D25 IRKL230-16D25 IRKL250-16D25
1800 1900 2800 Not Available IRKH230-18D28 Not Available
1800 1900 2800 Not Available IRKL230-18D28 Not Available
2000 2100 3200 Not Available IRKH230-20D32 Not Available
2000 2100 3200 Not Available IRKL230-20D32 Not Available
M
3 x IRK L...
3 x IR K H ...
3 x IRK T...
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as opposed
to Fast) Thyristors and Diodes.
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation inductances
and limited fault currents.
Their simple construction, illustrated by the circuit on the
left, is further enhanced by the use of MAGN-A-paks
which allow the power circuit of an Inverter to be realised
with 6 capacitors and 9 MAGN-A-paks all mounted on just
one heatsink.
The optimal design of Current Source Inverters requires
the use of Diodes with blocking voltages greater than
those of the thyristors .
This departure from conventional half-bridge modules is
catered for by MAGN-A-pak range with Thyristors up to
2000V and Diodes up to 3200V.
Current Source Inverters
Current Source Inverter using 9 MAGN-A-paks
MAGN-A-paks Suitable for Current Source Inverters
Application Notes
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
IRK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033
IRK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC)
IRK.170, .230, .250 Series
5
Bulletin I27102 rev. A 10/97
www.irf.com
IRK T 250 - 14 D20 N
1- Module type
2- Circuit configuration (See Outline Table)
3- Current rating
4- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
5- Current Source Inverters Types
6- None = Standard devices
7N = aluminum nitrade substrate
Ordering Information Table
Device Code
1345
62
IRKL... IRKU... IRKV... IRKK... IRKN...
IRKH...
IRKT...
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
Outline Table
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.170, .230, .250 Series
6
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
60
70
80
90
100
110
120
130
0 40 80 120 160 200
30°60° 90° 120° 180°
Average On-state Current (A)
Maximum Allow able Case Temperature (°C)
Conduction Angle
IRK.1 70.. Series
R (DC) = 0.17 K/W
thJC
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
DC
30°60°90°120°180°
Av era ge On- stat e Cu rrent (A)
Max imum Al lowable Case T em perat ure ( °C)
C ondu ction Period
IRK.170.. Ser ies
R (DC) = 0.17 K/W
thJC
0
50
100
150
200
250
300
0 40 80 120 160 200
RMS Limit
Con d uction Ang le
Maxim um Aver age On-state Po wer Loss (W)
Ave r age On - s ta te Cu r re nt (A )
180°
120°
90°
60°
30°
IRK.170.. Se ries
Per Junction
T = 125°C
J
0
50
100
150
200
250
300
350
0 50 100 150 200 250 300
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maxi mum Aver age On-st a te Power Lo ss (W)
Average On-state Current (A)
IRK.1 70.. series
Per Junction
T = 125°C
J
2000
2500
3000
3500
4000
4500
5000
110100
Number Of Equal Ampl itude Half Cycle Current Pulses (N)
At A ny Rated Load Co ndition And With
Rate d V Applied Follo wing Surge.
Peak Half Sine Wave On- state Current (A)
IRK.170.. Series
Per Junction
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM J
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Pe ak Half Si ne W a ve O n-st ate C urrent ( A)
P ulse T rain Duratio n (s)
Maximum Non R epetit ive Surge Current
Versus Pulse Train Duration. Co ntrol
Of C ondu ction M ay Not Be M ain tai n ed.
