ZVN2110G SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 ✪
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
PARTMARKIN G DETAIL - ZVN2110
COMPLEMENTA RY TYPE - ZVP2110G
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuous D rain Current at Tamb=25°C ID500 mA
Pulsed Drain Current IDM 6A
Gate Sour ce Voltage VGS ± 20 V
Power Dissipa tion at Tamb=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown V oltage BVDSS 100 V ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS
Gate-Bo dy Leakage IGSS 0.1 20 nA VGS=± 20V, V DS=0V
Zero Gate Vol tage Drai n Current IDSS 1
100 µA
µAVDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 1.5 2AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 4ΩVGS=10V, ID=1A
Forward Transconductance (1)( 2) gfs 250 350 mS VDS=25V, ID=1A
Input Capacitance (2) Ciss 59 75 pF
Common Source Output
Capacitan ce (2) Coss 16 25 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss 48pF
Turn-On Delay Time (2)(3) td(on) 47ns
VDD ≈25V, ID=1A
Rise Time (2)(3) tr48ns
Turn-Off Delay Time (2)( 3) td(off) 813 ns
Fall Time (2) (3) tf813 ns
DRAIN-SOURC E DIODE CHAR ACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Forward Voltage (1) VSD 0.82 VI
S=0.3 2A, VGS=0
Reverse Recovery Time TRR 112 ns IF=0.32A, VGS=0, IR=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN2110G
D
D
S
G
TYPICA L CHA R ACTERISTICS
Output Characteristics
V
DS
- Drain Source Voltage (Volts )
T ransfer Characteristics
246810
020406080100
Saturation Characteristics
V
DS-
Drain Sourc e
Voltage (Volts)
Vo ltag e Sa turation Characteristics
V
GS-
Gate Source Voltage
(Volts) V
GS-
Gate Source Voltage (Volts)
V
DS
- Drain Source Voltage (Volts)
0246810
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
I
D(on)
-On-State Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
0246810
I
D=
1A
500mA
100mA
I
D(on)
-On-State Drain Current (Amps)
I
D(on)
-On-State Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Tem perature (°C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
I
D=
1 A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
180
0
0.8
0.4
1.2
2.0
1.6 8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
V
GS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
V
GS-
Gate Source Voltage
(Volts)
RDS(on)-Drain Source Resistance
(Ω)
110 100
500mA
I
D
=
1A
100mA
1
10
5
V
GS=
10V
3V
10V
V
DS=
25V
3 - 388 3 - 387
ZVN2110G SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 ✪
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
PARTMARKIN G DETAIL - ZVN2110
COMPLEMENTA RY TYPE - ZVP2110G
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuous D rain Current at Tamb=25°C ID500 mA
Pulsed Drain Current IDM 6A
Gate Sour ce Voltage VGS ± 20 V
Power Dissipa tion at Tamb=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown V oltage BVDSS 100 V ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS
Gate-Bo dy Leakage IGSS 0.1 20 nA VGS=± 20V, V DS=0V
Zero Gate Vol tage Drai n Current IDSS 1
100 µA
µAVDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 1.5 2AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 4ΩVGS=10V, ID=1A
Forward Transconductance (1)( 2) gfs 250 350 mS VDS=25V, ID=1A
Input Capacitance (2) Ciss 59 75 pF
Common Source Output
Capacitan ce (2) Coss 16 25 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss 48pF
Turn-On Delay Time (2)(3) td(on) 47ns
VDD ≈25V, ID=1A
Rise Time (2)(3) tr48ns
Turn-Off Delay Time (2)( 3) td(off) 813 ns
Fall Time (2) (3) tf813 ns
DRAIN-SOURC E DIODE CHAR ACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Forward Voltage (1) VSD 0.82 VI
S=0.3 2A, VGS=0
Reverse Recovery Time TRR 112 ns IF=0.32A, VGS=0, IR=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN2110G
D
D
S
G
TYPICA L CHA R ACTERISTICS
Output Characteristics
V
DS
- Drain Source Voltage (Volts )
T ransfer Characteristics
246810
020406080100
Saturation Characteristics
V
DS-
Drain Sourc e
Voltage (Volts)
Vo ltag e Sa turation Characteristics
V
GS-
Gate Source Voltage
(Volts) V
GS-
Gate Source Voltage (Volts)
V
DS
- Drain Source Voltage (Volts)
0246810
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
I
D(on)
-On-State Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
0246810
I
D=
1A
500mA
100mA
I
D(on)
-On-State Drain Current (Amps)
I
D(on)
-On-State Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Tem perature (°C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
I
D=
1 A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
180
0
0.8
0.4
1.2
2.0
1.6 8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
V
GS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
V
GS-
Gate Source Voltage
(Volts)
RDS(on)-Drain Source Resistance
(Ω)
110 100
500mA
I
D
=
1A
100mA
1
10
5
V
GS=
10V
3V
10V
V
DS=
25V
3 - 388 3 - 387
ZVN2110G
TYPICAL CHARACTERISTICS
T ransconductance v drain current
I
D(on)
- Drain Current (Amps)
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
Q-Charge (nC)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
20V
I
D=
1A
50V
80V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0 0.2 0.4 0.6 0.8 1.0
V
DS=
25V
0
100
200
400
300
500
0246810
V
DS=
25V
0
300
200
100
400
500
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
C
oss
C
iss
C
rss
010 20 30 40 50
60
40
20
80
100
3 - 389
