1. General description
The HEF4040B is a 12-stage binary rippl e counter with a clock input (CP), an overriding
asynchronous master reset input (MR) and twelve fully buffered outputs (Q0 to Q11). The
counter advances on the HIGH-to-LOW transitio n of CP. A HIGH on MR clears all counter
stages and forces all outputs LOW, independent of CP. Each counter stage i s a static
toggle flip-flop. The clock input is highly tolerant of slow rise and fall times due to its
Schmitt trigger action.
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS
(usually ground). Unused inputs must be connected to VDD, VSS, or another input. It is
also suitable for use over the full industrial (40 °C to +85 °C) temperature range.
2. Features
Tolerant of slow clock rise and fall time
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Operates across the full industrial temperature range 40 °C to +85 °C
Complies with JEDEC standard JESD 13-B
3. Applications
Frequency dividing circuits
Time delay circuits
Control counters
4. Ordering information
HEF4040B
12-stage binary ripple counter
Rev. 06 — 25 November 2009 Product data sheet
Table 1. Ordering information
All types operate from
40
°
C to +85
°
C.
Type number Package
Name Description Version
HEF4040BP DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4
HEF4040BT SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 2 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
5. Functional diagram
Fig 1. Functional di agram
Fig 2. Logic diag ram
001aad58
9
12-STAGE COUNTER
9
Q0
7
Q1
6
Q2
5
Q3
3
Q4
2
Q5
4
Q6
13
Q7
12
Q8
14
Q9
15
Q10
1
Q11
10
11
T
C
D
MR
CP
001aae61
5
MR
CP
FF 1
Q0
T
Q
Q
CD
FF 2
T
Q
Q
CD
FF 12
T
Q
Q
CD
Q1 Q11
Fig 3. Timing diagram
001aad587
1 2 4 8 16 32 64 128 256 512 1024 2048 4096
CP input
MR input
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
Q10
Q11
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 3 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
6. Pinning information
6.1 Pinning
6.2 Pin description
Fig 4. Pin configuratio n
HEF4040B
Q11 VDD
Q5 Q10
Q4 Q9
Q6 Q7
Q3 Q8
Q2 MR
Q1 CP
VSS Q0
001aae614
1
2
3
4
5
6
7
8
10
9
12
11
14
13
16
15
Table 2. Pin description
Symbol Pin Description
VSS 8 ground supply voltage
Q0 to Q11 9, 7, 6, 5, 3, 2, 4, 13, 12, 14, 15, 1 parallel output
CP 10 clock input (HIGH-to-LOW edge -triggered)
MR 11 master reset input (active HIGH)
VDD 16 supply voltage
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 4 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
7. Limiting values
[1] For DIP16 package: Ptot derates linearly with 12 mW/K above 70 °C.
[2] For SO16 package: Ptot derates linearly with 8 mW/K above 70 °C.
8. Recommended operating conditions
9. Static characteristics
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDD supply voltage 0.5 +18 V
IIK input clamping current VI<0.5 V or VI>V
DD + 0.5 V - ±10 mA
VIinput voltage 0.5 VDD + 0.5 V
IOK output clamping current VO<0.5 V or VO>V
DD + 0.5 V - ±10 mA
II/O input/output current - ±10 mA
IDD supply current - 50 mA
Tstg storage temperature 65 +150 °C
Tamb ambient temperature 40 +85 °C
Ptot total power dissipation DIP16 package [1] - 750 mW
SO16 package [2] - 500 mW
P power dissipation per output - 100 mW
Table 4. Recommended operating con ditions
Symbol Parameter Conditions Min Typ Max Unit
VDD supply voltage 3 - 15 V
VIinput voltage 0 - VDD V
Tamb ambient temperature in free air 40 - +85 °C
Δt/ΔV input transition rise and fall rate VDD = 5 V - - 3.75 μs/V
VDD = 10 V - - 0.5 μs/V
VDD = 15 V - - 0.08 μs/V
Table 5. Static characteristics
