1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
VCEO 30 V
Collector to base voltage
VCBO 40 V
Emitter to collector voltage
VECO 5V
Emitter to base voltage
VEBO 5V
Collector current IC50 mA
Collector power dissipation
PC150 mW
Operating ambient temperature
Topr –25 to +85 ˚C
Storage temperature Tstg –30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current ICEO VCE = 10V 5 300 nA
Collector photo current ICE(L) VCE = 10V, L = 100 lx*1 1.5 3.5 mA
Peak sensitivity wave length
λPVCE = 10V 800 nm
Acceptance half angle θ
Measured from the optical axis to the half power point
10 deg.
Response time tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω 3 µs
Collector saturation voltage
VCE(sat) ICE(L) = 1mA, L = 500 lx*1 0.2 0.4 V
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Phototransistors
PNZ102 (PN102)
Silicon NPN Phototransistor
For optical control systems
;;
;;
;
;
50ΩRL
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
VCC
Sig.OUT
Sig.IN (Input pulse)
(Output pulse) 10%
90%
tdtrtf
Glass lens
6.3±0.3
1: Emitter
2: Base
2: Collector
Unit : mm
1.0±0.2
1.0±0.15
ø4.6±0.15
2.54±0.25
ø5.75 max.
3-ø0.45±0.05
12.7 min.
45±3˚
1
2
3
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current : ICEO = 5 nA (typ.)
Fast response : tr, tf = 3 µs (typ.)
Base pin for easy circuit design
TO-18 standard type package
Note) The part number in the parenthesis shows conventional part number.
2
Phototransistors PNZ102
PC — Ta
200
160
120
80
40
Ambient temperature Ta (˚C )
Collector power dissipation P
C
(mW)
0 20406080100
0
– 20
ICE(L) — VCE
20
16
12
4
8
0
Collector to emitter voltage VCE (V)
Ta = 25˚C
T = 2856K
Collector photo current I
CE(L)
(mA)
02010 30
IC — VCE
20
16
12
4
8
0
Collector to emitter voltage VCE (V)
Ta = 25˚C
Collector current I
C
(mA)
02010 30
ICE(L) — L
10
2
10
1
Illuminance L (lx)
Collector photo current I
CE(L)
(mA)
10 10
2
10
3
10
–2
10
–1
1
V
CE
= 10V
Ta = 25˚C
T = 2856K
ICEO — Ta
10
3
10
1
10
2
Ambient temperature Ta (˚C )
V
CE
= 10V
Dark current I
CEO
(nA)
10
–1
– 40 0 40 80 120
tr — ICE(L)
10
3
10
2
10
1
Collector photo current ICE(L) (mA)
Rise time t
r
(µs)
11010
2
10
–1
10
–1
V
CC
= 10V
Ta = 25˚C
Directivity characteristics
100
80
60
40
20
030 20 10 0 10 20 30
Angle θ (deg.)
Relative sensitivity S (%)
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength λ (nm)
Relative sensitivity S (%)
400 600 800 1000
0
200
Ta = 25˚C
ICE(L) — Ta
10
2
10
Ambient temperature Ta (˚C )
V
CE
= 10V
T = 2856K
Collector photo current I
CE(L)
(mA)
1
– 40 0 40 80 120
P
C
= 150mW
L = 50 lx
100 lx
150 lx
200 lx
300 lx
400 lx
500 lx
1000 lx
P
C
= 150mW
I
B
= 5µA
10µA
15µA
20µA
25µA
30µA
R
L
= 1kΩ
500Ω
100Ω
L = 500 lx
200 lx
100 lx
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2001 MAR
