1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage V DS 100
VDSX *5 70
Continuous drain current ID±41
Pulsed drain current ID(puls] ±164
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 41
Maximum Avalanche Energy EAS *1 204.7
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.16
Tc=25°C 53
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3645-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V
ID=15A VGS=10V
ID=15A VDS=25V
VCC=48V ID=15A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 2.359
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=50V
ID=30A
VGS=10V
L=146µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
100
3.0 5.0
25
250
10 100
34 44
918
1110 1665
280 420
22 33
16 24
23 35
31 47
16 24
32 48
13 20
914
41 1.10 1.65
0.1
0.38
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<*4 VDS 100V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V *6 t=60sec f=60Hz
*1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C
=
<
200304
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2
Characteristics
2SK3645-01MR FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
024681012
0
20
40
60
80
100
120 20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V 012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 20406080100120
0.00
0.03
0.06
0.09
0.12
0.15
0.18
7.0V6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
VGS=
6.0V
0 25 50 75 100 125 150
0
10
20
30
40
50
60
Allowable Power Dissi pati on
PD=f(Tc)
PD [W]
Tc [°C]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
IAS=17A
IAS=41A
IAS=25A
EAS [mJ]
starting Tch [ °C]
Maximum Avalanche Energy vs. starting Tch
EAS=f(st arting Tch):Vc c =48V
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3
2SK3645-01MR FUJI POWER MOSFET
VGS=f(Qg):ID=30A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0
20
40
60
80
100
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
0 1020304050
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 50V
10-1 100101102
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
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4
2SK3645-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-1
100
101
102
103
Single Pulse
Maximum Avalanche Current vs Pulse width
IAV=f(tAV):st art ing Tc h= 25°C,Vcc=48V
Avalanche Curre nt I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum T ransient Therm al Impedance
Zth(ch-c)=f(t):D=0
Zth (ch-c) [°C/W]
t [sec]
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