For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
1
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
General Description
Features
Functional Diagram
Passive: No DC Bias Required
High Input IP3: 20 dBm
High LO/RF Isolation: 45 dB
High 2LO/IF Isolation: 50 dB
Wide IF Bandwidth: 16 - 22 GHz
Upconversion & Downconversion Applications
Die Size: 1.14 x 1.1 x 0.1 mm
Electrical Specications, TA = +25° C, LO = 9 GHz, LO = +13 dBm [2]
Typical Applications
The HMC1015 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
The HMC1015 is a general purpose triple balanced
mixer chip that can be used as a frequency converter
with 16 to 22 GHz at the IF port and 26 to 32 GHz at
the RF port. This mixer requires no external
components or matching circuitry. The HMC1015
provides excellent LO/RF, LO/IF and 2LO/IF isolation
due to optimized balun structures. The mixer operates
with LO drive levels from +9 dBm to +15 dBm. The
HMC1015 wideband mixer exhibits consistent
conversion gain and compression across its band-
width.
Parameter Min. Typ. Max. Units
RF Frequency Range 26 - 32 GHz
IF Frequency Range 16- 22 GHz
LO Frequency Range 7 - 11 GHz
Conversion Loss 10 13 dB
LO to RF Isolation [1] 45 dB
LO to IF Isolation [1] 31 dB
2LO to IF Isolation [1] 50 dB
RF to IF Isolation 35 dB
IP3 (Input) 22 dBm
1 dB Gain Compression (Input) 10 dBm
[1] Fixed IF = 17 GHz.
[2] Unless otherwise noted , all measurements performed as an upconverter with LO = 9 GHz.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
2
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Conversion Gain vs. Temperature,
Upconverter, LO= 7 GHz
Conversion Gain vs. Temperature
Upconverter, LO= 9 GHz
Conversion Gain vs. Temperature,
Upconverter, LO= 11 GHz
Conversion Gain vs. LO Power,
Upconverter, LO= 7 GHz
Conversion Gain vs. LO Power,
Upconverter, LO= 9 GHz
Conversion Gain vs. LO Power,
Upconverter, LO= 11 GHz
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30 31 32 33 34
+25 C
+85 C
-55 C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30 31 32 33 34
+25 C
+85 C
-55 C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30 31 32 33 34
+25 C
+85 C
-55 C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30 31 32 33 34
+9 dBm
+11 dBm
+13 dBm
+15 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30 31 32 33 34
+9 dBm
+11 dBm
+13 dBm
+15 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30 31 32 33 34 35
+9 dBm
+11 dBm
+13 dBm
+15 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
3
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Input IP3 vs. Temperature,
Upconverter, LO= 7 GHz
Input IP3 vs. Temperature,
Upconverter, LO= 9 GHz
Input IP3 vs. Temperature,
Upconverter, LO= 11 GHz
Input IP3 vs. LO Power,
Upconverter, LO= 7 GHz
Input IP3 vs. LO Power,
Upconverter, LO= 9 GHz
Input IP3 vs. LO Power,
Upconverter, LO= 11 GHz
5
10
15
20
25
30
24 25 26 27 28 29 30 31 32 33 34
+25 C
+85 C
-55 C
IP3 (dBm)
RF FREQUENCY (GHz)
5
10
15
20
25
30
24 25 26 27 28 29 30 31 32 33 34
+25 C
+85 C
-55 C
IP3 (dBm)
RF FREQUENCY (GHz)
5
10
15
20
25
30
24 25 26 27 28 29 30 31 32 33 34
+25 C
+85 C
-55 C
IP3 (dBm)
RF FREQUENCY (GHz)
5
10
15
20
25
30
24 25 26 27 28 29 30 31 32 33 34
+9 dBm
+11 dBm
+13 dBm
+15 dBm
IP3(dBm)
RF FREQUENCY (GHz)
5
10
15
20
25
30
24 25 26 27 28 29 30 31 32 33 34
+9 dBm
+11 dBm
+13 dBm
+15 dBm
IP3(dBm)
RF FREQUENCY (GHz)
5
10
15
20
25
30
24 25 26 27 28 29 30 31 32 33 34
+9 dBm
+11 dBm
+13 dBm
+15 dBm
IP3(dBm)
RF FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
4
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
RF and IF Return Loss LO Return Loss
Isolation LO/IF, LO/RF, 2LO/IF Isolation RF/IF
Input P1dB vs. Temperature @ LO= 9 GHz
-40
-30
-20
-10
0
6 8 10 12 14 16
9 dBm
11 dBm
13 dBm
15 dBm
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
15 19 23 27 31 35
RF
IF
RETURN LOSS (dB)
FREQUENCY (GHz)
-90
-80
-70
-60
-50
-40
-30
-20
-10
6 7 8 9 10 11 12
ISOLATION (dB)
LO FREQUENCY (GHz)
LO/RF
LO/IF
2LO/IF
-60
-50
-40
-30
-20
-10
24 25 26 27 28 29 30 31 32 33 34
ISOLATION (dB)
RF FREQUENCY (GHz)
RF/IF
2
4
6
8
10
12
14
24 25 26 27 28 29 30 31 32 33 34
+25C
+85C
-40C
P1dB (dBm)
RF FREQUENCY (GHz)
Input P1dB vs. LO Power @ LO= 9 GHz
2
4
6
8
10
12
14
24 25 26 27 28 29 30 31 32 33 34
+9 dBm
+11 dBm
+13 dBm
+15 dBm
P1dB (dBm)
RF FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
5
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Outline Drawing
Table 1. Absolute Maximum Ratings
RF / IF Input (LO = +18 dBm) 15.5 dBm
LO Drive 20 dBm
Maximum Junction Temperature 150 °C
Continuous Pdiss (Ta = 85 °C)
(derate 2.5 mW/°C above 85 °C) 79 mW
Thermal Resistance (RTH)
(junction to die bottom) 392 °C/W
Operating Temperature -55°C to +85°C
Storage Temperature -65°C to 125°C
Table 2. Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] For more information refer to the “Packaging
information” Document in the Product Support Section of
our website.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS 0.004”
3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099].
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± 0.002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
6
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Table 3. Pad Descriptions
Pad Number Function Description Pad Schematic
1RF This pad is AC coupled
and matched to 50 Ohms.
2IF This pad is AC coupled
and matched to 50 Ohms.
3LO This pad is AC coupled
and Matched to 50 Ohms.
Die Bottom GND Die bottom must be connected to RF/DC ground
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
7
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
MIXERS - TRIPLE-BALANCED - CHIP
8
HMC1015
v00.0 811
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Notes: