FDMS0312AS N-Channel PowerTrench(R) SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS0312AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design Applications 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D Power 56 MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25C -Continuous (Silicon limited) TC = 25C -Continuous TA = 25C PD TJ, TSTG Units V 20 V 22 70 (Note 1a) -Pulsed 18 A 100 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25C Power Dissipation TA = 25C 33 36 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 3.4 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDMS0312AS Device FDMS0312AS (c)2010 Fairchild Semiconductor Corporation FDMS0312AS Rev.C1 Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS0312AS N-Channel PowerTrench(R) SyncFETTM October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 A IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 18 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.5 -4 mV/C VGS = 10 V, ID = 18 A 4.2 5.0 VGS = 4.5 V, ID = 16 A 5.4 6.2 VGS = 10 V, ID = 18 A, TJ = 125C 5.3 6.8 VDS = 5 V, ID = 18 A 92 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 1365 1815 pF 550 730 pF 70 105 pF 0.5 2.5 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 10 19 VDD = 15 V, ID = 18 A, VGS = 10 V, RGEN = 6 2.3 10 ns 25 40 ns tf Fall Time 6 12 ns Qg Total Gate Charge VGS = 0 V to 10 V 23 31 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 18 A 11 16 3.3 nC 3.7 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.63 0.8 VGS = 0 V, IS = 18 A (Note 2) 0.8 1.2 IF = 18 A, di/dt = 300 A/s V 23 36 ns 20 32 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 33 mJ is based on starting TJ = 25 C, L = 0.3 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. (c)2010 Fairchild Semiconductor Corporation FDMS0312AS Rev.C1 2 www.fairchildsemi.com FDMS0312AS N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TJ = 25C unless otherwise noted 100 VGS = 3.5 V 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 80 5 VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 4 V VGS = 3 V 40 20 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 3 V 4 3 VGS = 3.5 V 2 VGS = 4 V 1 VGS = 4.5 V 0 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 24 ID = 18 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V 0 3.0 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 18 A 18 12 TJ = 125 oC 6 TJ = 25 oC 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS = 5 V TJ = 125 oC 60 TJ = 25 oC 40 TJ = -55 oC 20 0 1 2 3 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2010 Fairchild Semiconductor Corporation FDMS0312AS Rev.C1 3 1.2 www.fairchildsemi.com FDMS0312AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 3000 ID = 18 A 8 VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 20 V 4 Ciss 1000 Coss Crss 100 2 f = 1 MHz VGS = 0 V 0 0 5 10 15 20 40 0.1 25 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 40 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 60 VGS = 10 V VGS = 4.5 V 40 20 1 0.001 0.01 0.1 1 10 0 25 40 50 P(PK), PEAK TRANSIENT POWER (W) 100 s 10 1 ms 0.1 10 ms 100 ms 1s 10 s RJA = 125 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100 150 2000 1000 SINGLE PULSE RJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area (c)2010 Fairchild Semiconductor Corporation FDMS0312AS Rev.C1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 SINGLE PULSE TJ = MAX RATED 100 o Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY rDS(on) 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) o RJC = 3.4 C/W Limited by Package 1 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS0312AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA o RJA = 125 C/W (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2010 Fairchild Semiconductor Corporation FDMS0312AS Rev.C1 5 www.fairchildsemi.com FDMS0312AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS0312AS. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/s 10 5 0 -5 10 20 30 40 50 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFET body diode reverse leakage versus drain-source voltage Figure 14. FDMS0312AS SyncFET body diode reverse recovery characteristic (c)2010 Fairchild Semiconductor Corporation FDMS0312AS Rev.C1 10 6 www.fairchildsemi.com FDMS0312AS N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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