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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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December 2013
FCD7N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
1
FCD7N60
N-Channel SuperFET® MOSFET
600 V, 7 A, 600 mΩ
Features
•650 V @ T
J = 150°C
•Typ. R
DS(on) = 530 mΩ
• Ultra Low Gate Charge (Typ. Qg = 23 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF)
• 100% Avalanche Tested
•RoHS Compliant
Application
• LCD / LED TV and Monitor
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
D-PAK
G
S
D
G
S
D
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FCD7N60TM /
FCD7N60TM_WS Unit
VDSS Drain to Source Voltage 600 V
IDDrain Current - Continuous (TC = 25oC) 7 A
- Continuous (TC = 100oC) 4.4
IDM Drain Current - Pulsed (Note 1) 21 A
VGSS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ
IAR Avalanche Current (Note 1) 7A
EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
PDPower Dissipation (TC = 25oC) 83 W
- Derate Above 25oC0.67W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FCD7N60TM /
FCD7N60TM_WS Unit
RθJC Thermal Resistance, Junction to Case, Max. 1.5 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 83
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
2
FCD7N60 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCD7N60TM FCD7N60 D-PAK Tape and Reel 330 mm 16 mm 2500 units
FCD7N60TM_WS FCD7N60 D-PAK Tape and Reel 330 mm 16 mm 2500 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TC = 25oC 600 - - V
VGS = 0 V, ID = 250 μA, TC = 150oC- 650 - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25oC-0.6-V/
oC
BVDS
Drain to Source Avalanche Breakdown
Voltage VGS = 0 V, ID = 7.0 A - 700 - V
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, TC = 125oC--10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3.5 A - 0.53 0.6 Ω
gFS Forward Transconductance VDS = 40 V, ID = 3.5 A -6-S
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1 MHz
- 710 920 pF
Coss Output Capacitance - 380 500 pF
Crss Reverse Transfer Capacitance - 34 - pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 22 29 pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 60 - pF
td(on) Turn-On Delay Time
VDD = 300 V, ID = 7.0 A,
VGS = 10 V , RG = 25 Ω
(Note 4)
-3580ns
trTurn-On Rise Time - 55 120 ns
td(off) Turn-Off Delay Time - 75 160 ns
tfTurn-Off Fall Time - 32 75 ns
Qg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 7.0 A,
VGS = 10 V
(Note 4)
-2330nC
Qgs Gate to Source Gate Charge - 4.2 5.5 nC
Qgd Gate to Drain “Miller” Charge - 11.5 - nC
ISMaximum Continuous Drain to Source Diode Forward Current - - 7 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 21 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 7.0 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 7.0 A,
dIF/dt = 100 A/μs
- 360 - ns
Qrr Reverse Recovery Charge - 4.5 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 3.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
3
FCD7N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
※ Note
1. VDS = 40V
2. 250μs Pulse Test
-55℃
150℃
25℃
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
0 5 10 15 20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS = 20V
VGS = 10V
※ Note : TJ = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10-1
100
101
25℃
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
10-1 100101
0
1000
2000
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
※ Note : ID = 7A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
4
FCD7N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID = 3.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102Operation in This Area
is Limited by R DS(on)
DC
10 ms
1 ms
100 us
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
2.5
5.0
7.5
10.0
ID, Drain Current [A]
TC, Case Temperature [ ]℃
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
1. ZθJC
(t) = 1.5 /W Max.℃
2. Duty Factor, D =t1/t2
3. TJM - TC = PDM * ZθJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t1
PDM
t2
Z
θ
JC(t), Thermal Response [oC/W]
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
5
FCD7N60 — N-Channel SuperFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
6
FCD7N60 — N-Channel SuperFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
7
FCD7N60 — N-Channel SuperFET® MOSFET
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
©2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
www.fairchildsemi.com
8
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Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
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®*
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®
™
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Rev. I66
tm
®
FCD7N60 — N-Channel SuperFET® MOSFET
www.onsemi.com
1
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