135 A
140 A
160 A
Bulletin I27117 rev. C 03/02
1
SERIES
IRK.136, .142, .162
NEW INT-A-pak Power Modules
IT(AV) 135 140 160 A
@ TC 85 85 85 °C
IT(RMS) 300 310 355 A
ITSM @ 50Hz 3200 4500 4870 A
@ 60Hz 3360 4712 5100 A
I2t @ 50Hz 51.5 102 119 KA2s
@ 60Hz 47 92.5 108 KA2s
I2t 515.5 1013 1190 KA2s
VRRM 400 to 1600 V
TJ range - 40 to 125 °C
Major Ratings and Characteristics
Features
High Voltage
Electrically Isolated by DBC Ceramic ( Al2O3)
3500 VRMS Isolating Voltage
Industrial Standard Package
High Surge Capability
Glass Passivated Chips
Modules uses High Voltage Power thyristor/diodes
in three Basic Configurations
Simple Mounting
UL E78996 approved
Parameters IRK.136.. IRK.142.. IRK.162.. Units
THYRISTOR/DIODE and
THYRISTOR/THYRISTOR
Applications
DC Motor Control and Drives
Battery Charges
Welders
Power Converters
Lighting Control
Heat and Temperature Control
CASE STYLE NEW INT-A-PAK
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IRK.136, .142, .162 Series
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Type number Voltage VRRM/VDRM , Maximum repetitive VRSM/VDSM, Maximum non-repetitive IRRM / IDRM
Code peak reverse voltage peak reverse voltage @ 125°C
V V m A
IRK.136 04 400 500 50
IRK.142 08 800 900
IRK.162 12 1200 1300
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 135 140 160 A 180° conduction, half sine wave
@ Case temperature 85 85 85 °C
IT(RMS) Max. RMS on-state current 300 310 355 A as AC switch
ITSM Maximum peak, one-cycle 3200 4500 4870 A t = 10ms No voltage
on-state, non-repetitive 3360 4712 5100 t = 8.3ms reapplied
surge current 2700 3785 4100 t = 10ms 100% VRRM
2800 3963 4300 t = 8.3ms reapplied Sine half wave,
I2t Maximum I2t for fusing 51.5 102 119 KA2s t = 10ms No voltage Initial TJ = TJ max.
47 92.5 108 t = 8.3ms reapplied
36.5 71.6 84 t = 10ms 100% VRRM
33.3 65.4 76.7 t = 8.3ms reapplied
I2t Maximum I2t for fusing 515.5 1013 1190 KA2s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 0.86 0.83 0.8 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.05 1 0.98 (I > π x IT(AV)), @ TJ max.
voltage
rt1 Low level value on-state 2.02 1.78 1.67 m (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 1.65 1.43 1.38 (I > π x IT(AV)), @ TJ max.
slope resistance
VTM Maximum forward voltage drop 1.57 1.55 1.54 V ITM = π x IT(AV), TJ = 25°C, 180°conduction
IH Maximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C
IL Maximum latching current 400 mA Anode supply = 6V resistive load = 1
Gate pulse: 10V, 100µs, TJ = 25°C
tgd Typical delay time 1 TJ = 25oC Gate Current=1A dIg/dt=1A/µs
tgr Typical rise time 2 µs TJ = 25oC Vd=0,67% VDRM
tq Typical turn-off time 50 - 200 ITM = 300 A; -dI/dt = 15 A/µs; TJ = TJ max
Vr = 50 V; dV/dt = 20 V/µs; Gate 0 V, 100
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Forward Conduction
Switching
Electrical Specifications
Voltage Ratings
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IRK.136, .142, .162 Series
3
Bulletin I27117 rev. C 03/02
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Thermal and Mechanical Specifications
TJ Max. junction operating -40 to 125 °C
temperature range
Tstg Max. storage temperature -40 to 150 °C
range
RthJC Max. thermal resistance, 0.18 0.18 0.16 K/W DC operation, per junction
junction to case
RthCS Max. thermal resistance, 0.05 K/W Mounting surface smooth, flat and greased
case to heatsink Per module
T Mounting IAP to heatsink 4 to 6 Nm
torque ± 10% busbar to IAP 4 to 6
wt Approximate weight 200 (7.1) g(oz)
Case Style New Int-A-Pak
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
Triggering
PGM Max. peak gate power 12 W tp 5ms, TJ = TJ max.
