1
PNZ163NC (PN163-(NC))
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : tr = 4 µs (typ.)
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
Phototransistors
;;
;;
;
;
(Input pulse)
(Output pulse)
50ΩR
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT 10%
90%
Sig.IN
t
d
t
r
t
f
3.0±0.3
2-0.5±0.15 0.3±0.15
1.1
Not soldered 2.15 max. 0.8
2.4 0.8 max.1.1
3.5±0.312 min.
Unit : mm
1: Collector
2: Emitter
2.54 12
1.4±0.2
0.50.9
1.95±0.25
ø1.1
R0.5
Gate the rest
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
VCEO 20 V
Collector current IC20 mA
Collector power dissipation
PC50 mW
Operating ambient temperature
Topr –25 to +85 ˚C
Storage temperature Tstg –30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current ICEO VCE = 10V 0.2 µA
Sensitivity to infrared emitters
SIR*1 VCE = 10V, H = 15µW/cm2640µA
Peak sensitivity wavelength
λPVCE = 10V 850 nm
Acceptance half angle θ
Measured from the optical axis to the half power point
25 deg.
Rise time tr*2 VCC = 10V, ICE(L) = 5mA 4 µs
Fall time tf*2 RL = 100Ω4µs
Collector saturation voltage
VCE(sat) ICE(L) = 3µA, H = 15µW/cm20.5 V
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Switching time measurement circuit
Note) The part number in the parenthesis shows conventional part number.
2
Phototransistors PNZ163NC
tr — ICE(L)
Collector photo current ICE(L) (mA)
Rise time tr (µs)
VCC = 10V
Ta = 25˚C
10 4
10 3
10 2
10
1
10 –1 10 –1 10 10 2
110 –2
tf — ICE(L)
Collector photo current ICE(L) (mA)
Fall time tf (µs)
VCC = 10V
Ta = 25˚C
10 4
10 3
10 2
10
1
10 –1 10 –1 10 10 2
110 –2
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength λ (nm)
Relative sensitivity S (%)
700 800 900 1000 1100 1200
0
600
VCE = 10V
Ta = 25˚C
VCE = 10V
T = 2856K
ICE(L) — Ta
10 2
1
10
Ambient temperature Ta (˚C )
– 40 0 40 80 120
10 –1
Collector photo current ICE(L) (mA)
ICEO — Ta
10 2
1
10 –1
10
Ambient temperature Ta (˚C )
VCE = 10V
Dark current ICEO (nA)
10 –2
– 20 0 40 8020 60 100
PC — Ta
60
50
40
30
20
10
Ambient temperature Ta (˚C )
Collector power dissipation PC (mW)
0 20406080100
0
– 20
ICE(L) — VCE
3.0
2.5
2.0
1.0
0.5
1.5
0
Collector to emitter voltage VCE (V)
Collector photo current ICE(L) (mA)
02016812424
Ta = 25˚C
T = 2856K
ICE(L) — L
10 2
10
1
Illuminance L (lx)
Collector photo current ICE(L) (mA)
10 10 2 10 3
10 –2
10 –1
1
VCE = 10V
Ta = 25˚C
T = 2856K
0˚ 10˚ 20˚
30˚
40˚
50˚
60˚
70˚
80˚
90˚
Directivity characteristics
20
90
100
80
70
60
50
40
30
Relative sensitivity S (%)
500 lx
L = 1000 lx
100 lx
RL = 1kΩ
500Ω
100Ω
RL = 1kΩ
500Ω
100Ω
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2001 MAR
