AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. AO8830 and AO8830L are electrically identical. -RoHs Compliant -AO8830L is Halogen Free VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) RDS(ON) < 37m (VGS = 3.1V) RDS(ON) < 41m (VGS = 2.5V) RDS(ON) < 55m (VGS = 1.8V) ESD PROTECTED! D2 D1 TSSOP8 Top View Bottom View TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6K 1.6K G2 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A ID IDM TA=70C TA=25C Power Dissipation Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V 12 V 30 1.5 W 0.94 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 4.8 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 20 6 Pulsed Drain Current B A S2 RJA RJL Typ 64 115 70 Max 83 140 85 Units C/W C/W C/W www.aosmd.com AO8830 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V 1 TJ=55C 5 Gate-Body leakage current VDS=0V, VGS=10V Gate-Source Breakdown Voltage VDS=0V, IG=250uA 12 VGS(th) Gate Threshold Voltage VDS=VGS ID=1mA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 16 TJ=125C Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 22 27 31 m m VGS=3.1V, ID=4A 22 30 37 VGS=2.5V, ID=4A 25 32 41 m VGS=1.8V, ID=2A 32 42 55 m 1 V 2.5 A VDS=5V, ID=6A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance V 30 Forward Transconductance Rg 1 25 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss 0.6 19 VSD Output Capacitance V VGS=4.5V, ID=5A gFS Coss A 10 VGS=10V, ID=6A IS Units V VDS=16V, VGS=0V BVGSO Static Drain-Source On-Resistance Max 20 IGSS RDS(ON) Typ 21 0.75 S 290 pF VGS=0V, VDS=10V, f=1MHz 120 pF 40 VGS=0V, VDS=0V, f=1MHz 1.6 pF k 5.2 nC 2.1 nC VGS=4.5V, VDS=10V, ID=6A Qgd Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 280 ns tr Turn-On Rise Time 972 tD(off) Turn-Off DelayTime 2.35 ns s tf Turn-Off Fall Time 2.2 s trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/s, VGS=-9V 25 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s, VGS=-9V 8 ns nC VGS=4.5V, VDS=10V, RL=1.7, RGEN=3 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The currentand power rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 5: July 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VGS=5V 3V 4V 25 VGS =2V 20 25C 125C ID(A) ID(A) 20 VGS =1.5V 10 15 10 5 0 0 1 2 3 4 0 5 0.0 VDS(Volts) 1.5 2.0 1.6 60 Normalize ON-Resistance VGS =1.8V 50 RDS(ON)(m) 1.0 VGS =2.5V 40 30 20 VGS =10V VGS =4.5V 10 2.5 3.0 3.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 0 VGS=4.5V VGS=2.5V 1.4 ID=5A ID=4A 1.2 VGS=10V 1.0 VGS=1.8V ID=6A ID=2A 0.8 0.6 0 5 10 15 20 -50 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 80 1E+01 ID=6A 70 1E+00 60 125C 1E-01 50 IS(A) RDS(ON)(m) 0.5 125C 40 1E-02 1E-03 30 20 1E-04 25C 25C 1E-05 10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO8830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=10V Capacitance (pF) 4 VGS(Volts) Ciss ID=6A 3 2 1 300 200 Coss Crss 100 0 0 0 1 2 3 4 5 0 6 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100 Power (W) ID (Amps) 10 1ms 1 0.1 20 10ms 100ms DC 10 20 15 10 5 10s 1 TJ(Max)=150C TA=25C 25 10s 0.1 15 30 TJ(Max)=150C, TA=25C RDS(ON) limited 10 VDS(Volts) Figure 8: Capacitance Characteristics 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 ZJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8830 Gate Charge Test Circuit & Waveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgd Qgs - Vgs Ig Charge R e sistive S w itch in g T e st C ircu it & W a ve fo rm s RL Vds V ds DUT V gs Rg 9 0% + Vdd VDC - 10% V gs V gs t d (o n ) tr t d (o ff) to n tf t o ff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vds Vdd www.aosmd.com