SGP15N120
SGW15N120
Power Semiconductors 1 Rev. 2.6 Nov. 09
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C Eoff Tj Marking Package
SGP15N120 1200V 15A 1.5mJ
150°C GP15N120 PG-TO-220-3-1
SGW15N120 1200V 15A 1.5mJ
150°C SGW15N120 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current
TC = 25°C
TC = 100°C
IC
30
15
Pulsed collector current, tp limited by Tjmax ICpuls 52
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
- 52
A
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse
IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
EAS 85 mJ
Short circuit withstand time2
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
tSC 10
µs
Power dissipation
TC = 25°C
Ptot 198 W
Operating junction and storage temperature Tj , Tstg -55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-220-3-1 PG-TO-247-3
SGP15N120
SGW15N120
Power Semiconductors 2 Rev. 2.6 Nov. 09
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 0.63
Thermal resistance,
junction – ambient
RthJA PG-TO-220-3-1
PG-TO-247-3
62
40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,
IC=1000µA
1200 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
2.5
-
3.1
3.7
3.6
4.3
Gate-emitter threshold voltage VGE(th) IC=600µA,VCE=VGE 3 4 5
V
Zero gate voltage collector current
ICES VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
200
800
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=15A 11 - S
Dynamic Characteristic
Input capacitance Ciss - 1250 1500
Output capacitance Coss - 100 120
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 65 80
pF
Gate charge QGate VCC=960V, IC=15A
VGE=15V
- 130 175 nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE PG-TO-220-3-1
PG-TO-247-3
-
7
13
-
nH
Short circuit collector current2) IC(SC) VGE=15V,tSC≤5µs
100V≤VCC≤1200V,
Tj ≤ 150°C
- 145 - A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
SGP15N120
SGW15N120
Power Semiconductors 3 Rev. 2.6 Nov. 09
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 18 24
Rise time tr - 23 30
Turn-off delay time td(off) - 580 750
Fall time tf - 22 29
ns
Turn-on energy Eon - 1.1 1.5
Turn-off energy Eoff - 0.8 1.1
Total switching energy Ets
Tj=25°C,
VCC=800V,IC=15A,
VGE=15V/0V,
RG=33Ω,
Lσ
1)=180nH,
Cσ
1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 1.9 2.6
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 38 46
Rise time tr - 30 36
Turn-off delay time td(off) - 652 780
Fall time tf - 31 37
ns
Turn-on energy Eon - 1.9 2.3
Turn-off energy Eoff - 1.5 2.0
Total switching energy Ets
Tj=150°C
VCC=800V,
IC=15A,
VGE=15V/0V,
RG=33Ω,
Lσ
1)=180nH,
Cσ
1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
- 3.4 4.3
mJ
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
SGP15N120
SGW15N120
Power Semiconductors 4 Rev. 2.6 Nov. 09
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
10A
20A
30A
40A
50A
60A
70A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0.1A
1A
10A
100A
DC
1ms
200µs
50µs
15µs
tp=2µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 33Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
25W
50W
75W
100W
125W
150W
175W
200W
IC, COLLECTOR CURRENT
25°C 50°C 75°C 100°C 125°C
0A
5A
10A
15A
20A
25A
30A
35A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Ic
Ic
SGP15N120
SGW15N120
Power Semiconductors 5 Rev. 2.6 Nov. 09
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V 7V
0A
10A
20A
30A
40A
5
0A
15V
13V
11V
9V
7V
VGE=17V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V 7V
0A
10A
20A
30A
40A
5
0A
15V
13V
11V
9V
7V
VGE=17V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
IC, COLLECTOR CURRENT
3V 5V 7V 9V 11
V
0A
10A
20A
30A
40A
50A
TJ=-40°C
TJ=+150°C
TJ=+25°C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
IC=30A
IC=15A
IC=7.5A
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
SGP15N120
SGW15N120
Power Semiconductors 6 Rev. 2.6 Nov. 09
t, SWITCHING TIMES
0A 10A 20A 30A 40A
10ns
100ns
1
000ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
0
Ω
25
Ω
50Ω
10ns
100ns
1000ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 33Ω,
dynamic test circuit in Fig.E )
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 15A,
dynamic test circuit in Fig.E )
t, SWITCHING TIMES
-50°C 0°C 50°C 100°C 150°C
10ns
100ns
1000ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
typ.
min.
max.
Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 15A, RG = 33Ω,
dynamic test circuit in Fig.E )
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
SGP15N120
SGW15N120
Power Semiconductors 7 Rev. 2.6 Nov. 09
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A 40A 50
A
0mJ
2mJ
4mJ
6mJ
8mJ
10mJ
12mJ
14mJ
Eon*
Eoff
Ets*
E, SWITCHING ENERGY LOSSES
0Ω25Ω50Ω75Ω
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
Ets*
Eon*
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 33Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 15A,
dynamic test circuit in Fig.E )
E, SWITCHING ENERGY LOSSES
-50°C 0°C 50°C 100°C 150°C
0mJ
1mJ
2mJ
3mJ
4mJ
Ets*
Eon*
Eoff
ZthJC, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms 1
s
10-3K/W
10-2K/W
10-1K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 15A, RG = 33Ω,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(K/W)
τ
, (s)
0.09751 0.67774
0.29508 0.11191
0.13241 0.00656
0.10485 0.00069
SGP15N120
SGW15N120
Power Semiconductors 8 Rev. 2.6 Nov. 09
VGE, GATE-EMITTER VOLTAGE
0nC 50nC 100nC 150nC
0V
5V
10V
15V
20V
UCE=960V
C, CAPACITANCE
0V 10V 20V 30V
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC = 15A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
tsc, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V 15V
0µs
10µs
20µs
30µs
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
10V 12V 14V 16V 18V 20V
0A
50A
100A
150A
200A
250A
300A
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)
SGP15N120
SGW15N120
Power Semiconductors 9 Rev. 2.6 Nov. 09
PG-TO220-3-1
SGP15N120
SGW15N120
Power Semiconductors 10 Rev. 2.6 Nov. 09
SGP15N120
SGW15N120
Power Semiconductors 11 Rev. 2.6 Nov. 09
Figure A. Definition of switching times
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,
v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ
=180nH,
and stray capacity Cσ =40pF.
SGP15N120
SGW15N120
Power Semiconductors 12 Rev. 2.6 Nov. 09
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/19/09.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
