All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9 Rev. 02, 2005-11-01
DAB Mode 2 Drive-up at 28 V
VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz
-42
-38
-34
-30
-26
-22
34 35 36 37 38 39 40 41 42
Output Power, avg. (dBm)
10
14
18
22
26
30
Drain Efficiency (%)
Drain Efficiency
Regrowth
Spectral Regrowth (dBc) .
PTF140451E
PTF140451F
Description
The PTF140451E and PTF140451F are 45-watt, GOLDMOS®
FETs intended for DAB applications. These devices are
characterized for Digital Audio Broadcast operation in the 1450 to
1550 MHz band. Thermally-enhanced packages provide the
coolest operation available. Full gold metallization ensures
excellent device lifetime and reliability.
PTF140451E
Package 30265
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 1450 – 1550 MHz
RF Characteristics
DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 12.5 WAVG, ƒ = 1500 MHz, DAB Mode 2, ∆ 975 kHz ƒC
Characteristic Symbol Min Typ Max Unit
Spectral Regrowth RGTH —–30 —dBc
Gain Gps —18 —dB
Drain Efficiency ηD—27.5 —%
PTF140451F
Package 31265
Features
•Thermally-enhanced packages
•Broadband internal matching
•Typical DAB Mode 2 performance at 1500 MHz, 28 V
- Average output power = 12.5 W
- Efficiency = 27.5%
- Spectral regrowth = –30 dBc
- ∆ 975 kHz ƒC
•Typical DAB Mode 2 performance at 1500 MHz, 32 V
- Average output power = 15.5 W
- Efficiency = 27%
- Spectral regrowth = –30 dBc
- ∆ 975 kHz ƒC
•Typical CW performance, 1500 MHz, 28 V
- Output power = 60 W
- Linear gain = 18 dB
- Efficiency = 54% at P–1dB
•Integrated ESD protection: Human Body Model,
Class 1 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR at 28 V, 45 W (CW)
output power
•Pb-free and RoHS compliant
*See Infineon distributor for future availability.
PTF140451E
PTF140451F
Data Sheet 2 of 9 Rev. 02, 2005-11-01
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 45 WPEP, ƒ = 1500 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 17 18 —dB
Drain Efficiency ηD35 36.5 —%
Intermodulation Distortion IMD —–32 –30 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.02 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS 2.5 3.3 4.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD175 W
Above 25°C derate by 1.0 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C) RθJC 1.0 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTF140451E 30265 Thermally-enhanced slotted flange, single-ended PTF140451E
PTF140451F 31265 Thermally-enhanced earless flange, single-ended PTF140451F
*See Infineon distributor for future availability.
PTF140451E
PTF140451F
Data Sheet 3 of 9 Rev. 02, 2005-11-01
CW Power Sweep (P–1dB)
VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz
15
16
17
18
19
20
0 10 20 30 40 50 60
Output Power (W)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Drain Efficiency
TCASE = 25°C
TCASE = 90°C
Gain
CW Sweep in a Broadband Test Fixture
VDD = 28 V, IDQ = 550 mA, POUT (CW) = 12 W
10
15
20
25
30
35
40
45
1400 1450 1500 1550 1600
Frequency (MHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
Input Return Loss (dB)
Gain
Drain Efficiency
Return Loss
Gain (dB) and Drain Efficiency (%) .
3rd Order Intermodulation Distortion
vs. Output Power for Various IDQ
VDD = 28, ƒ = 1500 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
32 34 36 38 40 42 44 46 48
Output Power, PEP (dBm)
IM3 (dBc)
IDQ = 450 mA
IDQ = 500 mA
IDQ = 650 mA
IDQ = 550 mA
IDQ = 600 mA
2-Tone Drive-up at Optimum Current
VDD = 28 V, IDQ = 550 mA, ƒ = 1500 MHz,
tone spacing = 1 MHz
-65
-55
-45
-35
-25
32 36 40 44 48
Output Power, PEP (dBm)
IMD (dBc)
5
15
25
35
45
Drain Efficiency (%)
3rd Order
7th
5th
Drain Efficiency
Typical Performance
PTF140451E
PTF140451F
Data Sheet 4 of 9 Rev. 02, 2005-11-01
DAB Mode 2 Drive-up at 32 V
IDQ = 550 mA, ƒ = 1500 MHz
-42
-38
-34
-30
-26
-22
35 36 37 38 39 40 41 42 43
Output Power, avg. (dBm)
10
14
18
22
26
30
Drain Efficiency (%)
Drain Efficiency
Regrowth
Spectral Regrowth (dBc) .
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (ºC)
Normalized Bias Voltage
0.30 A
1.10 A
2.00 A
2.85 A
3.75 A
4.50 A
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1400 9.1 –2.65 4.20 –3.70
1450 9.1 –1.81 4.10 –3.50
1500 9.3 –0.98 4.10 –2.90
1550 9.5 0.15 4.00 –2.70
1600 9.9 0.60 4.00 –2.20
0.1
0.3
0.2
0.1
0.1
0
.2
<
-
-
-
W
A
V
L
E
N
0
.0
1600 MHz
1400 MHz
1600 MHz
1400 MHz
Z Load
Z Source
Z0 = 50 Ω
Typical Performance (cont.)
