All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8 Rev. 05.1, 2009-02-18
PTF180101M
PTF180101M
Package PG-RFP-10
RF Characteristics
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 16.5 — — dB
Drain Efficiency ηD35 — — %
Intermodulation Distortion IMD — — –28 dBc
High Power RF LDMOS Field Effect Transistor
10 W, 1.0 – 2.0 GHz
Description
The PTF180101M is an unmatched 10-watt GOLDMOS® FET intended for
class AB base station applications in the 1 to 2 GHz band. This LDMOS
device offers excellent gain, efficiency and linearity performance in a small
footprint.
EDGE Performance
VDD = 28v, IDQ = 180 mA, ƒ = 1960 MHz
0.50
0.75
1.00
1.25
1.50
29 30 31 32 33 34 35 36 37
Output Power (dBm)
EVM RMS (Average %)
0
10
20
30
40
Drain Efficiency (%) .
EVM
Efficiency
*See Infineon distributor for future availability.
Features
•Typical EDGE performance
- Average output power = 4.0 W
- Gain = 17 dB
- Efficiency = 31%
- EVM = 1.3 %
•Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 16 dB
- Efficiency = 50%
•Integrated ESD protection:
Human Body Model Class 1 (minimum)
•Excellent thermal stability
•Low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
•Pb-free and RoHS compliant
PTF180101M
Data Sheet 2 of 8 Rev. 05.1, 2009-02-18
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) —0.83 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ150 °C
Total Device Dissipation PD18.8 W
Above 25°C derate by 0.15 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 10 W DC )RθJC 6.5 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTF180101M PG-RFP-10 Molded plastic, SMD 0181
*See Infineon distributor for future availability.
PTF180101M
Data Sheet 3 of 8 Rev. 05.1, 2009-02-18
Typical Performance (data taken in production test fixture)
CW Performance
VDD = 28 V, IDQ = 180 mA, ƒ = 1960 MHz
14
15
16
17
18
19
20
15 20 25 30 35 40 45
Power Output (dBm)
Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
Efficiency
Gain
Two-Tone Performance
VDD = 28 V, IDQ = 180 mA, ƒ = 1960/1961 MHz
-90
-80
-70
-60
-50
-40
-30
-20
25 30 35 40 45
Output Power (dBm), PEP
IMD (dBc)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
3rd order
5th order
7th order
Efficiency
P–1dB Broadband Performance
VDD = 28 V, IDQ = 180 mA
-25
-20
-15
-10
-5
0
5
10
15
20
1920 1940 1960 1980 2000
Frequency (MHz)
Gain & Return Loss (dB)
30
40
50
60
Drain Efficiency (%) .
Efficiency
Gain
Input Return Loss
EDGE Performance
VDD = 28 V, IDQ = 180 mA, ƒ = 1960 MHz
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
29 30 31 32 33 34 35 36 37
Output Power (dBm)
Modulation Spectrum (dBc)
Offset f = 200 kHz
Offset ƒ = 400 kHz
Offset ƒ = 600 kHz
PTF180101M
Data Sheet 4 of 8 Rev. 05.1, 2009-02-18
Typical Performance (cont.)
Z Source Z Load
G
S
D
0.1
0.1
0.1
0
.
