SFH4200 - OSRAM Opto Semiconductors

SFH 4200

SFH 4205

Leistungsstarke IR-Lumineszenzdiode

High Power Infrar ed Emitter

SFH 4200 SFH 4205

2003-12-09 1

Wesentliche Merkmale

• Leistungsstarke GaAs-LED (35mW)

• Hoher Wirkunsgrad bei kleinen Strömen

• Homogene Abstrahlung

• Typische Peakwellenlänge 950nm

• IR Reflow und TTW Löten geeignet

• Feuchte-Empfindlichkeitsstufe 2 nach JEDEC

Standard J-STD-020A

Anwendungen

• Schnelle Datenübertragung mit

Übertragungsraten bis 100 Mbaud

(IR Tastatur, Joystick, Multimed ia)

• Analoge und digitale Hi-Fi Audio- und

Videosignalübertragung

• Alarm- und Sicherungssysteme

• IR Freiraumübertragung

• IR-Scheinwerfer für Kameras

Typ

Type Bestellnummer

Ordering Code Strahlstärkegruppierung 1) (IF = 100mA, tp = 20 ms)

Radiant intensity grouping 1)

Ie (mW/sr)

1) gemessen bei einem Raumwink el Ω = 0. 01 s r

measured at a solid angle of Ω = 0. 01 sr

SFH 4200 Q62702-P978 10.5 (>4)

SFH 4205 Q62702-P5165 10.5 (>4)

Features

• High Power GaAs-LED (35mW)

• High Efficiency at low currents

• Homogeneous Radiation Pattern

• Typical peak wavelength 950nm

• Suitable for IR reflow and TTW soldering

• Moisture Sensitivity Level 2 according to

JEDEC Standard J-STD-020A

Applications

• High data transmission rate up to 100 Mbaud

(IR keyboard, Joystick, Multimedia)

• Analog and digi tal Hi-Fi audi o an d vi deo s ignal

transmission

• Alarm and safety equipment

• IR free air transmission

• IR spotlight for cameras

2003-12-09 2

SFH 4200, SFH 4205

Grenzwerte (TA = 25 °C)

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 …+ 100 °C

Sperrspannung

Reverse voltage VR3V

Durchlaßstrom

Forward current IF (DC) 100 mA

Stoßstrom, tp = 10 µs, D = 0

Surge current IFSM 2.2 A

Verlustleistung

Power dissipation Ptot 180 mW

Wärmewiderstand Sperrschic ht - Umgebung bei

Montage auf FR4 Platine, Padgröße je 16 mm2

Thermal resistance junction - ambient mounted

on PC-board (FR4), padsize 16 mm2 each

Wärmewiderstand Sperrschicht - Lötstelle bei

Montage auf Metall-Block

Thermal resistance junction - soldering point,

mounted on metal block

RthJA

RthJS

450

200

K/W

SFH 4200, SFH 4205

2003-12-09 3

Kennwerte (TA = 25 °C)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

IF = 100 mA, tp = 20 ms

λpeak 950 nm

Spektrale Bandbreite bei 50% von Imax

Spectral bandwidth at 50% of Imax

IF = 100 mA, tp = 20 ms

∆λ 40 nm

Abstrahlwinkel

Half angle ϕ± 60 Grad

deg.

Aktive Chipfläche

Active chip area A0.09 mm2

Abmessungen der aktiven Chipfläche

Dimensions of the active chip area L×B

L×W0.3 ×0.3 mm

Schaltzeiten, Ie von 10% auf 90% und von 90%

auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω

Switching tim es, Ιe from 10% to 90% and from

90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω

tr, tf10 ns

Durchlaßspannung,

Forward voltage

IF = 100 mA, tp = 20 ms

IF = 1 A, tp = 100 µsVF

1.5 (≤ 1.8)

3.2 (≤ 4.3) V

Sperrstrom,

Reverse current

VR = 3 V

IR0.01 (≤ 10) µA

Gesamtstrahlungsfluß,

Total radiant flux

IF = 100 mA, tp = 20 ms

Φe35 mW

Temperaturkoeffizient von Ie bzw. Φe,

IF = 100 mA

Temperature coefficient of Ie or Φe, IF = 100 mA

TCI– 0.44 %/K

Temperaturkoeffizient von VF, IF = 100 mA

Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K

Temperaturkoeffizient von λ, IF = 100 mA

Temperature coefficient of λ, IF = 100 mA TCλ+ 0.2 nm/K

2003-12-09 4

SFH 4200, SFH 4205

Strahlstärke Ie in Achsrichtung

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity Ie in Axial Direction

at a solid angle of Ω = 0.01 sr

Bezeichnung

Parameter Symbol Werte

Values Einheit

Unit

Strahlstärke

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie min.