PTF140451E
PTF140451F
Data Sheet 5 of 9 Rev. 02, 2005-11-01
Reference Circuit
Reference circuit schematic for 1500 MHz
Circuit Assembly Information
DUT PTF140451E or PTF140451F LDMOS Transistor
PCB 0.76 mm [0.030"] thick, εr = 4.5 TMM4 2 oz. copper, both sides
Microstrip Electrical Characteristics at 1500 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.035 λ, 50.0 Ω3.81 x 1.47 0.150 x 0.058
l20.043 λ, 41.0 Ω4.60 x 1.93 0.181 x 0.076
l30.064 λ, 41.0 Ω6.91 x 1.93 0.272 x 0.076
l40.010 λ, 41.0 Ω1.04 x 1.93 0.041 x 0.076
l50.012 λ, 14.7 Ω1.19 x 7.62 0.047 x 0.300
l60.050 λ, 8.0 Ω4.90 x 15.24 0.193 x 0.600
l70.150 λ, 60.0 Ω16.69 x 0.97 0.657 x 0.038
l80.246 λ, 54.0 Ω26.85 x 1.24 1.057 x 0.049
l90.087 λ, 9.0 Ω8.48 x 13.46 0.334 x 0.530
l10 0.045 λ, 17.0 Ω4.57 x 6.25 0.180 x 0.246
l11 0.083 λ, 50.0 Ω9.02 x 1.52 0.355 x 0.060
l12 0.0113 λ, 50.0 Ω1.22 x 1.52 0.048 x 0.060
1Electrical Characteristics are rounded.
14 0451ef_sch_9-28-05
RF_IN RF_OUT
R3
2K VR4
2K V
R2
1.3K V
LM7805
QQ1
R5
10 V
33pF
2.1pF
l1
l8
10V
R8
DUT
C9
l7
.1µF
C5
R6
10µF
35V
C4 R7 .01µF
C6 33pF
C7
C8
l2l3l4l5l6
1KV
1KV
l933pF
C17
0.9pF
C18
l10 l11
1.4pF
C16
33pF .02µF 1µF
C10 C11 C12 1µF
C13 C14
.1µF C15
22µF
50V
L1
VDD
C1
0.001µF
VDD
C2
0.001µF
BCP56
Q1
C3
0.001µF
R1
1.2K V
l12
PTF140451E
PTF140451F
Data Sheet 6 of 9 Rev. 02, 2005-11-01
140451out_01140451in_01
22
HHD
4V6
140451ef_assy-05-09-16
VDD
VDD
L1
C5
C4
R6 R7
C9
C17
C18
C15
C10
C8
C16
R4 Q1
QQ1
C3
C1
R1 C2
R2
R5
LM
C7
R3
C6
C14
C13 C12C11
R8
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)*
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 366-1655-2-ND
C5, C14 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6 Capacitor, 0.01 µF ATC 200B 103
C7 Capacitor, 33 pF ATC 100A 330
C8, C10, C17 Ceramic capacitor, 33 pF ATC 100B 330
C9 Ceramic capacitor, 2.1 pF ATC 100B 2R1
C11 Capacitor, 0.02 µF ATC 200B 203
C12, C13 Ceramic capacitor, 1.0 µF Digi-Key 445-1411-1-ND
C15 Electrolytic capacitor, 22 µF, 50 V Digi-Key PCE3374CT-ND
C16 Ceramic capacitor, 1.4 pF ATC 100B 1R4
C18 Ceramic capacitor, 0.9 pF ATC 100B 0R9
L1 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor, 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R8 Chip resistor, 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip resistor, 1 k-ohms Digi-Key P1KECT-ND
*Gerber files for this circuit are available on request.
140451ef_dtl
VDD
C5
C4
R6 R7
R4 Q1
QQ1
C3
C1
R1 C2
R2
R5
LM
C7
R3
C6
PTF140451E
PTF140451F
Data Sheet 7 of 9 Rev. 02, 2005-11-01
Package Outline Specifications
Package 30265
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
20.31
[.800]
10.16±0.25
[.400±.010]
2X 2.59±0.38
[.107 ±.015]
FLANGE 9.78
[.385]
2x 7.11
[.280]
7.11
[.280]
15.23
[.600]
4x 1.52
[.060]
C
L
C
L
(45° X 2.03
[.080])
S
D
G
2X R1.60
[.063]
LID 10.16±0.25
[.400±.010]
0.0381 [.0015] -A-
3.48±0.38
[.137±.015]
1.02
[.040]
SPH 1.57
[.062]
15.60±0.51
[.614±.020]
H-30265-2-1-2303
PTF140451E
PTF140451F
Data Sheet 8 of 9 Rev. 02, 2005-11-01
265-cases_31265
(45° X 2.03
[.080])
2X 2.59±0.51
[.102±.020]
S
D
G
LID 10.16±0.25
[.400±.010]
FLANGE 10.16
[.400]
2X 7.11
[.280]
10.16±0.25
[.400±.010]
10.16
[.400]
1.02
[.040]
3.56±.38
[.140±.015]
SPH 1.57
[.062]
0.025 [.001]-A-
10.16
[.400]
15.49±.51
[.610±.020]
R1.27
[R.050] 4X R0.63
[R.025] MAX
Package Outline Specifications (cont.)
Package 31265
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet 9 of 9 Rev. 02, 2005-11-01
PTF140451EF
Confidential – Limited Distribution
Revision History: 2005-11-01 Data Sheet
Previous Version: 2005-09-07, Preliminary Data Sheet
Page Subjects (major changes since last revision)
All Add graphs and circuit information. Remove Preliminary designation.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2005-11-01
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
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