PG(AV) Max. average gate power 3 W f=50Hz, TJ = TJ max.
IGM Max. peak gate current 3 A tp 5ms, TJ = TJ max.
-VGT Max. peak negative 10 V
gate voltage
VGT Max. required DC gate 4 V TJ = - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 TJ = 25°C load; Ra = 1
1.7 TJ = TJ
max.
IGT Max. required DC gate 270 TJ = - 40°C Anode supply = 6V, resistive
current to trigger 150 mA TJ = 25°C load; Ra = 1
80 TJ = TJ
max.
VGD Max. gate voltage 0.3 V @ TJ = TJ max., rated VDRM
applied
that will not trigger
IGD Max. gate current 10 mA
that will not trigger
di/dt Max. rate of rise of 300 A/µs @ TJ = TJ max., ITM = 400A
rated VDRM
applied
turned-on current
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Units
180o 120o 90o 60o 30o 180o 120o 90o 60o 30o
IRK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
IRK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 K/W
IRK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Blocking
IRRM Maximum peak reverse and 50 mA TJ = 125oC
IDRM off-state leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted, t = 1s
dV/dt critical rate of rise of off-state voltage 1000 V/µs TJ = TJ max., exponential to 67% rated VDRM
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IRK.136, .142, .162 Series
4
Bulletin I27117 rev. C 03/02
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Outline Table
1 2 3
1 - Module Type
2 - Circuit Configuration
3 - Current Rating: IT(AV)
4 - Voltage Code: Code x 100 = VRRM
4
Device Code
Ordering Information Table
IRK T 162 / 16
Dimensions are in millimeters and [inches]
NOTE: To order the Optional Hardware see Bulletin I27900
5
4
3
6
7
1
2
1
2
3
4
5
2
1
3
7
6
IRKT IRKH IRKL
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IRK.136, .142, .162 Series
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Fig.5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250
DC
30
60
90
120
180
Average On-state Current (A)
Maximum Allowable Case Temperature ( C)
Conduction Period
IRK.136.. Series
R (DC ) = 0.18 K/W
thJC
0
50
100
150
200
250
300
0 30 60 90 120 150
RMS Lim it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180
120
90
60
30
IRK.136.. Series
Per Junction
T = 125 C
J
0
50
100
150
200
250
300
350
0 50 100 150 200 250
RMS Lim it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
DC
180
120
90
60
30
IRK.136.. Series
Per Junction
T = 125 C
J
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
1 10 100
Numb er O f Eq ual Am plitude Ha lf C ycle C urrent Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
IRK.136.. Series
Per Junction 1000
1500
2000
2500
3000
3500
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
IRK.136.. Series
Per Junction
Initial T = 125 C
No Voltag e Reapplied
Rated V Reapplied
J
RRM
Versus Pulse Train Duration. Control
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140
30
60 90
120
180
Maximum Allowable Case Temperature ( C)
Conduction Angle
Average Forward Current (A)
IRK.136.. Series
R (DC) = 0.18 K/W
thJC
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IRK.136, .142, .162 Series
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R = 0.01 K/W - Delta R
0 25 50 75 100 125
Maximum Allowable Ambient Temperature ( C)
thSA
0.04 K/W
0.08 K/W
0.12 K/W
0.2 K/W
0.35 K/W
0.6 K /W
0 25 50 75 100 125
Maximum Allowable Am bient Tem perature ( C)
0.04 K/W
R = 0.01 K/W - Delta R
thSA
0.08 K/W
0.12 K/W
0 .16 K /W
0.4 K/W
0.25 K/W
0.6 K/W
1 K/W
0 25 50 75 100 125
Maximum Allowable Ambient Tem perature ( C)
R = 0.04 K/W
- Delta R
0.08 K/W
0.1 K/W
0.16 K/W
0.25 K/W
0.4 K /W
1 K/W
thSA
Fig.7 - On State Power Loss Characteristics
Fig.8 - On State Power Loss Characteristics
Fig.9- On State Power Loss Characteristics
0
300
600
900
1200
1500
0 100 200 300 400
Total O utput C urrent (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x IRK.136.. Series
Three Phase Bridge
C o nn ected
T = 12 5 C
J
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
180
120
90
60
30
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.136.. Series
Per Module
T = 125 C
J
0
100
200
300
400
500
600
700
800
900
1000
0 55 110 165 220 275
