SiUD403ED
www.vishay.com Vishay Siliconix
S20-0847-Rev. C, 26-Oct-2020 1Document Number: 70731
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• Ultra small 0.8 mm x 0.6 mm outline
• Ultra thin 0.4 mm max. height
• Typical ESD protection 1500 V (HBM)
• -1.5 V rated RDS(on)
• 100% Rg tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•Load switch
• High speed switching
• Power management in
battery-operated, mobile
and wearable devices
Note
• The lead finish is NiPdAu and classed as E4 finish
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s
c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering
d. Maximum under steady state conditions is 135 °C/W
e. Maximum under steady state conditions is 400 °C/W
f. Package limited
PRODUCT SUMMARY
VDS (V) -20
RDS(on) max. () at VGS = -4.5 V 1.25
RDS(on) max. () at VGS = -2.5 V 1.7
RDS(on) max. () at VGS = -1.8 V 2.7
RDS(on) max. () at VGS = -1.5 V 4.4
Qg typ. (nC) 0.64
ID (A) -0.5 a, f
Configuration Single
PowerPAK
®
0806 Single
Top View Bottom View
1
G
2
S
D
3
1
0.8 mm
0.6 mm
1
6mm
0.8 mm
0.4 mm
P-Channel MOSFET
D
S
G
ORDERING INFORMATION
Package PowerPAK 0806
Lead (Pb)-free and halogen-free SiUD403ED-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -20 V
Gate-source voltage VGS ± 8
Continuous drain current (TJ = 150 °C)
TA = 25 °C
ID
-0.5 a, f
A
TA = 70 °C -0.5 a, f
TA =25 °C -0.4 b
TA = 70 °C -0.32 b
Pulsed drain current (t = 100 μs) IDM -0.8
Continuous source-drain diode current TA = 25 °C IS
-0.5 a, f
TA = 70 °C -0.37 b
Maximum power dissipation
TA = 25 °C
PD
1.25 a
W
TA = 70 °C 0.8 a
TA = 25 °C 0.37 b
TA = 70 °C 0.24 b
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) c260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient a, d
t 5 s RthJA
80 100 °C/W
Maximum junction-to-ambient b, e 265 335
SiUD403ED
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S20-0847-Rev. C, 26-Oct-2020 2Document Number: 70731
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -20 - - V
VDS temperature coefficient VDS/TJID = -250 μA - -12.4 - mV/°C
VGS(th) temperature coefficient VGS(th)/TJ-1.6-
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -0.4 - -0.9 V
Gate-source leakage IGSS
VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 μA
VDS = 0 V, VGS = ± 8 V - - ± 7
Zero gate voltage drain current IDSS
VDS = -20 V, VGS = 0 V - - -1 μA
VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10
On-state drain current aID(on) VDS -5 V, VGS = 0 V -0.5 - - A
Drain-source on-state resistance aRDS(on)
VGS = -4.5 V, ID = -0.3 A - 1.01 1.25
VGS = -2.5 V, ID = -0.1 A - 1.4 1.7
VGS = -1.8 V, ID = -0.1 A - 2.1 2.7
VGS = -1.5 V, ID = -0.05 A - 2.8 4.4
Forward transconductance agfs VDS = -10 V, ID = -0.3 A - 0.6 - S
Dynamic b
Input capacitance Ciss
VDS = -10 V, VGS = 0 V, f = 1 MHz
-31-
pFOutput capacitance Coss -8.1-
Reverse transfer capacitance Crss -7-
Total gate charge Qg
VDS = -10 V, VGS = -8 V, ID = -0.3 A - 1.1 1.7
nC
VDS = -10 V, VGS = -4.5 V, ID = -0.3 A - 0.64 1
Gate-source charge Qgs VDS = -10 V, VGS = -4.5 V, ID = -0.3 A -0.13-
Gate-drain charge Qgd -0.1-
Gate resistance Rgf = xx MHz 15 74 150
Turn-on delay time td(on)
VDD = -10 V, RL = 33.3 , ID -0.3 A,
VGEN = -4.5 V, Rg = 1
-715
ns
Rise time tr-2140
Turn-off delay time td(off) -1120
Fall time tf-1120
Turn-on delay time td(on)
VDD = -10 V, RL = 33.3 , ID -0.3 A,
VGEN = -8 V, Rg = 1
-25
Rise time tr-1840
Turn-off delay time td(off) -1020
Fall time tf-1020
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTA = 25 °C - - -0.5 c
A
Pulse diode forward current ISM ---0.8
Body diode voltage VSD IS = -0.3 A, VGS = 0 V - -0.9 -1.2 V
Body diode reverse recovery time trr
IF = -0.3 A, di/dt = 100 A/μs,
TJ = 25 °C
-1530ns
Body diode reverse recovery charge Qrr - 7.5 15 nC
Reverse recovery fall time ta- 10.5 - ns
Reverse recovery rise time tb-4.5-
SiUD403ED
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S20-0847-Rev. C, 26-Oct-2020 3Document Number: 70731
