500 A
THYRISTOR / DIODE and
THYRISTOR / THYRIST OR
Bulletin I27401 rev. A 09/97
IRK.500.. SERIES
SUPER MAGN-A-pakTM Power Modules
Features
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL E78996 approved
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters IRK.500.. Units
IT(AV) or IF(AV) 500 A
@ TC82 °C
IT(RMS) 785 A
@ TC82 °C
ITSM or IFSM @ 50Hz 17.8 KA
@ 60Hz 18.7 KA
I2t @ 50Hz 1591 KA2s
@ 60Hz 1452 KA2s
I2t 15910 KA2s
VDRM
/VRRM range 800 to 1600 V
TSTG range - 40 to 150 °C
TJrange - 40 to 130 °C
Document Number: 93749
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1
IRK.500.. Series
Bulletin I27401 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/IDRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = TJ max.
VVmA
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
IRK.500.. 100
IT(AV) Maximum average on-state current 500 A 180° conduction, half sine wave
IF(AV) @ Case temperature 82 °C
IT(RMS) Maximum RMS on-state current 78 5 A 180° conduction, half sine wave @ TC = 82°C
ITSM Maximum peak, one-cycle, 17.8 KA t = 10ms No voltage
IFSM non-repetitive surge current 18.7 t = 8.3ms reapplied
15.0 t = 10ms 100% VRRM
15.7 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 1591 KA2s t = 10ms No voltage Initial TJ = TJ max.
1452 t = 8.3ms reapplied
1125 t = 10ms 100% VRRM
1027 t = 8.3ms reapplied
I2t Maximum I2t for fusing 15910 KA2s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage 0.85 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 0.93 (I > π x IT(AV)), TJ = TJ max.
rt1 Low level value of on-state slope resistance 0.36 m(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
rt2 High level value of on-state slope resistance 0.32 (I > π x IT(AV)), TJ = TJ max.
VTM Maximum on-state or forward 1.50 V Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
VFM voltage drop
IHMaximum holding current 500 mA TJ = 25°C, anode supply 12V resistive load
ILTypical latching current 1000
Parameter IRK.500.. Units Conditions
On-state Conduction
di/dt Maximum rate of rise of turned-on 1000 A/µs TJ = TJ max., ITM = 400A, VDRM applied
current
tdTypical delay time 2.0 µ s Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM , TJ = 25°C
tqTypical turn-off time 200 µs ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100
Parameter IRK.500.. Units Conditions
Switching
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
TJMax. junction operating temperature range - 40 to 130 °C
Tstg Max. storage temperature range - 40 to 150
RthJC Max. thermal resistance, junction to 0.065 K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to 0.02 K/W
heatsink
T Mounting torque ± 10%SMAP to heatsink 6 - 8 Nm
busbar to SMAP 12 - 15
wt Approximate weight 1500 g
Case style SUPER MAGN-A-pak See outline table
dv/dt Maximum critical rate of rise of off-state 1000 V/µs TJ = 130°C., linear to VD = 80% VDRM
voltage
VINS RMS isolation voltage 3000 V t = 1 s
IRRM Maximum peak reverse and off-state 100 mA TJ = TJ max., rated VDRM/VRRM applied
IDRM leakage current
Parameter IRK.500.. Units Conditions
Blocking
Parameter IRK.500.. Units Conditions
Triggering
PGM Maximum peak gate power 10 W TJ = TJ max., tp < 5ms
PG(AV) Maximum peak average gate power 2.0 W TJ = TJ max., f = 50Hz, d% = 50
+ IGM Maximum peak positive gate current 3.0 A TJ = TJ max., tp < 5ms
+ VGM Maximum peak positive gate voltage 20 V
- VGM Maximum peak negative gate voltage 5.0 V
IGT Max. DC gate current required to trigger 200 mA TJ = 25°C Vak 12V
VGT DC gate voltage required to trigger 3.0 V TJ = 25°C Vak 12V
IGD DC gate current not to trigger 10 mA TJ = TJ max.
VGD DC gate voltage not to trigger 0.25 V
Parameter IRK.500.. Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
Document Number: 93749
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
IRK T 500 - 16
123
1- Module type
2- Circuit configuration (See Circuit Configurations Table)
3- Current rating
4- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
4
Device Code
Ordering Information Table
RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.009 0.006
120° 0.011 0.011
90° 0.014 0.015 K/W TJ = TJ max.
