Thyristor Modules Thyristor/Diode Modules PSKT 162 PSKH 162 ITRMS ITAVM VRRM = 2x 300 A = 2x 190 A = 800-1800 V Preliminary Data Sheet VRSM VRRM Type VDSM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 1 Version 1 Version 1 PSKT PSKT PSKT PSKT PSKT PSKH 162/08io1 PSKH 162/12io1 PSKH 162/14io1 PSKH 162/16io1 PSKH 162/18io1 162/08io1 162/12io1 162/14io1 162/16io1 162/18io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 80C; 180 sine TC = 85C; 180 sine ITSM, IFSM TVJ = 45C; VR = 0 i2dt (di/dt)cr Maximum Ratings 300 190 181 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6000 6400 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5250 5600 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 180 000 170 000 A 2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 137 000 128 000 A2 s A2 s TVJ = TVJM repetitive, IT = 500 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A diG/dt = 0.5 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM A/s 1000 V/s PGAV VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ Mounting torque (M6) Terminal connection torque (M6) Weight Typical including screws 4 3 6 7 1 5 4 2 3 1 5 42 International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 g Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Advantages Md 5 Applications W W W t = 1 min t=1s 7 Features 500 6 PSKH A/s 120 60 8 50/60 Hz, RMS IISOL 1 mA tP = 30 s tP = 500 s 150 3 PSKT (dv/dt)cr VISOL 2 Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 300 A; TVJ = 25C 1.25 V VT0 rT For power-loss calculations only (TVJ = 125C) 0.88 1.15 V m VGT VD = 6 V; IGT VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2.5 2.6 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.2 10 V mA IL TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.5 A; diG/dt = 0.5 A/s 300 mA IH TVJ = 25C; VD = 6 V; RGK = 200 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.5 A; diG/dt = 0.5 A/s 2 s tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/s typ. VR = 100 V; dv/dt = 20 V/s; VD = 2/3 VDRM 150 s QS IRM TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/s 550 235 C A RthJC per per per per RthJK dS dA a Characteristic Values 10 mA Fig. 1 Gate trigger characteristics thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration 0.155 0.0775 0.225 0.1125 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT Version 1 PSKH Version 1 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x PSKT 162 or 3 x PSKH 162 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3 x PSKT 162 or 3 x PSKH 162 Z thJC(t) Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.155 0.167 0.176 0.197 0.227 Constants for ZthJC calculation: i 1 2 3 ZthJK(t) Rthi (K/W) ti (s) 0.0072 0.0188 0.129 0.001 0.08 0.2 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.225 0.237 0.246 0.267 0.297 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.0072 0.0188 0.129 0.07 0.001 0.08 0.2 1.0 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20