2–18 Alpha Industries
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Features
Silicon Step Recovery Diodes for High Order
Frequency Band Multiplication
Fast transition times for output frequencies to
18 GHz
Available as chips or packaged diodes
Maximum Ratings
Reverse Voltage, VR:
Operating Temperature:
Storage Temperature:
VBR rating
– 55 to 150°C
– 65 to 200°C
Electrical Characteristics (TA = 25
°
C)
Step Recovery Diode Chips
Part
VBR
@10µA
IR (80% of
Rated VBR)
CJ
@
–
6V
TL1TT1FC
@ –6V
Typical
Inp t
Typical
Otpt
Outline
Di
P
art
Number
@
10
µA
(V)
Rated
V
BR
)
(nA)
@
–
6V
(pF)
L
(ns)
T
(ps)
@
–
6V
(GHz)
I
npu
t
Frequenc
y
O
u
tp
u
t
Frequency
(GH )
Drawing
N
u
m
be
r
Number
Max. Max. Min. Max. Min. Max. Min.
qy
(GHz) (GHz)
Number
CVB1151–000 15 100 0.25 0.5 10 70 300 0.5–3.0 9–18 150–806
CVB1152–000 15 100 0.5 1.0 10 70 300 0.5–3.0 9–18 150–801
CVB1153–000 15 100 1.0 1.5 10 70 300 0.5–3.0 9–18 150–801
CVB1031–000 30 100 0.25 0.5 10 100 300 0.5–3.0 5–15 150–801
CVB1032–000 30 100 0.5 1.0 10 100 300 0.5–3.0 5–15 150–801
CVB1033–000 30 100 1.0 1.5 10 100 300 0.5–3.0 5–15 150–801
1. Test conditions for carrier lifetime (TL) are IF = 10 mA and IR = 6 mA. Test conditions for transition time (TT) are VR = 10V and IF = 10 mA.
METALIZED
SILICON
GOLD DOT
150–801 .002 (min) .010 .014
Chip
Style Bonding Pad
Nominal (In.) Min. Max.
Chip Size (In.)
MET ALIZED BACK
CONT ACT GOLD
150–806 .010 .014
.0011 (min)
.004 – .006”
Outline Dimensions
Step Recovery Diodes
CVB1151 to CVB1153, CVB1031 to CVB1033
2
2–19
Alpha Industries
• •
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•
E-mail
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Visit our web site:
Ordering Information
The following packages are also available. To order
a part in a different package just replace the dash
number with a package style listed below. For
example, CVB1151–000 becomes CVB1151–210.
Available Package Outlines: 202, 203, 204, 210,
219, 230, 240
Refer to the Outline Drawings section in this catalog
for the total selection of outline (package)
dimensions.
210202 240
219 230203 204
Step Recovery Diodes
CVB1151 to CVB1153, CVB1031 to CVB1033