Initial T = 130°C
No Vo lt age Reappl ied
Rat ed V Reapplied
RRM
J
IRK.170.. Series
Per Jun ction
IRK.170, .230, .250 Series
7
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 7 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 9 - On-state Power Loss Characteristics
0 20406080100120
0.35 K/W
0.3 K/W
0.25 K/W
0.2 K/W
0.08 K/W
0.12 K/W
0.16 K/W
Maximum A llowable Am bient Temperature ( °C)
R = 0.04 K/W - Delta R
thSA
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350 400
180°
120°
90°
60°
30°
Ma ximu m Total O n-st ate Powe r Loss (W)
T otal RMS Outp u t Cu r r ent (A)
Conduction An gle
IR K .170.. Series
Per Modu le
T = 130°C
J
0 20406080100120
Maximum Allowable Ambien t Temperat ure (°C)
R = 0.02 K/W - Delta R
0.04 K/W
thSA
0.06 K/W
0.08 K/W
0.1 K/W
0.12 K/W
0.16 K/W
0.2 K/W
0.25 K/W
0.35 K/W
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IR K.170. . Se rie s
Si n gl e Phas e Brid g e
Connected
T = 130°C
J
0 20406080100120
Maximum Allowable Ambient Temperature ( °C)
0.25 K/W
0.16 K/W
0.12 K/W
0.1 K/W
0.08 K/W
0.05 K/W
0.03 K/W
R = 0.01 K/W - Delta R
thSA
0
200
400
600
800
1000
1200
1400
1600
0 100 200 300 400 500
Total Ou tp u t Cu r r en t (A )
Max imum Total Powe r Loss (W )
120°
(Rect)
3 x IR K.170. . Se r ies
Three Phase Bridge
Connected
T = 130°C
J
IRK.170, .230, .250 Series
8
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics
Fig. 12 - On-state Power Loss Characteristics Fig. 13 - On-state Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
60
70
80
90
100
110
120
130
0 40 80 120 160 200 240
30°60° 90°
120° 180°
Aver age On-s tate C urr en t (A)
Max imum Allowable C ase Temperat ure (°C)
Co nd u ction Ang le
IRK.230.. Series
R (DC) = 0.125 K/W
thJC
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
DC
30°60° 90°120°180°
Ave ra ge On-st ate Current (A)
Maximum Allowable Case Temperature (°C)
Con duc tion Per iod
IRK.230.. Series
R (DC) = 0.125 K/W
thJC
0
50
100
150
200
250
300
350
0 50 100 150 200 250
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On- state Current (A)
180°
120°
90°
60°
30°
IRK.230.. Series
Per Junction
T = 130°C
J
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150 200 250 300 350 400
DC
180°
120°
90°
60°
30°
RMS Limit
Con d u ction Perio d
Max imum Averag e On-state Po wer Loss (W)
Average On-state Current (A)
IRK.230.. Series
Per Junction
T = 130°C
J
3000
3500
4000
4500
5000
5500
6000
6500
7000
110100
Number Of Equal Ampl itude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rat ed V Applied Following Surge.
Peak Half Sine Wave On-state Current (A)
IRK.230.. Series
Per Junction
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM J
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
0.01 0.1 1
Peak Half Sine Wave On-s tate Current (A)
Puls e T rain Dur ation (s)
Maximum Non R e p e t it ive Surge Current
Versus Pulse Train D ura tion. Control
Of C ond u ction Ma y N ot Be Ma intained.