Total Output Current (A)
Maximum Total Power Loss (W)
2 x IRK.136.. Series
Single Phase Bridge
Connected
T = 125 C
J
180
(Sine)
180
(Rect)
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IRK.136, .142, .162 Series
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Fig.14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 13 - On-State Power Loss Characteristics
Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250
DC
30
60
90 120
180
Average On-state Current (A)
Maximum Allowable Case Temperature ( C)
Conduction Period
IRK.142.. Series
R (DC ) = 0.18 K/W
thJC
0
50
100
150
200
250
0 30 60 90 120 150
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180
120
90
60
30
IRK.142.. Series
Per Junction
T = 125 C
J
0
50
100
150
200
250
300
350
0 50 100 150 200 250
DC
180
120
90
60
30
RMS Lim it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.142.. Series
Per Junction
T = 12 5 C
J
1500
2000
2500
3000
3500
4000
4500
1 10 100
Num ber Of Equa l Am plitude Half Cycle Current Pulses (N)
RRM
Peak Half Sine Wave On-state Current (A)
J
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
IRK.142.. Series
Per Junction
1500
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
O f Co nductio n Ma y Not Be M ainta ined .
J
Initial T = 125 C
No Voltage Reapplied
Rated V Reapplied
IRK.142.. Series
Per Junction
RRM
70
80
90
100
110
120
130
0 30 60 90 120 150
30
60 90
120 180
Maximum Allowable Case Temperature ( C)
Conduction Angle
Average Forward Current (A)
IRK.142.. Series
R (DC) = 0.18 K/W
thJC
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IRK.136, .142, .162 Series
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R = 0.01 K/W
- Delta R
0 25 50 75 100 125
Maximum Allowable Ambient Temperature ( C)
thSA
0.04 K/W
1 K /W
0.6 K/W
0.4 K/W
0.25 K/W
0.08 K/W
0.12 K/W
0.16 K/W
0 25 50 75 100 125
Maximum Allowable Ambient Temperature ( C)
R = 0.02 K/W - Delta R
thSA
0.04 K/W
0.06 K/W
0.08 K/W
0.1 K/W
0.16 K/W
0.2 K/W
R = 0.01 K/W - Delta R
0 25 50 75 100 125
Maximum Allowable Ambient Temperature ( C)
thSA
0.6 K/W
0.25 K/W
0.16 K/W
0.12 K/W
0.08 K/W
0.04 K/W
Fig.16 - On State Power Loss Characteristics
Fig.17 - On State Power Loss Characteristics
Fig.18- On State Power Loss Characteristics
0
100
200
300
400
0 50 100 150 200 250 300
Total RM S Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.142.. Series
Per M odule
T = 125 C
J
180
120
90
60
30
0
200
400
600
800
1000
0 100 200 300
Total O utput C urrent (A)
Maximum Total Power Loss (W)
180
(Sine)
180
(Rect)
2 x IRK.142.. Series
Single Phase Bridge
C o nn ected
T = 125 C
J
0
400
800
1200
1600
0 50 100 1 50 20 0 25 0 30 0 35 0 400 45 0
Total Output Current (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x IRK.142.. Series
Three Phase Bridge
Connected
T = 125 C
J
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IRK.136, .142, .162 Series
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0
50
100
150
200
250
300
350
400
0 20 40 60 8 0 10 0 120 1 40 16 0 18 0
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.162.. Series
Per Junction
T = 125 C
J
180
120
90
60
30
Fig.23 - Maximum Non-Repetitive Surge Current Fig. 24 - Maximum Non-Repetitive Surge Current
Fig. 22 - On-State Power Loss Characteristics
Fig. 19 - Current Ratings Characteristics Fig. 20 - Current Ratings Characteristics
Fig. 21 - On-State Power Loss Characteristics
0
50
100
150
200
250
300
350
400
0 30 60 9 0 1 2 0 15 0 180 2 10 24 0 27 0
DC
180
120
90
60
30
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.162.. Series
Per Junction
T = 125 C
J
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
DC
30
60
90
120
180
Average On-state Current (A)
Maximum Allowable Case Temperature ( C)
Conduction Period
IRK.162.. Series
R (DC ) = 0.16 K/W
thJC
1500
2000
2500
3000
3500
4000
4500
1 10 100
Num ber O f Equa l Am plitud e Half Cycle C urrent Pulses (N)
At A ny Rated Load Condition And W ith
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
IRK.162.. Series
Per Junction
J
1500
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
O f Co nductio n Ma y Not Be M ainta ined .