60° 0.021 0.022
30° 0.037 0.038
IRKT IRKH IRKL
Circuit Configurations Table
+
7(K2)
6(G2)
-
4(K1)
5(G1)
~
1
2
3
+
7(K2)
6(G2)
-
~
1
2
3
+
-
4(K1)
5(G1)
~
1
2
3
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Outline Table
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
60
70
80
90
100
110
120
130
0 100 200 300 400 500 60
0
30°60° 90° 120° 180°
Average On -state Curre nt (A)
Max imum Allowab le Ca s e Temp era tu r e ( °C
)
Conduction Angle
IR K.500.. Series
R ( D C) = 0.065 K /W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 90
0
DC
30°60°90°
120°180°
Av era ge On - state Cu rr e n t (A )
Max imu m Allowab le Ca se Temperatu re (°C
)
Conduction Period
IR K.500. . S eries
R ( D C) = 0. 065 K/W
thJC
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics
0
100
200
300
400
500
600
700
0 100 200 300 400 5
00
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average O n-state Powe r Loss (W
)
A v er ag e On -st ate C ur ren t (A )
IRK.500.. Series
Per Junction
T = 130°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 80
0
DC
180°
120°
90°
60°
30°
RM S Limit
Cond uction Period
M ax i mu m A v e r a g e On - s ta t e P ow er Los s (W
)
Ave rage On-state Current (A )
IRK.500.. Series
Per Junction
T = 130°C
J
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
11010
0
Number Of Equal Amplitude Half Cycle Current Pulses (N
)
Peak Half Sine Wave On-state Cur rent (A
)
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V A pplied Following Surge.
RRM
IRK.500.. Series
Per Junction
6000
8000
10000
12000
14000
16000
18000
0.01 0.1
1
Pea k Hal f Sine Wav e On-s tate Cur rent (A)
Pul se T rain Dura tion (s )
Maximum Non Repetitive S urge Curren
t
V ersus Pulse Train Duration. Contro
l
Of Conduction May Not Be Maintained
.
In itial T = 130°C
No Voltage Reapplied
Rated V Re applied
RRM
J
IR K.500.. Se ries
Per Junction
0 20406080100120
Maximum Al lowable Ambien t Temperat ure (°C
)
R = 0.07 K/W - Delta R
0.09 K/W
0.12 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.6 K/W
thSA
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
Total RMS Output Curren t (A)
Maximum Total On-state Power Loss (W
)
Con duc tion An gle
IRK. 50 0. . Series
Per Module
T = 130°C
J
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 10 - On-state Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics
0 20 40 60 80 100 120
Max im u m All o wab l e Amb i en t Tem per atu re (°C
R = 0.01 K/W - Delta R
0.02 K/W
0.03 K/W
0.05 K/W
0.08 K/W
0.12 K/W
0.2 K/W
thSA
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000
Total Outp ut C urrent (A)
Max imum Tot al Powe r Loss (W)
180°
(Sine)
18
(Rect)
2 x IRK.500.. Series
Single Phase Bridge
Connected
T = 130°C
J
0 20 40 60 80 100 120
Max imum Allo wable Ambient T emperature (°C
)
R = 0.01 K/W - Delta R
0.02 K/W
0.03 K/W
0.05 K/W
0.08 K/W
0.2 K/W
thSA
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 250 500 750 1000 1250 1500
Total Output Curren t (A)
M aximum Total Power Loss (W)
120°
(Rect)
3 x IRK.500.. Series
Three Phase Bridge
Connected
T = 130°C
J
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4
.5
T = 25°C
J
Instantaneo us On-state Current (A)
Instantane ous On-state Voltage (V)
T = 130°C
J
IRK.500.. Series
Per Junction
0.001
0.01
0.1
0.001 0.01 0.1 1 10 10
0
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
IRK.500.. Series
Per Junction
Steady State Value :
R = 0.065 K /W
(DC O perati o n)
thJC
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Fig. 12 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 10
0
VGD
IGD
(b) (a)
T j=25 °C
Tj=-40 °C
(2) (3)
Instantaneous Gate Current (A)
Inst an t a neous G ate Volt age (V)
a) Recommended load line fo r
b ) Recommended load line for
<=30 % rated di/dt : 10V, 1 0 ohms
rated di/dt : 20V, 10ohms; t r<=1 µs
tr<=1 µs
(1)
(1) PGM = 10 W, t p = 4ms
(2) PGM = 20 W, t p = 2ms
(3) PGM = 40 W, t p = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Tj=130 °C
IR K .500. . Ser i es Frequ ency L im it ed b y PG( AV)
(4)
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8
Legal Disclaimer Notice
Vishay
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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