Ie typ.

10.5 mW/sr

mW/sr

Strahlstärke

Radiant intensity

IF = 1 A, tp = 100 µs

Ie typ. 60 mW/sr

SFH 4200, SFH 4205

2003-12-09 5

Relati ve Sp ectral Emission

Irel = f (λ)

Forward Cu rrent IF = f (VF)

single pu ls e, tp = 20 µs

Radiation Characteristics Irel = f (ϕ

OHF00777

nm800

Ιerel

850 900 950 1000 1100

100

OHF00784

-3

0.5 1 1.5 2 2.5 3 3.5 4.5

-2

-1

0.2

0.4

1.0

0.8

0.6

1.0 0.8 0.6 0.4

0˚10˚20˚40˚ 30˚

OHL01660

50˚

60˚

70˚

80˚

90˚

100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Radiant Intensity

Single pulse , tp = 20 µs

Permissible Pulse Ha ndl i ng

Capability IF = f (τ), TA = 25 °C,

duty cycle D = parameter

Ie 100 mA = f (IF)

e (100 mA)

OHF00809

ΙΙ

10 40

10 10 110 23

10-3

10-2

10-1

102

OHF00040

-5

0.005

0.01

0.02

0.05

-4

-3

-2

-1

1 2

10s

0.1

0.2

0.5

-1

Max. Permissible Forward Current

IF = f (TA)

OHF00359

100

120

20 40 60 80 100 120

˚C

thJA

= 375 K/W

2003-12-09 6

SFH 4200, SFH 4205

Maßzeichnung

Package Outlines

Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h)

SFH 4200

GPLY6724

0.7 (0.028)

0.9 (0.035)

1.7 (0.067)

2.1 (0.083)

0.12 (0.005)

0.18 (0.007)

0.5 (0.020)

1.1 (0.043)

3.3 (0.130)

3.7 (0.146)

0.4 (0.016)

0.6 (0.024)

2.6 (0.102)

3.0 (0.118)

2.1 (0.083)

2.3 (0.091)

Cathode marking

3.0 (0.118)

3.4 (0.134)

(2.4) (0.095)

0.1 (0.004) (typ.)

4˚±1

SFH 4205

GPLY6880

(R1)

Cathode marking

Cathode Anode

(2.4 (0.094))

2.8 (0.110)

2.4 (0.094)

4.2 (0.165)

3.8 (0.150)

0.9 (0.035)

1.1 (0.043)

spacing

2.54 (0.100)

0.7 (0.028)

(2.85 (0.112))

(1.4 (0.055))

(0.3 (0.012))

3.4 (0.134)

3.8 (0.150)

4.2 (0.165)

(2.9 (0.114))

SFH 4200, SFH 4205

2003-12-09 7

Zusätzliche Informationen über allgem eine Lötbeding ungen erhalten S ie auf Anf r age.

For addi tio nal information on general soldering co ndit i ons please con ta ct us .

Published by OSRAM Opto Semiconductors GmbH & Co. OHG

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.

2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain

and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.

Löthinweise

Soldering Conditions

Bauform

Types Tauch-, Schwall- und Schlepplötung

Dip, Wave and Drag Soldering Reflowlötung

Reflow Soldering

Lötbadtemperatur

Temperature of

the Soldering Bath

Maximal zulässige

Lötzeit

Max. Perm.

Soldering Time

Lötzonen-

temperatur

Temperature of

Soldering Zone

Maximale

Durchlaufzeit

Max. Transit Time

TOPLED

SIDELED 260 °C 10 s 245 °C10s