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
10
100
1000
10000
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
02468101214
Axis Title
1st line
2nd line
2nd line
IGSS - Gate Current (mA)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
10
100
1000
10000
0
0.3
0.6
0.9
1.2
1.5
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 5 V thru 3.5 V
VGS = 1.5 V
VGS = 2 V
VGS = 2.5 V
VGS = 3 V
10
100
1000
10000
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
Axis Title
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 1.8 V
VGS = 4.5 V
VGS = 2.5 V
VGS = 1.5 V
10
100
1000
10000
10-9
10-8
10-7
10-6
10-5
10-4
10-3
02468101214
Axis Title
1st line
2nd line
2nd line
IGSS - Gate Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1
00.511.522.53
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
10
20
30
40
50
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
SiUD403ED
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S20-0847-Rev. C, 26-Oct-2020 4Document Number: 70731
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
100
1000
10000
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
VDS = 10 V
VDS = 16 V
VDS = 5 V
ID= 0.3 A
10
100
1000
10000
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
0.4
0.5
0.6
0.7
0.8
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
VGS(th) (V)
TJ- Temperature (°C)
2nd line
ID= 250 µA
10
100
1000
10000
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
Axis Title
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 0.3 A VGS = 4.5 V
VGS = 1.2 V
VGS = 1.5 V
VGS = 1.8 V
10
100
1000
10000
0
0.5
1
1.5
2
2.5
3
012345
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 125 °C
ID= 0.3 A
0.0
1.0
2.0
3.0
4.0
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
SiUD403ED
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S20-0847-Rev. C, 26-Oct-2020 5Document Number: 70731
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0.0
0.2
0.4
0.6
0.8
0255075100125150
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TA- Ambient Temperature (°C)
2nd line
Package limited
0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150
Power (W)
TA - Ambient Temperature (°C)
10
100
1000
10000
0.01
0.1
1
0.1 1 10 100
Axis Title
Axis Title
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Limited by RDS(on) (1)
TA= 25 °C
Single pulse
10 s, 1 s, 100 ms
10 ms
1 ms
100 µs
DC
Id(on) limited
IDM limited
BVDSS limited
SiUD403ED
www.vishay.com Vishay Siliconix
S20-0847-Rev. C, 26-Oct-2020 6Document Number: 70731
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70731.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA = 400 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Package Information
www.vishay.com Vishay Siliconix
Revision: 23-Dec-13 1Document Number: 64254
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Case Outline for PowerPAK 0.8 mm x 0.6 mm
D
E
Top View
Pin 1 Indication
A1
A
Bottom View
LD1
K
E1
b
e
1
23
C
Side View
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A0.350 0.380 0.400 0.0138 0.0150 0.0157
A1 0 - 0.020 0 - 0.0008
b0.120 0.150 0.180 0.0047 0.0059 0.0071
C0.119 0.127 0.135 0.0047 0.0050 0.0053
D0.750 0.800 0.850 0.0295 0.0315 0.0335
D1 0.200 0.250 0.300 0.0078 0.0098 0.0118
E0.550 0.600 0.650 0.0217 0.0236 0.0256
E1 0.450 0.500 0.550 0.0177 0.0197 0.0217
e0.300 0.350 0.400 0.0118 0.0138 0.0158
K0.150 0.250 0.350 0.0058 0.0098 0.0138
L0.200 0.250 0.300 0.0078 0.0098 0.0118
ECN: C13-1574-Rev. A, 23-Dec-13
DWG: 6020
PAD Patter n
www.vishay.com Vishay Siliconix
Revision: 25-Oct-2018 1Document Number: 78035
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Recommended Land Pattern PowerPAK® 0806
1
2
3
1
2
3
0.3 0.8 0.3
0.55 0.62
0.23
0.35
0.13 0.13
0.54
0.03 0.03
0.6
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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