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter Conditions VDD Tamb = 40 °C Tamb = 25 °C Tamb = 85 °CUnit
Min Max Min Max Min Max
VIH HIGH-level input voltage |IO| < 1 μA 5 V 3.5 - 3.5 - 3.5 - V
10 V 7.0 - 7.0 - 7.0 - V
15 V 11.0 - 11.0 - 11.0 - V
VIL LOW-level input voltage |IO| < 1 μA 5 V - 1.5 - 1.5 - 1.5 V
10 V - 3.0 - 3.0 - 3.0 V
15 V - 4.0 - 4.0 - 4.0 V
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 5 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
10. Dynamic characteristics
VOH HIGH-level output voltage |IO| < 1 μA 5 V 4.95 - 4.95 - 4.95 - V
10 V 9.95 - 9.95 - 9.95 - V
15 V 14.95 - 14.95 - 14.95 - V
VOL LOW-level output voltage |IO| < 1 μA 5 V - 0.05 - 0.05 - 0.05 V
10 V - 0.05 - 0.05 - 0.05 V
15 V - 0.05 - 0.05 - 0.05 V
IOH HIGH-level output current VO = 2.5 V 5 V 1.7 - 1.4 - 1.1 - mA
VO = 4.6 V 5 V 0.52 - 0.44 - 0.36 - mA
VO = 9.5 V 10 V 1.3 - 1.1 - 0.9 - mA
VO = 13.5 V 15 V 3.6 - 3.0 - 2.4 - mA
IOL LOW-level output current VO = 0.4 V 5 V 0.52 - 0.44 - 0.36 - mA
VO = 0.5 V 10 V 1.3 - 1 .1 - 0.9 - mA
VO = 1.5 V 15 V 3.6 - 3 .0 - 2.4 - mA
ILI input leakage current 15 V - ±0.3 - ±0.3 - ±1.0 μA
IDD supply current IO = 0 A 5 V - 20 - 20 - 150 μA
10 V - 40 - 40 - 300 μA
15 V - 80 - 80 - 600 μA
CIinput capacitance - - - - 7.5 - - pF
Table 5. Static characteristics …continued
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter Conditions VDD Tamb = 40 °C Tamb = 25 °C Tamb = 85 °CUnit
Min Max Min Max Min Max
Table 6. Dynamic characteristics
VSS = 0 V; Tamb = 25
°
C; unless otherwise specified; for test circuit see Figure 6.
Symbol Parameter Conditions VDD Extrapolation formula [1] Min Typ Max Unit
tPHL HIGH to LOW
propagation delay CP Q0
see Figure 5 5 V 78 ns + (0.55 ns/pF)CL- 105 210 ns
10 V 34 ns + (0.23 ns/ pF ) C L-4590ns
15 V 27 ns + (0.16 ns/ pF ) C L-3570ns
Qn Qn + 1 5 V [2] (0.55 ns/pF)CL-3570ns
10 V [2] (0.23 ns/pF)CL-1530ns
15 V [2] (0.16 ns/pF)CL -1020ns
MR Qn
see Figure 5 5 V 63 ns + (0.55 ns/pF)CL- 90 180 ns
10 V 29 ns + (0.23 ns/ pF ) C L-4080ns
15 V 22 ns + (0.16 ns/ pF ) C L-3060ns
tPLH LOW to HIGH
propagation delay CP Q0
see Figure 5 5 V 58 ns + (0.55 ns/pF)CL- 85 170 ns
10 V 29 ns + (0.23 ns/ pF ) C L-4080ns
15 V 22 ns + (0.16 ns/ pF ) C L-3060ns
Qn Qn + 1 5 V [2] (0.55 ns/pF)CL-3570ns
10 V [2] (0.23 ns/pF)CL-1530ns
15 V [2] (0.16 ns/pF)CL-1020ns
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 6 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
[1] The typical values of the propagation delay and transition times are calcula t ed from the extrapolation formulas shown (CL in pF)
[2] For loads other than 50 pF at the nth output, use the slope given.
[3] tt is the same as tTHL and tTLH.
tttransition time see Figure 5 5 V [3] 10 ns + (1.00 ns/pF)C L- 60 120 ns
10 V 9 ns + (0.42 ns/pF )C L-3060ns
15 V 6 ns + (0.28 ns/pF )C L-2040ns
tWpulse width CP input HIGH;
minimum width;
see Figure 5
5 V 50 25 - ns
10 V 30 15 - ns
15 V 20 10 - ns
MR input HIGH;
minimum width;
see Figure 5
5 V 40 20 - ns
10 V 30 15 - ns
15 V 20 10 - ns
trec recovery time MR input;
see Figure 5 5 V 40 20 - ns
10 V 30 15 - ns
15 V 20 10 - ns
fmax maximum
frequency CP input;
see Figure 5 5 V 10 20 - MHz
10 V 15 30 - MHz
15 V 25 50 - MHz
Table 6. Dynamic characteristics …continued
VSS = 0 V; Tamb = 25
°
C; unless otherwise specified; for test circuit see Figure 6.
Symbol Parameter Conditions VDD Extrapolation formula [1] Min Typ Max Unit
Table 7. Dynamic power dissipation PD
PD can be calculated from the formulas shown. VSS = 0 V; tr = tf
20 ns; Tamb = 25
°
C.
