DSI 45-16AR VRRM = 1600 V IF(AV)M = 48 A Rectifier Diode VRSM V 1700 VRRM Type A ISOPLUS247TM C V 1600 C DSI 45-16AR TAB A A = Anode, C = Cathode Symbol Conditions IF(AV)M TC = 105C; 180 sine IFSM TVJ = 45C; VR = 0 V; I2t Features Maximum Ratings 48 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 475 520 A A TVJ = 150C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 380 420 A A TVJ = 45C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1120 1120 A2s A2 s TVJ = 150C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 720 720 A2s A2 s -40...+150 150 -40...+150 C C C 2500 V~ 6 g TVJ TVJM Tstg * International standard package * Planar glassivated chips * Isolated and UL registered * Epoxy meets UL 94V-0 Applications * * * * Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages VISOL 50/60 Hz, RMS, t = 1 minute, leads-to-tab Weight typical Symbol Conditions IR TVJ = TVJM; VR = VRRM 3 mA VF IF = 40 A; TVJ = 25C 1.18 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 8 V m RthJC RthCH DC current typical 0.55 0.2 K/W K/W * * * * Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Characteristic Values Data according to IEC 60747 SYM A A1 A2 b b1 b2 c D E e L L1 L2 Q R S T U INCHES MIN MAX .190 .205 .090 .100 .075 .085 .045 .055 .084 .075 .123 .115 .031 .024 .840 .819 .620 .635 .430 BSC .800 .780 .150 .170 0 .100 .220 .244 .170 .190 .540 .520 .640 .620 .080 .065 MILLIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 10.92 BSC 20.32 19.81 4.32 3.81 0 2.54 6.20 5.59 4.32 4.83 13.72 13.21 16.26 15.75 1.65 2.03 IXYS reserves the right to change limits, test conditions and dimensions. Dimensions in mm (1 mm = 0.0394") NOTE: 1.This drawing will meet all dimensionsrequirement of JEDEC outlineTO-247ADexcept screw hole. 2.Leadsterminals are Pb-free solder plated. 3.Bottom heatsink (4) is pre-Ni plated and electrically isolated 2,500V rfom pin 1, 2, and 3. E A Q S A2 U R T D 4 1 2 3 L1 L2 L b2 b1 b A1 e c 20090529a 1-2 (c) 2009 IXYS All rights reserved http://store.iiic.cc/ DSI 45-16AR 70 500 A 104 50Hz, 80% VRRM 2 As A 60 400 IFSM TVJ=150C TVJ= 25C IF 50 VR = 0 V I2t TVJ = 45C 300 40 TVJ = 45C 103 30 200 20 TVJ = 150C TVJ = 150C 100 10 0 0.0 0.4 1.2 V 0.8 102 0 0.001 1.6 0.01 0.1 VF s 1 1 2 3 t Fig. 1 Forward current versus voltage drop per diode 4 5 6 78 ms910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 100 50 RthHA : W A 0.5 K/W 1.0 K/W 1.5K/W 2.0 K/W 3.0 K/W 4.0 K/W 6.0 K/W 80 Ptot 60 40 IF(AV)M 30 40 20 20 10 0 0 0 10 20 30 40 A 0 20 40 60 80 100 120 140 C Id(AV)M Fig. 4 0 Tamb Power dissipation versus direct output current and ambient temperature, sine 180 20 40 60 80 100 120 140 C TC Fig. 5 Max. forward current versus case temperature 0.6 K/W ZthJC 0.4 Constants for ZthJC calculation: 0.2 0.0 0.001 DSI45 0.01 0.1 s 1 Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. i Rthi (K/W) ti (s) 1 2 3 4 0.1633 0.2517 0.0933 0.04167 0.016 0.118 0.588 2.6 10 t 20090529a 2-2 (c) 2009 IXYS All rights reserved http://store.iiic.cc/