DATA SH EET
Product specification 1996 Feb 06
DISCRETE SEMICONDUCTORS
BLT70
UHF power transistor
1996 Feb 06 2
Philips Semiconductors Product specification
UHF power transistor BLT70
FEATURES
•Very high efficiency
•Low supply voltage.
APPLICATIONS
•Hand-held radio equipment in common emitter class-AB
operation in the 900 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223H SMD package.
PINNING - SOT223H
PIN SYMBOL DESCRIPTION
1 e emitter
2 b base
3 e emitter
4 c collector Fig.1 Simplified outline and symbol.
handbook, halfpage
e
c
b
MAM043 - 1
4
123
Top view
QUICK REFERENCE DATA
RF performance at Ts≤60 °C in a common emitter test circuit (see Fig.7).
MODE OF OPERATION f
(MHz) VCE
(V) PL
(mW) Gp
(dB) ηC
(%)
CW, class-AB 900 4.8 600 ≥6≥60
1996 Feb 06 3
Philips Semiconductors Product specification
UHF power transistor BLT70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −16 V
VCEO collector-emitter voltage open base −8V
V
EBO emitter-base voltage open collector −2.5 V
ICcollector current (DC) −250 mA
Ptot total power dissipation Ts=60°C; note 1 −2.1 W
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −175 °C
Fig.2 DC SOAR.
handbook, halfpage
0
3
Ptot
(W)
2
1
0100 Ts (oC) 200
MGD197
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to
soldering point Ptot = 2.1 W; Ts=60°C; note 1 55 K/W
1996 Feb 06 4
Philips Semiconductors Product specification
UHF power transistor BLT70
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)CBO collector-base breakdown voltage open emitter; IC= 0.5 mA 16 −V
V(BR)CEO collector-emitter breakdown voltage open base; IC=5mA 8 −V
V
(BR)EBO emitter-base breakdown voltage open collector; IE= 0.2 mA 2.5 −V
ICES collector leakage current VCE =7V; V
BE =0 −0.1 mA
hFE DC current gain VCE = 4.8 V; IC= 100 mA 25 −
Cccollector capacitance VCB = 4.8 V; IE=i
e= 0; f = 1 MHz −3.5 pF
Cre feedback capacitance VCE = 4.8 V; IC= 0; f = 1 MHz −2.5 pF
Fig.3 DC current gainas a function of collector
current; typical values.
VCE = 4.8 V; Tj=25°C.
handbook, halfpage
0 100 200 IC (mA) 300
100
hFE
0
80
MGD198
60
40
20
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
IE=i
e= 0; f = 1 MHz; Tj=25°C.
handbook, halfpage
048 16
4
C
c
(pF)
3
1
0
2
MGD199
12 VCB (V)
1996 Feb 06 5
Philips Semiconductors Product specification
UHF power transistor BLT70
APPLICATION INFORMATION
RF performance at Ts≤60 °C in a common emitter test circuit (see note 1 and Fig.7).
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; PL= 0.5 W; Ts≤60 °C.
MODE OF OPERATION f
(MHz) VCE
(V) ICQ
(mA) PL
(W) Gp
(dB) ηC
(%)
CW, class-AB 900 4.8 0.01 0.6 ≥6≥60
typ. 8.1 typ. 73
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts≤60 °C.
handbook, halfpage
0 1.0
10
Gp
(dB)
0
2
MGD200
4
6
8
0.2 0.4 0.6 0.8PL (W)
100
ηC
(%)
ηC
80
20
40
0
60
Gp
Fig.6 Load power as a function of input
power; typical values.
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts≤60 °C.
handbook, halfpage
0 100 PIN (mW) 200
1.0
PL
(W)
0
0.8
MGD201
0.6
0.4
0.2
1996 Feb 06 6
Philips Semiconductors Product specification
UHF power transistor BLT70
Test circuit information
Fig.7 Common emitter test circuit for class-AB operation at 900 MHz.
handbook, full pagewidth
MGD205
R3
R1
R2
T1
L8
C3
C2
C1 C14
C5
C4
C7
C6
L1 L3
C10
L7
input
50 Ωoutput
50 Ω
DUT
C12
C9
C8
C11
L9
C13
L10L2 L4 L5 L6
+Vbias +VS
VS=V
bias = typ. 4.8 V.
