BSS84P E6433 - Infineon Technologies

2011-06-01

Rev 2.5 Page 1

BSS 84 P

SIPMOS Small-Signal-Transistor Product Summary

VDS -60 V

RDS(on) 8

W

ID-0.17 A

Feature

·

P-Channel

·

Enhancement mode

·

Logic Level

·

Avalanche rated

·

dv/dt rated

PG-SOT-23

1

2

3

VPS05161

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

YBs

Type Package Tape and Reel

BSS 84 P PG-SOT-23 L6327:3000pcs/r.

Maximum Ratings, at

TA

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

A

=25°C

T

A

=70°C

I

D

-0.17

-0.14

A

Pulsed drain current

T

A

=25°C

I

D puls

-0.68

Avalanche energy, single pulse

I

D

=-0.17 A , V

DD

=-25V, R

GS

=25

W

E

AS

2.6 mJ

Avalanche energy, periodic limited by T

jmax

E

AR

0.036

Reverse diode dv/dt

IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C

dv/dt-6 kV/µs

Gate source voltage V

GS

±20 V

Power dissipation

TA=25°C

P

tot

0.36 W

Operating and storage temperature T

j

,

T

stg

-55... +150 °C

IEC climatic category; DIN IEC 68-1

55/150/56

BSS 84 P PG-SOT-23 L6433:10000pcs/r.

YBs

2011-06-01

Rev 2.5 Page 2

BSS 84 P

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 3) RthJS - - 200 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

-

350

300

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V(BR)DSS -60 - - V

Gate threshold voltage, VGS = VDS

ID=-20µA

VGS(th) -1 -1.5 -2

Zero gate voltage drain current

VDS=-60V, VGS=0, TA=25°C

VDS=-60V, VGS=0, TA=125°C

IDSS

-

-0.1

-10

-1

-100

µA

Gate-source leakage current

VGS=-20V, VDS=0

IGSS - -10 -100 nA

Drain-source on-state resistance

VGS=-4.5V, ID=-0.14A

RDS(on) - 8 12

W

Drain-source on-state resistance

VGS=-10V, ID=-0.17A

RDS(on) - 5.8 8

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2011-06-01

Rev 2.5 Page 3

BSS 84 P

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS

£

2*ID*RDS(on)max ,

ID=-0.14A

0.065 0.13 - S

Input capacitance Ciss VGS=0, VDS=-25V,

f=1MHz

- 15 19 pF

Output capacitance Coss - 6 8

Reverse transfer capacitance Crss - 2 3

Turn-on delay time td(on) VDD=-30V, VGS=-4.5V,

ID=-0.14A, RG=25

W

- 6.7 10 ns

Rise time tr- 16.2 24.3

Turn-off delay time td(off) - 8.6 12.9

Fall time tf- 20.5 30.8

Gate Charge Characteristics

Gate to source charge Qgs VDD=-48V, ID=-0.17A - 0.25 0.37 nC

Gate to drain charge Qgd - 0.3 0.45

Gate charge total QgVDD=-48V, ID=-0.17A,

VGS=0 to -10V

- 1 1.5

Gate plateau voltage V(plateau) VDD=-48V, ID=-0.17A - -3.42 - V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - -0.17 A

Inv. diode direct current, pulsedISM - - -0.68

Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 -1.24 V

Reverse recovery time trr VR=-30V, IF=lS,

diF/dt=100A/µs

- 23 34 ns

Reverse recovery charge Qrr - 10 15 nC

2011-06-01

Rev 2.5 Page 4

BSS 84 P

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

W

0.38 BSS 84 P

P

tot

2 Drain current

ID = f (TA)

parameter: VGS

³

10 V

0 20 40 60 80 100 120 °C 160

TA

0

-0.02

-0.04

-0.06

-0.08

-0.1

-0.12

-0.14

A

-0.18 BSS 84 P

I

D

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

-10 -1 -10 0 -10 1 -10 2

VVDS

-3

-10

-2

-10

-1

-10

0

-10

1

-10

A

BSS 84 P

I

D

R

DS(on)

= V

DS

/ I

D

DC

10 ms

1 ms

tp = 170.0µs

4 Transient thermal impedance

ZthJA = f (tp)

parameter : D = tp/T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4

s

tp

-1

10

0

10

1

10

2

10

3

10

K/W

BSS 84 P

Z

thJA

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

2011-06-01

Rev 2.5 Page 5

BSS 84 P

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C

0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V-5

VDS

0

-0.04

-0.08

-0.12

-0.16

-0.2

-0.24

-0.28

-0.32

A

-0.4 BSS 84 P

I

D

VGS [V]

a

a -2.5

b

b -3.0

c

c -3.5

d

d -4.0

ee -4.5

f

f -5.0

g

g -5.5

h

h -6.0

i

i -6.5

j

j -7.0

k

k -8.0

l

Ptot = 0.36W

l -10.0

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS; Tj = 25 °C

0 -0.04-0.08-0.12-0.16 -0.2 -0.24-0.28-0.32A-0.38

ID

0

2

4

6

8

10

12

14

16

18

20

22

W

26 BSS 84 P

R

DS(on)

VGS [V] =

a

-2.5

b

-3.0

c

-3.5

d

-4.0

e

-4.5

f

-5.0

g

-5.5

h

-6.0

i

-6.5

j

-7.0

k

-8.0

l

-10.0

7 Typ. transfer characteristics

ID= f ( VGS ); |VDS|

³

2 x |ID| x RDS(on)max

parameter: Tj = 25 °C

01234V6

- VGS

0

0.05

0.1

0.15

0.2

0.25

0.3

A

0.4

- ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

0 0.04 0.08 0.12 0.16 A0.22

-ID

0

0.02

0.04

0.06

0.08

0.1

0.12

S

0.16

gfs

2011-06-01

Rev 2.5 Page 6

BSS 84 P

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = -0.17 A, VGS = -10 V

-60 -20 20 60 100 °C 180

TA

0

2

4

6

8

10

12

14

16

18

W

21 BSS 84 P

R

DS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

-60 -20 20 60 100 °C 160

TA

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

V

2.4

- VGS(th)

2%

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz

0 5 10 V20

- VDS

0

10

1

10

2

10

pF

C

Crss

Coss

Ciss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3

VSD

-3

-10

-2

-10

-1

-10

0

-10

A

BSS 84 P

I

F

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2011-06-01

Rev 2.5 Page 7

BSS 84 P

13 Typ. avalanche energy

EAS = f (TA), parameter:

ID = -0.17 A , VDD = -25 V, RGS = 25

W

25 45 65 85 105 125 °C 165

TA

0

0.5

1

1.5

2

mJ

3

EAS

14 Typ. gate charge

VGS = f (QGate)

parameter: ID = -0.17 A pulsed; Tj = 25 °C

0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5

QGate

0

-2

-4

-6

-8

-10

-12

V

-16 BSS 84 P

V

GS

0,8 VDS max

DS max

V

0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (TA)

-60 -20 20 60 100 °C 180

TA

-54

-56

-58

-60

-62

-64

-66

-68

V

-72 BSS 84 P

V

(BR)DSS

2011-06-01

Rev 2.5 Page 8

BSS 84 P

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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regarding circuits, descriptions and charts stated herein.

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