Features
· Broadband performance
· Low insertion loss; 1.6dB typ at 2GHz
· Ultra low DC power consumption
· Fast switching speed; 3ns typical
Description
The P35-4230-000-200 is a high performance Gallium Arsenide single pole single throw broadband RF switch MMIC. It is
suitable for use in broadband communications and instrumentation applications. A 50Ωtermination is presented at the
isolated output of the switch. Control is effected by the application of complimentary 0V and -5V levels to the control lines
in accordance with the truth table below.
This die is fabricated using MOC's 0.5µm gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability. This device is also available packaged in a ceramic package.
Electrical Performance
Ambient temperature = 22±3°C , ZO= 50Ω, Control voltages = 0V/-5V unless otherwise stated
Notes
1. Return Loss measured in low loss switch state.
2. Input power at which insertion loss compresses by 1dB.
GaAs MMIC SPST Terminated
Switch, DC - 4GHz
P35-4230-000-200 Marconi Optical Components
Parameter Conditions Min Typ Max Units
Insertion Loss DC - 2GHz -1.6 1.8 dB
2 - 4GHz -2.1 2.9 dB
Isolation DC - 2GHz 30 35 -dB
2 - 4GHz 25 30 -dB
Input Return Loss1 DC - 2GHz 15 16 -dB
2 - 4GHz 12 14 -dB
Output Return Loss1 DC - 2GHz 15 16 -dB
2 - 4GHz 12 14 -dB
1dB power compression point2 0/-5V Control; 2GHz -23 -dBm
0/-8V Control; 2GHz -30 -dBm
Switching Speed 50% Control to 10%90%RF -3-ns
Typical Performance at 22°C
Absolute Maximum Ratings
Max control voltage -8V
Max I/P power +33 dBm
Operating temperature -60°C to +125°C
Storage temperature -65°C to +150°C
Insertion Loss Isolation
Input Return Loss Output Return Loss
P35-4230-000-200 Marconi Optical Components
Package Outline Electrical Schematic
Switching Truth Table
Die size 0.82 x 0.69mm
Bond pad size 100µm x 100µm
Die thickness: 210µmA B RF IN-RF OUT
-5V 0V Isolated
-5V 0V Isolated
Chip Handling, Mounting and Bonding
The back of the chip is gold metallized and can be die-attached manually onto gold, eutectically with Au-Sn (80:20) or with
low temperature conductive epoxy. The maximum allowable chip temperature is 310°C for 2 minutes. Bonds should be
made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with
the chip face at 225°C to 275°C with a heated thermosonic wedge (approx. 125°C) and a maximum force of 60 grams.
Ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The
length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground
pads.
The data and product specifications are subject to change without notice. These devices
should not be used for device qualification and production without prior notice.
© Marconi Optical Components Ltd 2001 www.moc.marconi.com
MOC, Caswell, Towcester, Northants, NN12 8EQ, Tel:+44 1327 356468 Fax +44 1327 356698
462/SM/01745/200 Iss 1/2
Ordering Information: P35-4230-000-200