1996 Feb 06 7
Philips Semiconductors Product specification
UHF power transistor BLT70
List of components used in test circuit (see Figs 7 and 8)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr= 2.2); thickness 1⁄16";
thickness of the copper sheet 2 ×35 µm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C6, C9, C14 multilayer ceramic chip capacitor;
note 1 100 pF
C2 multilayer ceramic chip capacitor;
note 1 1pF
C4 multilayer ceramic chip capacitor;
note 1 2.4 pF
C3, C5, C12, C13 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09004
C7 multilayer ceramic chip capacitor;
note 1 5.1 pF
C8 tantalum capacitor 1 µF, 35 V
C10 multilayer ceramic chip capacitor;
note 1 2.7 pF
C11 tantalum capacitor 100 µF, 20 V
L1 stripline; note 2 50 Ωlength 29.1 mm
width 5 mm
L2 stripline; note 2 50 Ωlength 21 mm
width 5 mm
L3 8 turns enamelled 0.8 mm copper
wire 216 nH length 7 mm
internal dia. 4.5 mm
L4 stripline; note 2 50 Ωlength 1 mm
width 5 mm
L5 stripline; note 2 50 Ωlength 3 mm
width 2.5 mm
L6 stripline; note 2 50 Ωlength 12 mm
width 5 mm
L7 8 turns enamelled 0.8 mm copper
wire 105 nH length 7 mm
internal dia. 3.4 mm
L8 grade 3B Ferroxcube wideband
HF choke 4132 020 36640
L9 stripline; note 2 50 Ωlength 12 mm
width 5 mm
L10 stripline; note 2 50 Ωlength 28 mm
width 5 mm
R1 metal film resistor 0.1 W, 15 Ω
R2 metal film resistor 0.1 W, 390 Ω
R3 metal film resistor 0.6 W, 10 Ω
T1 NPN transistor BD139
1996 Feb 06 8
Philips Semiconductors Product specification
UHF power transistor BLT70
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.7.
Dimensions in mm.
The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
handbook, full pagewidth
Copper foil
Plated through holes
C1
C3
C2
C5
C4 C6
R2
+Vbias
+VS
R1
L2L1
L3
T1
L4
L5 L6
L7
R3
L8
C8 C11
C9
L9 L10
C7 C10 C12 C13
BLT70
MGD206
C14
139
79
1996 Feb 06 9
Philips Semiconductors Product specification
UHF power transistor BLT70
Fig.9 Input impedance as a function of frequency
(series components); typical values.
VCE = 4.8 V; ICQ = 0.01 mA; PL= 0.6 W; Ts≤60 °C.
handbook, halfpage
800 850 1000
20
0
16 ri
xi
MGD202
900 950
12
8
4
Zi
(Ω)
f (MHz)
Fig.10 Load impedance as a function of frequency
(series components); typical values.
VCE = 4.8 V; ICQ = 0.01 mA; PL= 0.6 W; Ts≤60 °C.
handbook, halfpage
800 850 900 1000
40
30
20
MGD203
950
10
0
−20
−10
f (MHz)
ZL
(Ω)
XL
RL
Fig.11 Power gain as a function of
frequency; typical values.
VCE = 4.8 V; ICQ = 0.01 mA; PL= 0.6 W; Ts≤60 °C.
handbook, halfpage
800 850 900 1000
12
0
4
8
MGD204
950
Gp
(dB)
f (MHz)
Fig.12 Definition of transistor impedance.
handbook, halfpage
MBA451
ZiZL
1996 Feb 06 10
Philips Semiconductors Product specification
UHF power transistor BLT70
PACKAGE OUTLINE
Fig.13 SOT223H.
Dimensions in mm.
handbook, full pagewidth
6.7
6.3
0.95
0.85
2.3 0.80
0.60
4.6
3.1
2.9
3.7
3.3 7.3
6.7
A
B0.2 A
1.80
max
16
16o
max
10o
max
0.10
0.01
0.32
0.24
4
123
MSA035 - 1
(4x)
0.1 B
M
M
S seating plane 0.1 S
o
1996 Feb 06 11
Philips Semiconductors Product specification
UHF power transistor BLT70
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
