SS12 – S100 1 of 4 © 2006 Won-Top Electronics
Pb
SS12 – S100
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly B
! Low Power Loss, High Eff icienc y
! Surge Overload Rating to 30A Peak D
! For Use in Low Voltage Application A
! Guard Ring Die Construction F
! Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100 Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR20 30 40 50 60 80 90 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 64 71 V
Average Rectified Output Current @TL = 75°C IO1.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 30 A
Forward Voltage @IF = 1.0A VFM 0.50 0.70 0.85 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocki ng Voltage @TA = 100°C IRM 0.5
20 mA
Typical Thermal Resistance (Not e 1) RJL
RJA 28
88 °C/W
Operating Temperature Range Tj-65 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.
WTE
POWER SEMICONDUCTORS
SMA/DO-214AC
Dim Min Max
A2.50 2.90
B4.00 4.60
C1.20 1.60
D0.152 0.305
E4.80 5.28
F2.00 2.44
G0.051 0.203
H0.76 1.52
All Dimensions in mm