HL6504FM
Visible High Power Laser Diode for DVD-RAM
ADE-208-825A (Z)
2nd Edition
Dec. 2000
Description
The HL6504FM is a 0.66 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure.
It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM, and various
other types of optical equipment.
Hermetic sealing of the small package (φ 5.6 mm) assures high reliability.
Application
Optical disc memories
Optical equipment
Features
High output power : 50 mW (CW)
Visible light output : λp = 664 nm Typ
Small package : φ 5.6 mm
Low astigmatism : 5 µm Typ (PO = 5 mW)
LD
13
Internal CircuitPackage Type
HL6504FM: FM
2
HL6504FM
2
Absolute Maximum Ratings (TC = 25°C)
Item Symbol Value Unit
Optical output power PO50 mW
Pulse optical output power PO(pulse) 70 * mW
Laser diode reverse voltage VR(LD) 2V
Operating temperature Topr 10 to +60 °C
Storage temperature Tstg 40 to +85 °C
Note: Pulse condition : Pulse width = 100 ns, duty = 50%
Optical and Electrical Characteristics (TC = 25°C)
Items Symbol Min Typ Max Unit Test Conditions
Optical output power PO50 mW Kink free *
Pulse optical output power PO(pulse) 70 mW Kink free *
Threshold current Ith 30 45 60 mA
Operating current Iop 115 135 mA PO = 50 mW
Operating voltage VOP 2.1 2.6 3.0 V PO = 50 mW
Beam divergence
parallel to the junction θ// 7 8.5 11 deg. PO = 50 mW
Beam divergence
parpendicular to the junction θ⊥ 18 21 26 deg. PO = 50 mW
Asitgmatism AS—5 µmP
O = 5 mW, NA = 0.55
Lasing wavelength λp 655 664 667 nm PO = 50 mW
Note: Kink free is confirmed at the temperature of 25°C.
HL6504FM
3
Typical Characteristic Curves
0 2001601208040
50
40
30
Optical output power, PO (mW)
20
10
0
Forward current, IF (mA)
Optical Output Power vs. Forward Current
Slope efficiency, ηS (mW/mA)
Case temperature, TC (°C)
Slope Efficiency vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
00 1020304050607080
TC = 60°C
TC = 25°C
TC = 0°C
Threshold current, Ith (mA)
Case temperature, TC (°C)
Threshold Current vs. Case Temperature
80706050403020100
100
10
30
50
0 2001601208040
80
60
40
Optical output power, PO (mW)
20
0
Forward current, IF (mA)
Pulse Optical Output Power vs. Forward Current
TC = 60°C
TC = 25°C
TC = 0°C
TC = 25°C
pw = 100 ns
duty = 50%
HL6504FM
4
Typical Characteristic Curves (cont)
Lasing Wavelength, λp (nm)
Case temperature, TC (°C)
Wavelength vs. Case Temperature
655 665660
Relative intensity
Wavelength, λp (nm)
Lasing Spectrum
TC = 25°C
0 1020304050607080
675
670
665
660
655
650
PO = 50 mW
PO = 50 mW
PO = 35 mW
PO = 10 mW
PO = 5 mW
Relative intensity
Angle, θ (deg.)
Far Field Pattern
40 100 1020302030 40
1.0
0.8
0.6
0.4
0.2
0
PO = 50 mW
TC = 25°C
Astigmatism, AS (µm)
Optical output power, PO (mW)
Astigmatism vs. Optical Output Power
05040302010
10
6
4
2
0
TC = 25°C
NA = 0.55
8
Perpendicular
Parallel
HL6504FM
5
Typical Characteristic Curves (cont)
Gain (dB)
Frequency (Hz)
Frequency Response
1M 100M 3G10M
3 dB/div
1G 01
100
80
60
Survival rate (%)
40
20
0
Applied voltage (kV)
Electrostatic Destruction (MIL standard)
Forward
N = 5 pcs
Iop 10%
23
PO = 3 mW
HL6504FM
6
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LD/FM
0.3 g
Unit: mm
1
2
3
5.6 +0
–0.025
φ
1.0 ± 0.1
(0.4)
(90°)
1.6 ± 0.2
φ
0.4 +0.1
–0
φ
φ4.1 ± 0.3
3.55 ± 0.1
0.25
Glass
1.27
φ
3 – 0.45 ± 0.1
6.5 ± 1.0
1.2 ± 0.1 2.3 ± 0.2
φ
123
2.0 ± 0.2
Emitting Point
HL6504FM
7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
HL6504FM
8
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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