Features
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Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
RFSW2045D
DC TO 20GHz GaAs SP4T SWITCH
RFMD’s RFSW2045D is a reflective SP4T GaAs microwave monolithic inte-
grated circuit (MMIC) switch designed using the RFMD FD05 0.5m
switch process. The RFSW2045D is developed for broadband communica-
tions, instrumentation and electronic warfare.
RFin
V1
RF1
V3
RFSW2045D
RF4
RF2
V7
V2
V4
V8
V5 RF3
V6
Low Insertion Loss: 2.8dB at
20GHz
High Isolation: 39dB at
20GHz
19nS Switching Speed
GaAs pHEMT Technology
Applications
Broadband Communications
Test Instrumentation
Fiber Optics
Military
Aerospace
DS120105
Package: Die, 1.91mmx1.33mmx0.10mm
RFSW2045D
DC to 20 GHz
GaAs SP4T
Switch
Parameter Specification Unit Condition
Min. Typ. Max.
Operating Frequency DC 20 GHz
Insertion Loss (0GHz to 5GHz) 2.0 2.6 dB ON State
Insertion Loss (5GHz to 10GHz) 2.0 2.8 dB ON State
Insertion Loss (10GHz to 15GHz) 2.3 3.1 dB ON State
Insertion Loss (15GHz to 20GHz) 2.8 3.7 dB ON State
Isolation (0GHz to 5GHz) 48 60 dB OFF State
Isolation (5GHz to 10GHz) 44 50 dB OFF State
Isolation (10GHz to 15GHz) 40 43 dB OFF State
Isolation (15GHz to 20GHz) 31 39 dB OFF State
Input Return Loss (DC to 20GHz) 8 11 dB ON State
Output Return Loss (DC to 20GHz) 11 14 dB ON State
IIP3 26 33 dBm 100MHz spacing 2 dBm input
IIP2 49 54 dBm 100MHz spacing 2 dBm input
Switching Speed 19 25 ns 50% control to 90% RF
Control Current 34 60 uA Sum of all control lines
Control Voltage -3 -5 -8 VDC
Electrical Specifications, TA=+25°C, VCTRL =-5VDC
2 of 6 DS120105
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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RFSW2045D
Typical Electrical Performance
Absolute Maximum Ratings
Parameter Rating Unit
Drain Bias Voltage (VCTRL)-10V
DC
RF Input Power +21 dBm
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +85 °C
ESD JESD22-A114 Human Body
Model (HBM) Class 0 (All Pads)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0 5 10 15 20 25
dB
GHz
Insertion L oss over Tem pe rature (High = -5V, Low = 0V)
25C
85C
-40C
-20
-17.5
-15
-12.5
-10
-7.5
-5
-2.5
0
0 5 10 15 20 25
dB
GHz
On State Input Return Loss over Temperature (High = -5 V, Low = 0V)
25C
85C
-40C
-80
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 20 25
dB
GHz
Isolation over Temperature (High = -5V, Low = 0V)
25C
85C
-40C
-24
-21
-18
-15
-12
-9
-6
-3
0
0 5 10 15 20 25
dB
GHz
On State Output Return Loss over Temperature (High = -5V, Low = 0V)
25C
85C
-40C
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RFSW2045D
29
30
31
32
33
34
35
36
37
0 5 10 15 20 25
dBm
GHz
IIP3 over Voltage (25C, Low = 0V, Pin = +2dBm)
-8V
-5V
-3V
31
32
33
34
35
36
37
38
39
0 5 10 15 20 25
dBm
GHz
IIP3 over Temp erature (High = -5v, Low = 0V, Pin = +2dBm)
-40C
25C
85C
48
50
52
54
56
58
60
62
64
0 5 10 15 20 25
dBm
GHz
IIP2 over Voltage (25C, Low = 0V, Pin = +2dBm)
-8V
-5V
-3V
48
50
52
54
56
58
60
62
64
0 5 10 15 20 25
dBm
GHz
IIP2 over Temperature (High = -5v, Low = 0V, Pin = +2dBm)
-40C
25C
85C
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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RFSW2045D
Die Layout
RFIN
RF1
RF2 RF3
RF4
GND
GND
GND GND GND GND
GND
GND
GNDGND
V2 V1 V7 V8
V5
V6
V4
V3
RFSW2045D
492
96
805
955
11051417 1813
456
102
606
756 1153
1303
1807
100 402
552
702 970
1234
1453
100 402
552
702970
1234
All ot her bondpads ar e 88x88
RF b ondpads are 150x88
except RF4 which is 112x88
All units a re in um
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RFSW2045D
Truth Table
Measurement Technique
All specifications and typical performances reported in this document were based on data taken with the equipment listed in
the stated manner.
Data was taken using a temperature controlled probe station utilizing 150um pitch GSG probes. The probes were placed on a
ceramic coplanar to microstrip launch. The launch was then wire bonded to the die using two 1 mil bondwires. The spacing
between the launch and the die was 200um, and the bondwire loop height was 100um. the thickness of the test interface was
125um (5mil).
The calibration included the probes and test interfaces, so that the measurement reference plane was at the point of bondwire
attachment. Therefore, all data represents the part and accompanying bondwires.
Insertion Loss, Return Loss, and Isolation data were taken using an Agilent E8363B PNA.
IIP3 and IIP2 data were taken utilizing a pair of Agilent E8257D signal generators and an Agilent E4446A PSA.
Pad Description Interface Schematic
RFIN RF input. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip
transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended.
RF1,
RF2,
RF3,
RF4
RF output. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip
transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended.
V1,
V2,
V3,
V4,
V5,
V6,
V7, V8
DC control for switch operation. Nominal operating voltage is -5V.
GND Provides ground patch for probe measurements.
Control Line RF Path
V1 V2 V3 V4 V5 V6 V7 V8
Low High High Low High Low High Low RFIN to RF1
High Low Low High High Low High Low RFIN to RF2
High Low High Low Low High High Low RFIN to RF3
High Low High Low High Low Low High RFIN to RF4
High Low High Low High Low High Low RFOFF (high isolation)
RFin
RFout
2kohm
5pF
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RFSW2045D
Preferred Assembly Instructions
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.
The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be
applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally
it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense
Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for one hour in an oven
especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au
20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used depends on
the leadframe material used and the particular application. The time at maximum temperature should be kept to a minimum.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4um diameter
gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter
wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the
setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the
die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially
when making RF or ground connections.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage, handling, assembly, and testing.
ESD/MSL Rating
These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22-
A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged
part and therefore no MSL rating applies.
Ordering Information
Part Number Description Delivery Method Quantity
RFSW2045DS2 DC to 20GHz GaAs SP4T Switch Waffle Pack 2 pc
RFSW2045DSB DC to 20GHz GaAs SP4T Switch Waffle Pack 5 pc
RFSW2045DSQ DC to 20GHz GaAs SP4T Switch Waffle Pack 25 pc
RFSW2045D DC to 20GHz GaAs SP4T Switch Waffle Pack 100 pc
