DB92481m-AAS/A1
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The IS605, IS606 are optically coupled isolators
consisting of infrared light emitting diode and a
light activated silicon controlled rectifier in a
standard 6pin dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh Surge Anode Current (5.0 A)
lHigh Blocking Voltage (400V*1, 625V*1)
lLow Turn on Current (5mA typical)
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
l10A, T2L compatible, Solid State Relay
l25W Logic Indicator Lamp Driver
l400V Symmetrical transistor coupler
IS605, IS606
PHOTON COUPLED ISOLATOR Ga As
INFRARED EMITTING DIODE &
LIGHT ACTIVATED SCR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Forward Current (Peak)
(1µs pulse, 300pps) 3A
Reverse Voltage 6V
Power Dissipation 100mW
DETECTOR
Peak Forward Voltage
IS605 400V*1
IS606 625V*1
Peak Reverse Gate Voltage 6V
RMS On-state Current 300mA
Peak On-state Current
(100µs, 1% duty cycle) 10A
Surge Current (10ms) 5A
Power Dissipation 300mW
*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (RGK < 56k)
6/12/00
1
34
6
2 5
0.26
0.5
Dimensions in mm
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
10.46
9.86
0.6
0.1 1.25
0.75
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Voltage (VR)3VIR = 10µA
Output Peak Off-state Voltage (VDM )
(note 2) IS605 400 VRGK= 10kΩ, ID=A
IS606 625 VRGK= 10kΩ, ID=A
Peak Reverse Voltage (VRM )
IS605 400 VRGK= 10kΩ, ID=A
IS606 625 VRGK= 10kΩ, ID=A
On-state Voltage (VTM )1.1 1.3 VITM = 300mA
Off-state Current (IDM )
IS605 2µARGK= 10kΩ, IF = 0,
VDM= 400V
IS606 2µARGK= 10kΩ, IF = 0,
VDM= 625V
Reverse Current (IR )
IS605 2µARGK= 10kΩ, IF = 0,
VDM= 400V
IS606 2µARGK= 10kΩ, IF = 0,
VDM= 625V
Coupled Input Current to Trigger ( IFT ) (note 2)
IS605 11 mA VAK=100V, RGK=27k
IS606 14 mA VAK=100V, RGK=27k
Turn on Time ( ton )50 µsRGK=27kΩ, IF=30mΑ,
VAK=20V, RL=200
Coupled dv/dt, Input to Output (dv/dt) 500 V/µs
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 1011 VIO = 500V (note 1)
Input-output Capacitance Cf 2pF V = 0, f =1MHz
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92481m-AAS/A1
6/12/00
0 0.5 1 1.5 2 2.5 3
Forward voltage VF ( V )
Input Current to Trigger vs.
Ambient Temperature
1 2 4 6 10 20 40 60 100 200 400 1000
Pulse width ( µs )
Forward current I F (mA)
Input Characteristics IF vs. VF
Normalized input current to trigger I FT
0 10 20 30 40 50 60 70 80 90 100
Input current IF (mA)
Turn on time t on (
µ
s)
Turn on Time vs. Input Current
0.1
0.1
0.2
Anode to cathode voltage VAK ( V )
Input Current to Trigger vs.
Anode to Cathode Voltage
Normalized input current to trigger I FT
0.1
0.2
1 5 10 50 100 200
0.4
1.0
2
4
10
20
40
100 Normalized to
VAK = 50V
RGK =10k
TA = 25 °C
RGK =300
10k
27k
56k
1k
RGK =300
10k
27k
56k
1k
Normalized to VAK = 50V,
RGK =10kΩ, TA = 25 °C
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )
Normalized input current to trigger I FT
0.1
0.2
0.4
1.0
2
4
10
12
Input Current to Trigger Distribution
vs. Ambient Temperature
Ambient temperature TA ( °C )
-40 -20 0 20 40 60 80 100
Normalized to
VAK = 50V
RGK =10k
TA = 25 °C
90th percentile
10th percentile
Input Current to Trigger vs.
Pulse Width
Normalized to
VAK = 50V
RGK =10k
TA = 25 °C
RGK =300
1k
10k
27k
56k
Normalized input current to trigger I FT
0.2
0.4
1
2
4
10
20
40
100
0.1
0.4
1
2
4
10
4
6
8
10
12
14
0
16
18
20
22
24
2
VAK = 50V
ton = td + tr
tr = 1µs
RGK=1k
10k
56k
0.2
0.4
1
2
4
10
20
40
100
100°C -55°C
25°C
DB92481m-AAS/A16/12/00
0 1 2 3 4
On state voltage VT ( V )
Maximum Transient Thermal Impedence
0 0.2 0.4 0.6 0.8 1.0
On state current ( Α )
On state current I T (A)
On State Characteristics
Normalized forward current off state ( I D )
25 50 75 100
Critical rate of rise applied forward voltage dV/dt (V/
µ
s)
dV/dt vs. Ambient temperature
Holding Current vs. Ambient
Temperature
Holding current IH (
µ
A)
10
Normalized to
VAK = 50V
RGK =10k
TA = 25 °C
RGK =300
10k
27k
56k
1k
0.001 0.01 0.1 1 2 4 10 100
Time (seconds)
Transient thermal impedance ( °C / Watt )
Off State Forward Current vs.
Ambient Temperature
Ambient temperature TA ( °C )
0 25 50 75 100
Normalized to
VAK = 50V
TA = 25 °C
On State Current vs. Maximum
Allowable Temperature
Maximum allowable temperature ( °C )
10
100
0
1
2
4
10
20
40
100
200
400
2000
1000
4000
10000
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device.
Junction to lead
Junction to ambient
1
2
4
10
20
40
100
200
400
1000
VAK = 625V
VAK = 50V
20
40
100
200
400
1000
4000
10000
2000
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
1. 2. 4.3.
20
30
40
50
60
70
80
90
RGK =300
10k
27k
56k
1k
0.1
1
10
40
100
4
0.4
400
1000
Ambient temperature TA ( °C )
Junction temperature = 25°C
Junction temperature = 100°C
Increases to forward
breakover voltage
0.01
0.02
0.04
0.1
0.2
0.4
1
2
DB92481m-AAS/A1
6/12/00