Initial T = 130°C
No Volta ge Rea pplied
Rat ed V Reapplied
RRM
J
IRK.230.. Series
Per Jun ction
IRK.170, .230, .250 Series
9
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 16 - On-state Power Loss Characteristics
Fig. 17 - On-state Power Loss Characteristics
Fig. 18 - On-state Power Loss Characteristics
0 20406080100120
Maxim um Allowable Ambie nt T e mperature ( °C)
R = 0.01 K/W - Delta R
thSA
0.03 K/W
0.06 K/W
0.12 K/W
0.08 K/W
0.1 K/W
0.16 K/W
0.2 K/W
0.25 K/W
0.3 K/W
0
100
200
300
400
500
600
700
0 100 200 300 400 500
Total RMS O utput Current (A)
Ma x imu m Total On-state P ow er L os s (W)
IR K. 230.. Ser ies
Per Module
T = 130° C
180°
120°
90°
60°
30°
J
Con duction angle
0 20406080100120
Maximum Allowable Ambien t Temperature (°C)
0.03 K/W
0.05 K/W
0.08 K/W
0.1 K/W
0.16 K/W
0.2 K/W
1.5 K/W
R = 0.01 K/W - Delta R
thSA
0
150
300
450
600
750
900
1050
1200
1350
1500
0 50 100 150 200 250 300 350 400 450
180°
(Sine)
180°
(Rect)
2 x I R K. 2 3 0.. Ser ies
Single Phase Bridge
Connected
T = 130°C
M aximum Total Powe r Loss (W)
Total Output Current (A)
J
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
0.01K/W
0.02K/W
0.03K/W
0.04K/W
0.05K/W
0.06K/W
0.08K/W
0.1K/W
0.12K/W
0.16K/W
0.25K/W
R = 0.005K/W - Delta R
thSA
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 100 200 300 400 500 600
Maximum Total Power Loss (W)
Total Output Current (A)
120°
(Rect)
3 x IR K.230. . Se ries
Three Phase Bridge
Connected
T = 130°C
J
IRK.170, .230, .250 Series
10
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 19 - Current Ratings Chartacteristics Fig. 20 - Current Ratings Chartacteristics
Fig. 21 - On-state Power Loss Characteristics Fig. 22 - On-state Power Loss Characteristics
Fig. 23 - Maximum Non-Repetitive Surge Current Fig. 24 - Maximum Non-Repetitive Surge Current
0
50
100
150
200
250
300
350
0 50 100 150 200 250
RMS Limit
Conduction Angle
Maximum Average On-stat e Power Loss (W)
Average On -state Current (A)
180°
120°
90°
60°
30°
IRK.250.. Series
Per Junction
T = 130°C
J
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150 200 250 300 350 400
DC
180°
120°
90°
60°
30°
RMS Limit
Con d u ction Per io d
Max imum Ave rage On-state Power Loss (W)
Average On-state Current (A)
IRK.2 50.. Series
Per Jun ction
T = 130°C
J
3500
4000
4500
5000
5500
6000
6500
7000
7500
110100
Number Of Equal Ampli tude Half Cycle Current Pu lses (N)
Peak Half Sine Wave On-state Current (A )
IRK.250.. Series
Per Junction
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
I nitial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
60
70
80
90
100
110
120
130
0 100 200 300 400 500
DC
30°60°90°
120°180°
Av er ag e On- s ta te Cur ren t (A)
Maxim u m A l lowable Ca s e Temp er atu r e ( °C)
Co nd u ction Per io d
IRK.250.. Series
R (DC) = 0.125 K/W
thJC
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30°60° 90° 120° 180°
Ave r a ge On -s tate Cu rr en t ( A)
Maxim u m A l lowa ble Ca s e Te mp e r a tu r e ( °C)
Co ndu ctio n An gle
IRK.250.. Series
R (DC) = 0.125 K/W
thJC
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Peak Half Sine Wave On-s tate Current (A )
Pu ls e T r ain Dur ation (s)
Maximum Non R epetiti ve S urge Current
Ve rsu s Pulse Trai n Duratio n. Co nt ro l
Of C ond u ction Ma y Not B e Maintaine d .
