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Revision:B
2 of 5
2016/10/10
Electrical characteristics (Ta=25 unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
Static
VGS=0, ID =250µA N-Ch 30
Drain-source breakdown voltage V(BR)DSS
VGS=0, ID =-250µA P-Ch -30
V
VDS =VGS, ID =250µA N-Ch 1 1.5 3
Gate-threshold voltage VGS(th)
VDS =VGS, ID =-250µA P-Ch -1 -1.7 -3
V
N-Ch
Gate-body leakage IGSS DS
V =0V, VGS =±20V P-Ch ±100 nA
VDS =30V, VGS =0V N-Ch 1
Zero gate voltage drain current IDSS VDS =-30V, VGS =0V P-Ch -1 µA
VGS =10V, ID =6A N-Ch 10 28
VGS =-10V, ID =-6A P-Ch 16 36
VGS =4.5V, ID =4A N-Ch 14 42
Drain-source on-resistancecDS(on)
R
VGS =-4.5V, ID =-4A P-Ch 25 55
m
VDS =10V, ID =6A N-Ch
Forward transconductance gfs VDS =-10V, ID =-6A P-Ch 4 S
IS=1.7A,VGS=0V N-Ch 1.2
Diode forward voltagecSD V
IS=-1.7A,VGS=0V P-Ch -1.2 V
Dynamic
N-Ch 13.5
Total gate chargec Qg P-Ch 20
N-Ch 1.4
Gate-source charged Qgs P-Ch 2
N-Ch 4.7
Gate-drain charged Qgd
N-Channel
VDS =24V,VGS =4.5V,ID =6A
P-Channel
VDS =-24V,VGS =-4.5V,ID =-6A
P-Ch 7
nC
N-Ch 5
Turn-on delay timec td(on)
P-Ch 8
N-Ch 8
Rise timed tr P-Ch 7
N-Ch 18.5
Turn-off delay timed td(off) P-Ch 34
N-Ch 9
Fall timed tf
N-Channel
VDS=20V,RD=20, ID=1A,
VGS=10V,RG=3.3
P-Channel
VDS=-15V,RD=15, ID=-1A,
VGS=-10V,RG=3.3
P-Ch 26
ns
N-Ch 770
Input Capacitanced Ciss P-Ch 1380
N-Ch 80
Output Capacitanced Coss P-Ch 150
N-Ch 75
Reverse Transfer Capacitanced Crss
N-Channel
VDS =25V,VGS =0V,f =1MHz
P-Channel
VDS =-25V,VGS =0V,f =1MHz
P-Ch 140
pF
Notes :
c. Pulse Test : Pulse width300µs, duty cycle 2%.
d. Guaranteed by design, not subject to production testing.
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