Symbol Parameter VDD Typical formula for PD (μW) where:
PDdynamic power
dissipation 5 V PD = 400 × fi + Σ(fo × CL) × VDD2fi = input frequency in MHz,
fo = output frequency in MHz,
CL = output load capacitance in pF,
VDD = supply voltage in V,
Σ(fo × CL) = sum of the outputs.
10 V PD = 200 0 × fi + Σ(fo × CL) × VDD2
15 V PD = 520 0 × fi + Σ(fo × CL) × VDD2
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 7 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
11. Waveforms
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Transition times: transition time (tt) = HIGH LOW (tTHL) or LOW HIGH (tTLH) transition times.
Measurement points are given in Table 8, test circuit in Figure 6 and test data in Table 9
Fig 5. W a v ef orms showing propagation delays for MR to Qn and CP to Q0, minimum MR and CP pulse widths
MR input
Qn + 1 output
CP input
VSS
Q0 or Qn
output
tW
tPHL
1/fmax
trec
VM
VM
VI
VI
VM
001aaj76
3
tPLH
tW
tTLH tTHL
tPLH tPHL
tPHL
VM
VSS
VOH
VOL
VOH
VOL
Table 8. Measurement points
Supply voltage Input Output
VDD VIVMVM
5 V to 15 V VDD or VSS 0.5VDD 0.5VDD
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 8 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
a. Input waveforms
b. Test circuit
Test data is given in Table 9.
Definitions test circuit:
DUT = Device Under Test;
CL = load capacitance, including the jig and probe capacitance;
RL = load resistance, which should be equal to the output impedance of the pulse generator.
Fig 6. Test circuit for measuring switching times
V
M
V
M
t
W
t
W
10 %
90 %
0 V
V
I
V
I
negative
pulse
positive
pulse
0 V
V
M
V
M
90 %
10 %
t
f
t
r
t
r
t
f
001aaj78
1
VDD
VIVO
001aag18
2
DUT
CL
RT
G
Table 9. Test data
Supply voltage Input Load
VDD VItr, tfCL
5 V to 15 V VSS or VDD 20 ns 50 pF
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 9 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
12. Package outline
Fig 7. Package outline SOT38-4 (DIP16)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT38-4 95-01-14
03-02-13
MH
c
(e )
1
ME
A
L
seating plane
A1
wM
b1
b2
e
D
A2
Z
16
1
9
8
E
pin 1 index
b
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
UNIT A
max. 12 b1(1) (1) (1)
b2cD E e M Z
H
L
mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
min. A
max. bmax.
w
ME
e1
1.73
1.30
0.53
0.38
0.36
0.23
19.50
18.55
6.48
6.20
3.60
3.05 0.2542.54 7.62 8.25
7.80
10.0
8.3 0.764.2 0.51 3.2
inches 0.068
0.051
0.021
0.015
0.014
0.009
1.25
0.85
0.049
0.033
0.77
0.73
0.26
0.24
0.14
0.12 0.010.1 0.3 0.32
0.31
0.39
0.33 0.030.17 0.02 0.13
D
IP16: plastic dual in-line package; 16 leads (300 mil) SOT38
-4
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 10 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
Fig 8. Package outline SOT109-1 (SO16)
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
8
9
1
16
y
pin 1 index
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10
1.45
1.25 0.25 0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8 1.27 6.2
5.8
0.7
0.6
0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.0
0.4
SOT109-1 99-12-27
03-02-19
076E07 MS-012
0.069 0.010
0.004
0.057
0.049 0.01 0.019
0.014
0.0100
0.0075
0.39
0.38
0.16
0.15 0.05
1.05
0.041
0.244
0.228
0.028
0.020
0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
0 2.5 5 mm
scale
S
O16: plastic small outline package; 16 leads; body width 3.9 mm SOT109
-1
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 11 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
13. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
HEF4040B_6 20091125 Product data sheet - HEF4040B_5
Modifications: Section 2 “Features, Δt/ΔV values updated.
HEF4040B_5 20090709 Product data sheet - HEF4040B_4
HEF4040B_4 20090304 Product data sheet - HEF4040B_CNV_3
HEF4040B_CNV_3 19950101 Product specification - HEF4040B_CNV_2
HEF4040B_CNV_2 19950101 Product specification - -
HEF4040B_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 25 November 2009 12 of 13
NXP Semiconductors HEF4040B
12-stage binary ripple counter
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre va il.
14.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors does no t give any represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause pe rmanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
14.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specif ication for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors HEF4040B
12-stage binary ripple counter
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of rele ase: 25 Novemb er 2009
Document identifier: HEF4040B_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 1
5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Recommended operating conditions. . . . . . . . 4
9 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
10 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
15 Contact information. . . . . . . . . . . . . . . . . . . . . 12
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13