IRK.250.. Series
Per Junction
Initial T = 130°C
No Vol tage Reapplied
Rat ed V Reapplied
RRM
J
IRK.170, .230, .250 Series
11
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 25 - On-state Power Loss Characteristics
Fig. 26 - On-state Power Loss Characteristics
Fig.27 - On-state Power Loss Characteristics
0 20406080100120
Maximum Allowable Ambient Tempe rature (°C)
R = 0.01 K/W - Delta R
thSA
0.02 K/W
0.03 K/W
0.04 K/W
0.05 K/W
0.06 K/W
0.1 K/W
0.12 K/W
0.16 K/W
0.3 K/W
0
200
400
600
800
1000
1200
1400
0
100 200 300 400 500
Maximum Total Power Loss ( W)
T otal Output Current (A)
180°
(Sine)
180°
(Rect)
2 x IRK.250.. Series
Si n gl e Phas e Brid g e
Connected
T = 130°C
J
0 20406080100120
Maximum Allowable Ambient Tempe r atur e (°C)
0.3 K/W
0.25 K/W
0.20 K/W
0.16 K/W
0.12 K/W
0.08 K/W
0.05 K/W
R = 0.02 K/W - Delta R
thSA
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
Ma ximum Total On-state Power L oss (W)
C onduc tion angle
Total RMS Output C urr e nt (A )
IR K.250.. Ser ies
Pe r Modul e
T = 130°C
J
0 20406080100120
Maximum Allowable Ambient Tempe rature (°C)
R = 0.01 K/W - Delta R
0.03 K/W
0.04 K/W
0.05 K/W
0.06 K/W
0.08 K/W
0.1 K/W
0.12 K/W
0.16 K/W
0.20 K/W
0.25 K/W
thSA
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100 200 300 400 500 600 700
Maximu m Total Power Loss (W)
Total Output Current (A)
120°
(Rect)
3 x I R K .25 0.. Ser i e s
T hree Phas e Brid ge
Connected
T = 130°C
J
IRK.170, .230, .250 Series
12
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 28 - On-state Voltage Drop Characteristics Fig. 29 - On-state Voltage Drop Characteristics
Fig. 30 - On-state Voltage Drop Characteristics
Fig. 31 - Reverse Recovery Charge Characteristics Fig. 32 - Reverse Recovery Charge Characteristics
100
1000
10000
0.511.522.533.544.55
T = 25°C
J
Insta n tan e o u s O n- state Cu rre n t (A )
Instantaneous On-state Voltage (V)
T = 130°C
J
IRK.250.. Seri es
Per Junction
10
100
1000
10000
0.511.522.533.544.55
T = 25°C
J
Instantaneous On-state Curre nt (A)
Ins t an ta n eou s O n- s ta te Voltag e (V )
IRK.170.. Series
Per Junction
T = 125°C
J
100
1000
10000
0.511.522.533.544.55
T = 25 °C
J
Instantaneous On-s tate Current (A)
In s ta n ta ne ous On - s ta te Volta ge (V)
T = 130°C
J
IRK.230.. Series
Per Junction
200
400
600
800
1000
1200
1400
1600
1800
0 102030405060708090100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Typical Reverse Recovery Charge - Qrr (µC)
I = 800 A
TM
50 0 A
300 A
20 0 A
10 0 A
IR K.170.. Ser ies
T = 130 °C
Per Junction
J
50 A
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 102030405060708090100
Typical Reverse Recovery Charge - Qrr (µC)
R a te Of Fall Of On-s tate Cu rrent - di/dt ( A/µs)
500 A
300 A
2 00 A
10 0 A
IRK.230/ 250.. Series
T = 130 °C
Per Junction
JI = 800 A
TM
50 A
IRK.170, .230, .250 Series
13
Bulletin I27102 rev. A 10/97
www.irf.com
Fig. 33 - Gate Characteristics
Fig. 34 - Thermal Impedance ZthJC Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b) (a)
Tj=25 °C
Tj=125 °C
Tj= -40 °C
(2) (3)
Inst an taneous Gate Cur rent (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommen ded load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Rec tan gular gate pulse
<=30% ra ted di/dt : 10V, 20ohms
(1) PGM = 10W , tp = 4ms
(2) PGM = 20W , tp = 2ms
(3) PGM = 40W , tp = 1ms
(4) PGM = 60W , tp = 0.66ms
IRK .170/ 230/ 250 Serie s Freq uency Lim ited by P G( AV)
(1) (4)
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
IRK.170.. Ser i es
Steady State Value:
R = 0.1 7 K/W
R = 0.1 25 K/W
(DC Operation)
thJC
thJC
Tra n sient Ther m al Im p e d an ce Z (K/ W)
I RK .230/ 250.. Series
