AWT6651 High Efficiency ProEficientTM UMTS2100 (Band 1) LTE/WCDMA/TD-SCDMA Linear PAM DATA SHEET - Rev 2.3 FEATURES * WCDMA/HSPA, LTE and TD-SCDMA Compliant * High Efficiency (R99 waveform): * 48% @ POUT = +28.5 dBm * 25% @ POUT = +17 dBm in LPM, without DC/ DC Converter AWT6651 * Simple Calibration with only 2 Bias Modes * Optimized for SMPS Supply * Low Leakage Current in Shutdown Mode: <5 A * Internal Voltage Regulator * Integrated "daisy chainable" directional couplers with CPLIN and CPLOUT Ports * Optimized for a 50 System * Internal DC blocks on IN/OUT RF ports 10 Pin 3 mm x 3 mm x 0.9 mm Surface Mount Module * 1.8 V Control Logic * RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS * Wireless Handsets and Data Devices for: * WCDMA/HSPA/LTE IMT-Band * TD-SCDMA 1.8/2.0 GHz Band * TD-LTE Bands 33, 34, 39 GND at Slug (pad) PRODUCT DESCRIPTION The AWT6651 PA is designed to provide highly linear VBATT output for WCDMA, LTE and TD-SCDMA handsets and data devices with high efficiency at both high and low power modes. This ProEficientTM PA can be used RFIN with an external switch mode power supply (SMPS) to improve its efficiency and reduce current consumption further at medium and low output powers. The device is manufactured on an advanced InGaP HBT VMODE2 (N/C) MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. There are two selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode VMODE1 with low leakage current, which increases handset talk and standby time. The self-contained 3 mm x 3 mm x 0.9 mm surface mount package incorporates matching VEN networks optimized for output power, efficiency, and linearity in a 50 system. 1 10 2 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT 3 CPL Bias Control Voltage Regulation Figure 1: Block Diagram 07/2014 VCC AWT6651 VBATT 1 10 RFIN 2 9 RFOUT N/C 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 N/C No Connection 4 VMODE1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC Mode Control Voltage 1 PA Enable Voltage Coupler Output Supply Voltage DATA SHEET - Rev 2.3 07/2014 VCC AWT6651 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN TYP MAX UNIT RF Input (PIN) - 0 10 dBm VCC 0 3.4 5 V VBATT 0 3.4 6 V Control Voltage (VENABLE, VMODE) 0 1.8 3.5 V Storage Temperature (TSTORAGE) -40 25 150 C Functional operation to the specified performance is not implied under these conditions. Operation of any single parameter in excess of the absolute ratings may cause permanent damage. No damage occurs if one parameter is set at the limit while all other parameters are set within normal operating ranges. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) 1920 1880 2010 - 1980 1920 2025 MHz UMTS Band 1 TD-SCDMA Band TD-SCDMA Band Supply Voltage (VCC) +0.5 +3.4 +4.4 V POUT < +28.5 dBm Battery Voltage (VBATT) +3.1 +3.4 +4.4 V POUT < +28.5 dBm Enable Voltage (VENABLE) +1.35 0 +1.8 0 +3.1 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE1) +1.35 0 +1.8 0 +3.1 +0.5 V Low Bias Mode High Bias Mode RF Output Power (POUT) (1) R99 WCDMA, HPM HSPA (MPR = 0), HPM LTE, HPM R99 WCDMA, LPM HSPA (MPR = 0), LPM LTE, LPM 27.7 26.45 26.45 16.2 15.2 15.2 28.5 27.25 27.25 17 16 16 28.5 27.25 27.25 17 16 16 dBm RF Output Power (POUT) (1) TD-SCDMA (HPM) TD-SCDMA (LPM) 26.7 15.7 27.5 16.5 27.5 16.5 dBm Case Temperature (TC) -30 - +90 C 3GPP TS 34.121-1, Rel 8 Table C.11.1.3, for WCDMA Subtest 1 TS 36.101 Rel 8 for LTE 3GPP TS 25.62 Section 6.2.1 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB. 3 DATA SHEET - Rev 2.3 07/2014 AWT6651 Table 4: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 