2SK3726-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol Ratings V DS 450 3 ID ID(puls] 12 VGS 30 IAR *2 3 EAS *1 92.8 dVDS/dt *4 20 dV/dt *3 5 PD Ta=25C 2.16 Tc=25C 17 Tch +150 -55 to +150 Tstg VISO *6 2000 Unit V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C Vrms *1 L=18.9mH, Vcc=45V, Tch=25C See to Avalanche Energy Graph *2 Tch < =150C < *3 IF< = BVDSS, Tch < = 150C *4 VDS = 450V *6 f=60Hz, t=60sec. = -ID, -di/dt=50A/s, Vcc < Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=450V VGS=0V Tch=25C Tch=125C VDS=360V VGS=0V VGS=30V VDS=0V ID=1.5A VGS=10V ID=1.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=1.5A VGS=10V RGS=10 V CC=225V ID=3A VGS=10V L=18.9mH Tch=25C IF=3A VGS=0V Tch=25C IF=3A VGS=0V -di/dt=100A/s Tch=25C Min. Typ. 450 3.0 1.92 1.25 2.5 235 42 2 16 4 23 6 10.5 5.5 1.0 3 1.00 0.28 1.4 Max. 5.0 25 250 100 2.50 355 65 3 24 6 35 9 16 8.3 1.5 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 7.35 58.0 Units C/W C/W 1 2SK3726-01MR FUJI POWER MOSFET Characteristics 20 Allowable Power Dissipation PD=f(Tc) 8 18 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 7 16 20V 10V 8V 7.5V 6 14 5 ID [A] PD [W] 12 10 7.0V 4 8 3 6 VGS=6.5V 2 4 1 2 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 1 10 gfs [S] ID[A] 10 12 14 16 18 20 22 24 VDS [V] Tc [C] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 VGS[V] 4.5 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6.5V 8 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=1.5A,VGS=10V 7 7.0V 7.5V 8V 10V 20V 3.5 6 RDS(on) [ ] RDS(on) [ ] 4.0 10 ID [A] 3.0 5 4 max. 3 2.5 typ. 2 2.0 1 1.5 0 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3726-01MR 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A Typical Gate Charge Characteristics VGS=f(Qg):ID=3A,Tch=25C 14 6.5 6.0 12 Vcc= 90V 5.5 max. 225V 10 4.5 360V 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 2 4 6 Tch [C] 0 10 8 10 12 14 16 Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Ciss IF [A] -1 C [nF] 10 Coss 10 -2 10 -3 1 Crss 10 0 10 1 0.1 0.00 2 10 0.25 0.50 0.75 VDS [V] 10 3 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 250 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V IAS=1.2A tf 200 10 2 td(off) 10 EAS [mJ] t [ns] 150 1 td(on) tr IAS=1.8A 100 IAS=3A 10 0 50 10 -1 10 -1 10 0 10 1 0 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3726-01MR 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=45V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 2 10 1 10 0 10 -1 10 -2 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4