IRK.162.. Series
Per Junction
In itial T = 125 C
No Voltage Reapplied
Rated V Reapplied
RRM
Versus Pulse Train Duration. Control
J
70
80
90
100
110
120
130
0 30 60 90 120 150 180
30
60 90
120 180
Maximum Allowable Case Temperature ( C)
Conduction Angle
Average Forw ard Current (A)
IRK.162.. Series
R (DC) = 0.16 K/W
thJC
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IRK.136, .142, .162 Series
10
Bulletin I27117 rev. C 03/02
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0 25 50 75 100 125
M a xim um Allow a ble A m b ie n t Tem p era tu re ( C )
R = 0.02 K/W - Delta R
0.04 K/W
0.2 K/W
0.08 K/W
0.12 K/W
0.6 K /W
0.3 K/W
thSA
R = 0.04 K/W - Delta R
0 25 50 75 100 125
Maximum Allowable Ambient Temperature ( C)
thSA
0.08 K/W
0.2 K/W
1 K/W
0.6 K/W
0.4 K/W
0.12 K/W
0.3 K/W
0 25 50 75 100 125
Maximum Allowable Am bient Temperature ( C)
R = 0.02 K/W - Delta R
thSA
0.04 K/W
0.06 K/W
0.08 K/W
0.1 K/W
0.16 K/W
0.2 K/W
Fig.25 - On State Power Loss Characteristics
Fig.26 - On State Power Loss Characteristics
Fig.27- On State Power Loss Characteristics
0
250
500
750
1000
1250
1500
0 50 100 15 0 200 250 30 0 3 50 4 00 450
Total Output Current (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x IRK.162.. Series
Three Phase Bridge
Connected
T = 125 C
J
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300
Total Output Current (A)
Maximum Total Power Loss (W)
2 x IRK.162.. Series
Single Phase Bridge
Connected
T = 125 C
J
180
(Sine)
180
(Rect)
0
100
200
300
400
500
600
0 100 200 300 400
180
120
90
60
30
Total RM S Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.162.. Series
Per Module
T = 125 C
J
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IRK.136, .142, .162 Series
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Fig.28 - On State Voltage Drop Characteristics Fig.29 - On State Voltage Drop Characteristics
Fig.30 - On State Voltage Drop Characteristics Fig.31 - Thermal Impedance ZthJC Characteristics
Fig.33 - Thermal Impedance ZthJC Characteristics
Fig.32 - Thermal Impedance ZthJC Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
0 1 2 3 4 5
T = 25˚C
J
T = 125˚C
IRK.136.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
0 1 2 3 4 5
T = 125˚C
T = 25˚C
IRK.142.. Series
Per Junction
J
J
1
10
100
1000
10000
0 1 2 3 4 5
T = 25˚C
J
T = 125˚C
IRK.162.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC
0
.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Steady State Value
(DC Operation)
IRK.136.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC
0
.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
IRK.142.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC
0
.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
IRK.162.. Series
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Fig. 34 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate p ulse
(4) (3) (2) (1)
Instantaneous Gate Voltage (V)
TJ = -40 C
TJ = 25 C
TJ = 125 C
a)Recomm ended loa d line for
b)Recom m ended loa d line for
VG D
IG D
(1) PGM = 200 W , tp = 300 s
(2) PGM = 60 W , tp = 1 m s
(3) PGM = 30 W , tp = 2 m s
(4) PGM = 12 W , tp = 5 m s
<= 30% ra ted d i/dt: 15 V , 40 ohm s
tr = 1 s, tp >= 6 s
ra ted di/dt: 20 V, 20 ohms
tr = 0.5 s, tp >= 6 s
IRK.136..142..162.. Series
Frequency Lim ited by PG(AV )
Instantan eous G ate Current (A)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Multiple Level.
Qualification Standards can be found on IR's Web site.
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