system, unless otherwise specified) PARAMETER MIN TYP MAX Gain 24.5 12 27 20 15 30 17.5 ACLR1 at 5 MHz offset (1) - -40 -40 -42 ACLR2 at 10 MHz offset (1) - Power-Added Efficiency (1) UNIT COMMENTS POUT VCC VMODE1 dB +28.5 dBm +17 dBm +17 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V -36 -36 -36 dBc +28.5 dBm +17 dBm +17 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V -52 -55 -55 -47 -47 -47 dBc +28.5 dBm +17 dBm +17 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V 43 20 17 48 25 23 - % +28.5 dBm +17 dBm +17 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V Quiescent Current (Icq) Low Bias Mode - 17 - mA through VCC pin, VMODE1 = +1.8 V Mode Control Current - 0.1 - mA through VMODE pin, VMODE1 = 1.8 V Enable Current - 0.1 - mA through VENABLE pin BATT Current - 2.5 - mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - 4 10 A VBATT = +4.4 V, VCC = +4.4 V VENABLE = 0 V, VMODE1 = 0 V Noise in Receive Band (2) - -135 -140 - dBm/Hz Harmonics 2fO 3fO, 4fO - -43 -55 - dBc Input Impedance - - 2:1 VSWR Coupling Factor 18 20 23 dB Directivity - 20 - dB Coupler IN-OUT Daisy Chain Insertion Loss - <0.25 - dB 698 to 2620 MHz Pin 8 to 6 Shutdown Mode POUT < +28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Spurious Output Level (all suprious outputs) Load mismatch stress with no permanent degradation or failure Phase Delta (HPM-LPM) - - -70 dBc 8:1 - - VSWR - 10 - Deg Notes: (1) ACLR and Efficiency measured at 1950 MHz. (2) Noise measured at 2110 MHz to 2170 MHz. 4 DATA SHEET - Rev 2.3 07/2014 POUT < +28.5 dBm, VMODE1 = 0 V POUT < 17 dBm, VMODE1 = +1.8 V POUT < +28.5 dBm Applies over full operating range AWT6651 Table 5: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 system, unless otherwise specified) COMMENTS PARAMETER MIN TYP MAX UNIT Gain 24.5 12 27 20 15 30 17.5 dB +27.25 dBm 3.4 V +16 dBm 1.5 V +16 dBm 3.4 V 0V 0V 1.8 V ACLR E-UTRA (1) at 10 MHz offset - -38 -38 -38 -34 -34 -34 dBc +27.25 dBm 3.4 V +16 dBm 1.5 V +16 dBm 3.4 V 0V 0V 1.8 V ACLR1 UTRA (1) at 7.5 MHz offset - -39 -39 -39 -36 -36 -36 dBc +27.25 dBm 3.4 V +16 dBm 1.5 V +16 dBm 3.4 V 0V 0V 1.8 V ACLR2 UTRA (1) at 12.5 MHz offset - -60 -60 -60 -48 -48 -48 dBc +27.25 dBm 3.4 V +16 dBm 1.5 V +16 dBm 3.4 V 0V 0V 1.8 V Power-Added Efficiency (1) - 41 20 19 - % +27.25 dBm 3.4 V +16 dBm 1.5 V +16 dBm 3.4 V 0V 0V 1.8 V Noise emissions B34 - -38 - LTE NS_05 PHS emissions - -48 - Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure VCC VMODE1 2010 - 2025 MHz, 100 RB QPSK dBm/MHz LTE signal centered at 1970 MHz at LTE max power dBm/ 300 kHz - - <-70 dBc 8:1 - - VSWR Notes: (1) ACLR and Efficiency measured at 1950 MHz. 5 POUT DATA SHEET - Rev 2.3 07/2014 1884.5 - 1919.6 MHz POUT < +27.25 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range AWT6651 Table 6: Electrical Specifications - TD-SCDMA Operation (TC = +25 C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 system, unless otherwise specified) PARAMETER MIN TYP MAX UNIT Gain 24.5 12 27 20 15 30 17.5 ACLR1 at 1.6 MHz offset - -42 -42 -46 ACLR2 at 3.2 MHz offset - Power-Added Efficiency COMMENTS POUT VCC VMODE1 dB +27.5 dBm +16.5 dBm +16.5 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V -36 -36 -36 dBc +27.5 dBm +16.5 dBm +16.5 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V -55 -55 -64 -48 -48 -48 dBc +27.5 dBm +16.5 dBm +16.5 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V 35 15 15 42 20 19 - % +27.5 dBm +16.5 dBm +16.5 dBm 3.4 V 1.5 V 3.4 V 0V 0V 1.8 V Quiescent Current (Icq) Low Bias Mode - 20 - mA VMODE1 = +1.8 V Mode Control Current - 0.1 - mA through VMODE