IRK.136, .142, .162 Series
3
Bulletin I27117 rev. C 03/02
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Thermal and Mechanical Specifications
TJ Max. junction operating -40 to 125 °C
temperature range
Tstg Max. storage temperature -40 to 150 °C
range
RthJC Max. thermal resistance, 0.18 0.18 0.16 K/W DC operation, per junction
junction to case
RthCS Max. thermal resistance, 0.05 K/W Mounting surface smooth, flat and greased
case to heatsink Per module
T Mounting IAP to heatsink 4 to 6 Nm
torque ± 10% busbar to IAP 4 to 6
wt Approximate weight 200 (7.1) g(oz)
Case Style New Int-A-Pak
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
Triggering
PGM Max. peak gate power 12 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power 3 W f=50Hz, TJ = TJ max.
IGM Max. peak gate current 3 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative 10 V
gate voltage
VGT Max. required DC gate 4 V TJ = - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 TJ = 25°C load; Ra = 1Ω
1.7 TJ = TJ
max.
IGT Max. required DC gate 270 TJ = - 40°C Anode supply = 6V, resistive
current to trigger 150 mA TJ = 25°C load; Ra = 1Ω
80 TJ = TJ
max.
VGD Max. gate voltage 0.3 V @ TJ = TJ max., rated VDRM
applied
that will not trigger
IGD Max. gate current 10 mA
that will not trigger
di/dt Max. rate of rise of 300 A/µs @ TJ = TJ max., ITM = 400A
rated VDRM
applied
turned-on current
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Units
180o 120o 90o 60o 30o 180o 120o 90o 60o 30o
IRK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
IRK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 K/W
IRK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Parameter IRK.136 IRK.142 IRK.162 Units Conditions
Blocking
IRRM Maximum peak reverse and 50 mA TJ = 125oC
IDRM off-state leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted, t = 1s
dV/dt critical rate of rise of off-state voltage 1000 V/µs TJ = TJ max., exponential to 67% rated VDRM
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