2
W
A
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
1900 MHz
2000 MHz
2000 MHz
Z Load
Z Source
1900 MHz
Z0 = 50 Ω
Broadband Circuit Impedance
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-20 0 20 40 60 80 100
Case Temperature (ºC)
Normalized Bias Voltage
0.05
0.28
0.51
0.74
0.97
1.2
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1900 0.80 -3.71 2.89 -1.38
1910 0.79 -3.66 2.88 -1.30
1920 0.79 -3.61 2.87 -1.21
1930 0.78 -3.56 2.85 -1.13
1940 0.77 -3.51 2.84 -1.05
1950 0.77 -3.47 2.82 -0.97
1960 0.76 -3.42 2.81 -0.89
1970 0.75 -3.37 2.80 -0.81
1980 0.75 -3.33 2.78 -0.73
1990 0.74 -3.28 2.77 -0.65
2000 0.74 -3.24 2.76 -0.57
PTF180101M
Data Sheet 5 of 8 Rev. 05.1, 2009-02-18
Reference Circuit
Reference circuit schematic for ƒ = 1990 MHz
Circuit Assembly Information
DUT PTF180101M LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers RO4320 2 oz. copper
Microstrip Electrical Characteristics at 1990 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.059 λ, 50.0 Ω5.69 x 1.60 0.224 x 0.063
l20.093 λ, 50.0 Ω8.48 x 1.60 0.334 x 0.063
l30.016 λ, 50.0 Ω1.09 x 1.60 0.043 x 0.063
l40.129 λ, 9.6 Ω10.77 x 14.22 0.424 x 0.560
l50.026 λ, 9.6 Ω2.13 x 14.22 0.084 x 0.560
l60.153 λ, 78.0 Ω14.48 x 0.71 0.570 x 0.028
l70.194 λ, 78.0 Ω18.39 x 0.71 0.724 x 0.028
l80.014 λ, 12.9 Ω1.27 x 10.16 0.050 x 0.400
l90.236 λ, 12.9 Ω19.91 x 10.16 0.784 x 0.400
l10 0.187 λ, 66.0 Ω17.40 x 0.99 0.685 x 0.039
l11 0.077 λ, 50.0 Ω6.99 x 1.60 0.275 x 0.063
1Electrical characteristics are rounded.
+
RF_IN RF_OUT
R3
2KV
R4
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3K V
R1
LM7805
C1
0.001µF
QQ1
Q1
R5
10V
2KV
1.2KV
l1
l10
220V
R8
DUT
C9
10pF
C6C5
R6
10µF
35V
C4 R7
10µF
35V
C7
10pF
C8
C10
1K V
10V
10pF
4.7pF
4.7pF
C12
C11
C18
L1
C13
10pF 10µF
50V
C14 C15
10pF
C17
10µF
50V
VDD
10pF
0.9pF
0.1µF
l2l3l4l5
W1
½TURN
l6
l7
l8l11l9
0.1µF
C16
R9
1V
VDD
+ + +
180101m_sch
PTF180101M
Data Sheet 6 of 8 Rev. 05.1, 2009-02-18
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)*
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C7 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C16 Capacitor, 0.1µF Digi-Key PCC104BCT-ND
C6, C8, C10, C13, Ceramic capacitor, 10 pF ATC 100B 100
C15, C18
C9 Ceramic capacitor, 0.9 pF ATC 100B 0R9
C11, C12 Ceramic capacitor, 4.7pF ATC 100B 4R7
C14, C17 Tantalum capacitor, 10 µF, 50 V Digi-Key TPSE106K050R0400
L1 Ferrite, 4mm Elna Magnetics BDS3/3/4.6-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip Resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R6 Chip Resistor 10 ohms Digi-Key P10ECT-ND
R7 Chip Resistor 1 k-ohms Digi-Key P1KECT-ND
R8 Chip Resistor 220 ohms Digi-Key P221ECT-ND
W1 Wire 0.250” N/A AUG22, SOLID
*Gerber Files for this circuit available on request
180101M_C_01
180101m_assy
RF_IN RF_OUT
VDD
LM
10
35V
+
C4
R7
C9
R6
C8
C11
W1
C12
C10
R8
R2
Q1
C18
C14 C17
C5
C6
C1
C2
QQ1 R9
C13
C15 C16
SHIM
C7
10
35V
+
R3R5 R1C3 SHIM
L1
R4
PTF180101M
Data Sheet 7 of 8 Rev. 05.1, 2009-02-18
Notes: Unless otherwise specified
1. Dimensions are mm
2. Lead thickness: 0.09
3. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain
Package Outline Specifications
Package PG-RFP-10 (TSSOP-10 Outline)
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
M
PG-RFP-10
0.85 ±0.1
0.09
3 ±0.1
0.42
0.125
6° M
AX.
H
0.1 A
4.9 0.25 A B C
0.08 M
0.22 ±0.05
0.15 MAX.
1.1 MAX.
A
C
0.5
10 6
51
3 ±0.1 B
Index marking
A B C
+0.15
–0.10
+0.08
–0.05
Data Sheet 8 of 8 Rev. 05.1, 2009-02-18
PTF180101M
Confidential—Limited Distribution
Revision History: 2009-02-18 Data Sheet
Previous version: 2005-12-06, Data Sheet
Page Subjects (major changes since last revision)
all Remove Preliminary designation
6Fixed typing error
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Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