pin, VMODE1 = +1.8 V Enable Current - 0.1 - mA through VENABLE pin, VEN = +1.8 V BATT Current - 2.5 - mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - <5 10 A VBATT = +4.4 V, VCC = +4.4 V, VENABLE = 0 V, VMODE1 = 0 V Harmonics 2fO 3fO, 4fO - -43 -55 - dBc POUT < +27.5 dBm Input Impedance - - 2:1 VSWR 8:1 - - VSWR Load mismatch stress with no permanent degradation or failure 6 DATA SHEET - Rev 2.3 07/2014 Applies over full operating range AWT6651 Table 7: Electrical Specifications - TD-LTE Operation, Band 39 (10 MHz QPSK, 12 RB, Start = 0) (TC = +25 C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 system) PARAMETER MIN TYP MAX UNITS Operating Frequency (f) 1900 1880 - 1920 1920 MHz UMTS Band 33 UMTS Band 39 26 15.5 27 16 27 16 dBm TS 36.101 Rel 8 for LTE 24.5 12 27 15 30 17.5 dB HPM, POUT = 27 dBm LPM, POUT = 16 dBm LTE to LTE, E-UTRA (2) - -37 -40 -36 -36 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm UTRA ACLR1 (2) - -38 -40 -36 -36 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm UTRA ACLR2 (2) - -60 -60 -42 -42 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm Power-Added Efficiency (2) - 34 22 - % HPM, POUT = 27 dBm LPM, POUT = 16 dBm Quiescent Current (Icq) Low Bias Mode - 8 - mA through VCC pin - - -35 -50 dBc POUT +27 dBm POUT +27 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions RF Output Power (Pmax) (1) LTE (MPR = 0), HPM LTE (MPR = 0), LPM Gain Harmonics 2fO 3fO, 4fO Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -70 dBc 8:1 - - VSWR Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 1900 MHz. 7 DATA SHEET - Rev 2.3 07/2014 COMMENTS Applies over full operating range AWT6651 Table 8: Electrical Specifications - TD-LTE Operation, Band 34 (10 MHz QPSK, 12 RB, Start = 0) (TC = +25 C, VCC = VBATT = +3.4 V, VEN = 0 V, 50 system) PARAMETER MIN TYP MAX UNITS 2010 - 2025 MHz Band 34 25 15.5 26 16 26 16 dBm TS 36.101 Rel 8 for LTE 24.5 12 27 15 30 17.5 dB HPM, POUT = 26 dBm LPM, POUT = 16 dBm LTE to LTE, E-UTRA (2) - -38 -38 -36 -36 dBc HPM, POUT = 26 dBm LPM, POUT = 16 dBm UTRA ACLR1 (2) - -39 -38 -36 -36 dBc HPM, POUT = 26 dBm LPM, POUT = 16 dBm UTRA ACLR2 (2) - -62 -60 -42 -42 dBc HPM, POUT = 26 dBm LPM, POUT = 16 dBm Power-Added Efficiency (2) - 35 23 - % HPM, POUT = 26 dBm LPM, POUT = 16 dBm Quiescent Current (Icq) Low Bias Mode - 8 - mA through VCC pin - - -35 -50 dBc POUT +26 dBm POUT +26 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Operating Frequency (f) RF Output Power (Pmax) LTE (MPR = 0), HPM LTE (MPR = 0), LPM (1) Gain Harmonics 2fO 3fO, 4fO Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -70 dBc 8:1 - - VSWR Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 2017.5 MHz. 8 COMMENTS DATA SHEET - Rev 2.3 07/2014 Applies over full operating range AWT6651 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VENABLE and VMODE1 voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to VMODE1. The Bias Control table lists the recommended modes of operation for various applications. VMODE2 is not necessary for this PA. Two operating modes are available to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At around 17 dBm output power, the PA should be "Mode Switched" to Low power mode for lowest quiescent current consumption. Vcontrols Venable/Vmode(s) On Sequence Start T_0N = 0 Rise/Fall Max 1S Defined at 10% to 90% of Min/Max Voltage Off Sequence Start T_0FF = 0 ON Sequence OFF Sequence RFIN notes 1,2 VEN VCC note 1 T_0N+1S T_0N+3S Referenced After 90% of Rise Time T_0FF+2S T_0FF+3S Referenced Before10% of Fall Time Figure 3: Recommended ON/OFF Timing Sequence Notes: (1) Level might be changed after RF is ON. (2) RF OFF defined as PIN -30 dBm. (3) Switching simultaneously between VMODE and VEN is not recommended. 