MCH3421
No.7997-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7997
MCH3421
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID0.8 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 3.2 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 0.9 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 100 V
Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=400mA 0.5 1.0 S
RDS(on)1 ID=400mA, VGS=10V 0.68 0.89 Ω
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=400mA, VGS=4V 0.85 1.2 Ω
Input Capacitance Ciss VDS=20V, f=1MHz 165 pF
Output Capacitance Coss VDS=20V, f=1MHz 13 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 8.0 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns
Rise Time trSee specified Test Circuit. 3 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 22 ns
Fall T ime tfSee specified Test Circuit. 10 ns
Marking : KW Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N2504 TS IM TB-00000253
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
MCH3421
No.7997-2/4
Continued from preceding page.
Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=50V, VGS=10V, ID=0.8A 4.8 nC
Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=0.8A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=0.8A 0.9 nC
Diode Forward Voltage VSD IS=0.8A, VGS=0 0.86 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm
2167A
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0.250.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
12
3
12
3
(Bottom view)
(Top view)
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=0.4A
RL=125Ω
VDD=50V
VOUT
MCH3421
VIN
10V
0V
VIN
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
0.4
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
--60 --40 --20 0 20 40 60 80 100 120 140 160
0
0
0.2
0.4
0.8
1.0
0.4
0.6
0
0.8 1.2 1.61.40.2 0.6 1.0
ID -- VDS
IT05995
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ID -- VGS
IT05996
RDS(on) -- Ta
IT05998
0 4 8 12 16 202 6 10 14 18
RDS(on) -- VGS
IT05997
2.0
1.8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
75°C
Ta=25°C
--25°C
Ta=25°C
ID=0.4A
ID=0.4A, VGS=4V
ID=0.4A, VGS=10V
8.0V
6.0V
10.0V
5.0V
4.0V
3.5V
VGS=3.0V
VDS=10V
Ambient Temperature, Ta -- °C
MCH3421
No.7997-3/4
IT07674
2
3
2
3
5
7
5
7
2
3
5
7
2
3
5
7
0.1
1.0
0.01
0.001 23 57 23 57 23 57 2
1.00.1 10 100
IDP=3.2A
ID=0.8A
Operation in this
area is limited by RDS(on).
100µs
100ms
1ms
10ms
DC operation (Ta=25
°C)
0
020 40
0.2
0.4
0.6
0.8
0.9
1.0
60 80 100 120 140 160
IT07671
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A Ciss, Coss, Crss -- pF
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Drain Current, ID -- A
Switching Time, SW Time -- ns
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
0123456
0
2
4
6
8
10
VGS -- Qg
IT06003
1.0
7
5
3
2
10
7
5
3
2
100
SW Time -- ID
IT06001
IT05999
0.1
23 57 1.0
23 2357
0.01 5
0.1 21.0
23 57
1.0
0.1
7
5
3
2
3
2
7
5
yfs-- ID
0 5 10 15 20 25 30
1.0
10
100
7
5
3
2
5
3
2
7
5
3
2
Ciss, Coss, Crss -- VDS
IT06002
IT06000
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1.0
7
5
3
2
7
5
3
2
5
3
2
IF -- VSD
PD -- Ta
A S O
VDS=10V VGS=0
75
°
C
25°C
Ta= --25°C
--25
°
C
25°C
Ta=75°C
td(on)
td(off)
tf
tr
VDD=50V
VGS=10V Ciss
Coss
Crss
f=1MHz
VDS=50V
ID=0.8A
<10µs
Mounted on a ceramic board (900mm
2
✕0.8mm)
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
MCH3421
No.7997-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2004. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the MCH3421 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.