9 DATA SHEET - Rev 2.3 07/2014 AWT6651 Table 9: Bias Control (WCDMA and LTE) POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT High power (High Bias Mode) > +16 dBm High +1.8 V 0V 1.5 - 4.35 V > 3.1 V Med/low power (Low Bias Mode) +17 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1 V - Shutdown 0V 0V 0.5 - 4.35 V > 3.1 V APPLICATION Shutdown Table 10: Bias Control (TD-SCDMA) POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT TD-SCDMA - high power (High Bias Mode) > +15 dBm High +1.8 V 0V 1.5 - 4.35 V > 3.1 V TD-SCDMA - med/low power (Low Bias Mode) +16 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1 V - Shutdown 0V 0V 0.5 - 4.35 V > 3.1 V APPLICATION Shutdown 10 DATA SHEET - Rev 2.3 07/2014 AWT6651 VBATT VCC C2 2.2 F C1 33pF GND at slug 1 2 RFIN 3 VMODE2 VMODE1 VEN 10 VBATT VCC RFIN RFOUT N/C 4 VMODE1 5 VEN CPLIN 8 GND 7 VMODE1 VEN GND GND VMODE2 VCC GND GND C1 RFOUT C4 C3 CPLOUT VBATT Figure 4: Evaluation Board Schematic RFIN CPLIN Figure 5: Evaluation Board Layout 11 DATA SHEET - Rev 2.3 07/2014 C4 2.2F ceramic 9 CPLOUT 6 C2 C3 0.1F RFOUT CPLIN CPLOUT AWT6651 ProEficientTM The AWT6651 power amplifier module is based on ANADIGICS proprietary ProEficientTM technology. The PA is designed to operate up to 17 dBm in the low power mode, thus eliminating the need for three gain states, while still maintaining low quiescent current and high efficiency in low and medium power levels. Average weighted efficiency can be increased by using an external switch mode power supply (SMPS) or DC/DC converter to reduce VCC. The directional "daisy chainable" coupler is integrated within the PA module, therefore there is no need for external couplers. C6 GND TX filter Figure 6 shows one application example on mobile board. C1, C2 and C4 are RF bypass caps and should be placed nearby pin 1 and pin 10. RF Bypassing is used to optimize unwanted out of band (OOB) emissions and reduce OOB gain. Optional jumper for non-APT application VBATT RFIN The AWT6651 has an integrated voltage regulator, which eliminates the need for an external constant voltage source. The PA is turn on/off is controlled by VEN pin. A single VMODE control logic (VMODE1) is needed to operate this device. AWT6651 requires only two calibration sweeps for system calibration, thus saving calibration time. C1 SMPS C2 GND at slug GND Input Matching C5 VBATT VCC RFIN RFOUT VMODE2 CPLIN VMODE1 GND VEN GND 50 CPLOUT To Detector GND PA_R0 PA_0N C4 GND Figure 6: Typical Application Circuit 12 DATA SHEET - Rev 2.3 07/2014 GND RFOUT GND BB C3 Output Matching Duplexer AWT6651 PACKAGE OUTLINE Figure 7: Package Outline - 10 Pin 3 mm x 3 mm x 0.9 mm Surface Mount Module Pin 1 Identifier Date Code YY=Year; WW=Work week 6651 Part Number LLLLNN YYWWCC Lot Number Country Code (CC) Figure 8: Branding Specification 13 DATA SHEET - Rev 2.3 07/2014 AWT6651 PCB AND STENCIL DESIGN GUIDELINE Figure 9: Recommended PCB Layout Information 14 DATA SHEET - Rev 2.3 07/2014 AWT6651 COMPONENT PACKAGING Pin 1 Figure 10: Carrier Tape Figure 11: Reel 15 DATA SHEET - Rev 2.3 07/2014 AWT6651 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWT6651Q7 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 0.9 mm Surface Mount Module Tape and Reel, 2500 pieces per Reel AWT6651P9 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 0.9 mm Partial Tape and Reel Surface Mount Module ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 16 DATA SHEET - Rev 2.3 07/2014